采用三电极体系恒电压电沉积法制备了Cu-In薄膜,经硒化退火生成CuInSe_2薄膜.采用循环伏安法研究了电沉积Cu-In的循环伏安特性,确定其最佳沉积电位在-0.75V左右,Cu与In的化学计量比为1.1,达到了理想前驱体的Cu与In的化学计量比.研究了不同沉积电位下材料组成、结构与性能的影响.硒化后,Cu与In的化学计量比为1,1时形成了比较单一的CuInSe_2黄铜矿相结构.
Thin films of copper indium selenizate (CuInSe_2) are grown on Mo substrates by selenization of CuIn precursors are prepared by electrodeposition. Firstly the electrodeposition and of Cu-In alloy is studied by the methods of cyclic voltammetry. The results show that the optimum potentials for electrodeposition is about-0.75V(vs SCE), it is observed that the Cu/In atomic ratio is 1.1.Cu-In thin films are prepared at different deposition potentials. The influences of composition and ctructure on the propenties are investigated. After selenization, stoichiometric CIS films with a single chalcopyrite phase are synthesized from Cu-In precursors.
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