气凝胶薄膜具有超低的介电常数,在超大规模集成电路互连系统中有着巨大的应用潜力.采用溶胶-凝胶技术,通过酸/碱二步法控制实验条件,结合低表面张力溶剂替换以及CH3非活性基团置换修饰、超声振荡等,不需要超临界干燥,而仅在常压下就可以通过简单的提拉过程制备出疏水型低介电常数气凝胶薄膜.测得的红外透射光谱表明所制备的薄膜由于掺入甲基基团而疏水,接触角测试值约120°,制备过程中充分注意到:稀释、老化、有机修饰表面、热处理和提拉条件对膜的影响,使其过程达到最佳.热处理温度在150～650℃,采用6%三甲基氯硅烷时,制得的疏水型气凝胶薄膜折射率为1.08～1.12,介电常数为1.62～1.92.
Hydrophobic silica aerogel films with low dielectric constant were prepared by a two-step sol-gel dip-coating procedure at ambient pressure.The as-prepared gel film was taken for solvent exchange and reaction with trimethylchlorosilane(TMCS)instead of supercritical drying.Surface modifications were identified by FTIR.Contact angle values of the films are about 120°.The process was optimized by varying the dilution,aging,organic substitution,organic modification,heat treatment and dip-coating conditions.When heated in the range of 150～650℃and 6%TMCS was used,hydrophobic Silica aerogel films with refractive indices of 1.08～1.12 and dielectric constants of 1.62～1.92 were synthesized.
参考文献
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| [2] | 殷明志,姚熹,吴小清,汪敏强,张良莹.溶胶-凝胶法制备纳米二氧化硅溶胶和多孔二氧化硅薄膜[J].硅酸盐学报,2002(06):766-770. |
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