The influence of different relative density on the cyclic oxidation behaviors of MoSi2 at 1 273 K were studied. "Pesting" was not found in all MoSi2 materials after being oxidized for 480 h. All samples exhibited continuous mass gain during the oxidation process. The mass gains of MoSi2 with the lowest relative density (78.6%) and the highest relative density (94.8%) are increased by 8.15 mg·cm2 and 3.48 mg·cm-2, respectively. The surface of the material with lower relative density formed a loose, porous and discontinuous oxidation scale, which accelerated oxygen diffusion and aggravated the oxidation process. However, a dense scale in the material with higher relative density is formed, which acts a diffusion barrier to the oxygen atoms penetrating into the matrix. The high temperature oxidation resistance of MoSi2 can be improved by increasing its relative density.
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