采用真空热蒸发方法,以高纯CdTe粉末为蒸发源,在石英和AZO玻璃上沉积了厚度约为485 nm的CdTe薄膜,随后在N2氛围中于250～400℃条件下进行后退火处理.利用X射线衍射仪、拉曼光谱仪、分光光度计和数字源表测量了不同退火温度条件下样品的结构、光学和电学特性.结果表明,所制备的薄膜为立方闪锌矿结构,择优取向为< 111>晶向,提高退火温度可以促进薄膜结晶;光学测量结果证实,随退火温度升高,薄膜样品的光学带隙由1.527 eV减小到1.496 eV;电流-电压测试表明,薄膜电导率随退火温度的增加,由0.97 μS/cm增大至87.3 μS/cm.
Cadmium telluride (CdTe) thin films with thickness of 485 nm were deposited on quartz and AZO coated glass substrates surface by vacuum thermal evaporation method using high purity CdTe powder as evaporation source.Then,effect of annealing at 250-450 ℃ in nitrogen atmosphere on properties of the CdTe thin films was studied.Structure,optical and electrical properties of the CdTe thin films were characterized by means of X-ray diffraction (XRD),Raman spectrometer,spectrophotometer and digital source meter.The results show that the films are cubic zinc blende structure with < 111 > of preferred orientation.With increasing the annealing temperature,the crystallization of the CdTe thin films can be promoted,optical band gap of the CdTe thin films decreases from 1.527 eV to 1.496 eV,and the electrical conductivity increases from 0.97 μS/cm to 87.3 μS/cm.
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