以反应磁控溅射方法沉积ZnO薄膜,然后在空气和H2S气氛中退火制备了六方相ZnS薄膜.用X射线衍射仪(XRD)、紫外-可见透射光谱和扫描电子显微镜(SEM)对薄膜进行表征.提高空气退火温度能够改善ZnS薄膜结晶性,而空气退火温度超过500℃则会降低ZnS薄膜结晶性.另外,当硫化退火温度低于400℃时,ZnO只能部分转变为ZnS,只有硫化温度等于或大于400℃时,ZnO才能全部转变为ZnS.硫化前后薄膜晶粒尺寸有显著变化.所得ZnS薄膜在可见光范围的透过率约为80％,带隙为3.61 ～3.70 eV.
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