利用固相反应制备的ZnO-Li_(2.2%)陶瓷靶和RF射频磁控溅射技术在Si(100)基片上制备了高度c轴择优取向的ZnO薄膜,XRD和电性能分析表明掺杂Li离子改善了ZnO靶材的结构和性能,同时研究了不同RF溅射温度对ZnO薄膜结构与取向的影响;然后采用sol-gel前驱单体薄膜制备方法,以ZnO为过渡层淀积PZT薄膜,探讨高度c轴(002)择优取向ZnO薄膜对PZT薄膜结构与性能的影响,实验发现在PZT/ZnO异质结构中,致密、均匀和高度c轴择优取向的ZnO可作为晶核,促进PZT钙钛矿结构转化、晶粒(110)择优取向生长,相应降低PZT薄膜的退火温度.
By using Li_(2.2%)-doped ZnO ceramic target that was prepared by solid-state reaction and RF magnetron sputtering technique, the highly c-axis (002) preferred orientation ZnO films were deposited on Si(100) substrates. The analyses from XRD and electrical properties reveal that the microstructure of zinc oxide targets has been much improved by Li~+ doping. The influence of different RF deposition temperature on the microstructure and preferred orientation of ZnO films was also studied. And then PZT thin films were grown on the transition-layer ZnO by the separated precursor-monomer method of sol-gel process. The effects of highly c-axis (002) preferred orientation ZnO films on the microstructure and preferred orientation of PZT films were further investigated. The results show that the ZnO films of dense, homogeneous and high c-axis orientation can serve as nucleation sites in PZT/ZnO heterostructure to promote the perovskite phase crystallization of PZT films and grains growth with (110) preferred orientation. The annealing temperature of PZT films can be reduced accordingly.
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