依据文献中的气相反应路径,特别是寄生反应模型和刻蚀反应模型,指出对于存在冷壁面的水平式,加合物的反应路径对沉积起重要作用.在加合物路径中,对薄膜生长起决定作用的是TMGa和TMGa:NH3,而环状化合物[(CH3)2Ga:NH2]3形成的可能性很小,可以忽略.对于垂直式反应器,所有的反应物粒子均经过高温边界层区域,遵循热解路径.在高温条件下,对薄膜生长起决定作用的是MMG.纳米粒子的形成需要高温条件,并且纳米粒子的生长遵循CVD机理,可认为气相纳米粒子的主要成分可能是GaN.在高温条件下H2对GaN的刻蚀作用不可忽视.
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