本文提供了一种简单、可控的制备直立纳米线阵列的方法。采用循环伏安法在多孔阳极氧化铝模板中电沉积了Ag、Cu、Au金属纳米线阵列。SEM图片证明模板孔洞的填充率非常高。XRD分析结果表明，纳米线阵列都具有面心立方结构。采用循环伏安法可以方便地调节电沉积时间，进而有效地调控金属纳米线的长径比。去除模板后发现，当纳米线的长径比较大时，纳米线易于倒塌，聚集在一起。当纳米线的长径比在一定范围时，易于获得高密度、直立在导电衬底上的纳米线阵列。
Free-standing nanowire arrays were fabricated by a simple and controllable method. Metal nanowire arrays of Cu, Ag and Au were electrodeposited using cyclic voltammetry with assistance of anodic aluminum oxide template. Scanning electron microscope (SEM) results demonstrated that the percentage of pore filling was very high. X-ray diffraction (XRD) patterns of metal nanowries were indexed to face-centered cubic structure. Aspect ratio of nanowire arrays can be tuned by changing the electrodeposition time in cyclic voltammetry. After the template was removed, the nanowire arrays with a high aspect ratio normally collapse into an entangled mess. While the high density and free-standing nanowire arrays can be easily obtained on the conductive substrate when the aspect ratio of nanowire is in a range.
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