采用脉冲激光沉积技术在Si(100)衬底上制备了La3Ga5SiO14薄膜,并研究了不同的退火温度对薄膜结构和表面形貌的影响.衬底温度为室温时生长的薄膜经过800 ℃以上的高温退火后,由最初的无定形态转变为无规则取向的多晶结构.衬底温度为400 ℃时生长的薄膜经过800 ℃退火处理后呈现无序的多晶形态.当退火温度进一步升高至1000 ℃时,XRD图谱显示薄膜由最初的(220)和(300)两个结晶方向转变为以(200)和(400)为主要取向的多晶结构.表面形貌分析表明:衬底温度为400 ℃时,随着退火温度的升高,薄膜颗粒尺寸逐渐增大,表面无裂纹,而衬底温度为室温时生长的薄膜退火后则出现大量的裂缝、孔洞等缺陷.
参考文献
| [1] | Bohm J.;Hengst M.;Roewer R.;Schindler J.;Heimann RB. .Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), and La3Ga5.5Ta0.5O14 (LGT) Part I[J].Journal of Crystal Growth,1999(1/2):128-136. |
| [2] | Bohm J.;Flannery C.;Frohlich HJ.;Hauke T.;Heimann RB. Hengst M.;Straube U.;Chilla E. .Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LCN) and La3Ga5.5Ta0.5O14 (LGT) II. Piezoelectric and elastic properties[J].Journal of Crystal Growth,2000(1/4):293-298. |
| [3] | Jiyang Wang;Xin Yin;Rongjiang Han;Shaojun Zhang;Haikuan Kong;Huaijin Zhang;Xiaobo Hu;Minhua Jiang .Growth, properties and electrooptical applications of single crystal La_3Ga_5SiO_(14)[J].Optical materials,2003(1/2):393-397. |
| [4] | Toshinori Taishi;Takayuki Hayashi;Tatsuo Fukami;Keigo Hoshikawa;Ichiro Yonenaga .Single-crystal growth of langasite (La_3Ga_5SiO_(14)) by the vertical Bridgman (VB) method in air and in an Ar atmosphere[J].Journal of Crystal Growth,2007(1):4-6. |
| [5] | 孙为,黄文奇,周广刚,卢贵武,于迎辉,夏海瑞.CNGS和CTGS新型压电晶体的声表面波特性研究[J].人工晶体学报,2008(03):606-611. |
| [6] | Klemenz C. .High-quality langasite films grown by liquid phase epitaxy[J].Journal of Crystal Growth,2002(Pt.1):714-719. |
| [7] | Zhang H.;Singh NB.;Berghmans A.;Adam JD.;Tidrow S.;Fazi C. .Liquid phase epitaxy growth of langasite film for resonators and oscillators[J].Journal of Crystal Growth,2002(4):660-665. |
| [8] | Hu Y;Wang FW;Lin HL .Photoluminescence of langasite thin films prepared from sol-gel process[J].Materials Chemistry and Physics,2008(1):82-84. |
| [9] | Wang F W .Preparation and Characterization of Lanthanum Gallium Silicate Thin Films[D].Tatung:Tatung University,2007. |
| [10] | Willmott PR.;Huber JR. .Pulsed laser vaporization and deposition[J].Reviews of Modern Physics,2000(1):315-328. |
| [11] | Wang SQ.;Uda S. .Phase relations around langasite (La3Ga5SiO14) in the system La2O3-Ga2O3-SiO2 in air[J].Journal of Crystal Growth,2003(3/4):463-470. |
| [12] | 吴自秦;王兵.薄膜生长[M].北京:科学出版社,2001:208-210. |
| [13] | 张坤学;王丽坤.现代压电学[M].北京:科学出版社,2002:191. |
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