用阴离子聚合法原位一步合成了PS/MoS2插层复合材料,通过XRD、FT-IR及SEM对复合材料的结构进行了表征,结果表明,MoS2经聚苯乙烯插层后,层间距扩大了0.672 nm,形成的是插层型复合材料.通过XPS对一步法和两步法(剥层重堆法)制备的插层复合材料的氧化行为进行了研究,结果表明,一步法和两步法合成的PS/MoS2插层复合材料的氧化行为不同,前者主要是MoS2中的Mo4+氧化为Mo6+,后者主要是MoS2中的S2-氧化为S6+.
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