用离子束增强沉积（ＩＢＥＤ）方法在金属间化合物ＴｉＡｌ上合成厚度为０．５，１，和２μｍ的氮化硅薄膜。所形成的薄膜为非晶态，膜与基底间存在混合的过渡区，膜与基底结合紧密用ＡＥＳ，ＸＲＤ和ＸＰＳ研究薄膜的组成和结构，高温循环氧化结果表明，经沉积膜的ＴｉＡｌ试样的抗氧化性能显著提高其中沉积０．５μｍ薄膜的试样表现出极好的抗循环氧化性能由ＳＥＭ及ＥＤＳ分析得出，良好的高温稳定性能、高的膜／基底结合力和形成富Ａｌ２Ｏ３和硅化物的保护层是提高ＴｉＡｌ抗高温氧化性能的主要因素．
Silicon nitride films were synthesized by ion-beam-enhanced-deposition (IBED) on an IBED system. Auger electron spectroscopy, X-ray diffraction (XRD). X-ray photoemission spectroscopy (XPS) and the scratch test were performed for investigating the composition. structure and the adhesion with the substrate of them. It was found that the silicon nitride film is composed of a thin silicon enriched top layer. a stoichiometric Si3N4 layer and a mixing layer at the film-substrate interface. Cyclic oxidation tests were carried out on the TiAl coated with the silicon nitride films of thicknesses of 0.5. 1 and 2 μm. The results revealed that IBED silicon nitride film is effective to improve the oxidation resistance of TiAl at high temperature. The 0.5 μm silicon nitride film demonstrated an excellent oxidation resistance at 1300 K for at least 30 cycle (600 h). However, this effect decreases as the thickness of coating increases. SEM and energy-dispersive X-ray spectroscopy revealed that the excellent oxidation resistance came from the formation of a thin layer rich in Al2O3 and silicon compound beneath the outer TiO2thin layer. (Correspondent: LIU Hianghuai, Professor, Shanghai Institute of Metallurgy, Chinese Academy of Sciences,Shanghai,200050)
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