针对硅烷热分解生产多晶硅的过程,建立了基于动量、质量、能量同时传递并耦合硅烷热分解反应的硅烷-氢气化学气相沉积模型,采用计算流体力学方法分析了传统钟罩式硅烷反应器内的流场、温度场和浓度场.针对普通反应器内存在的死区以及沉积速率不均匀的问题,提出了新型的带出气筒的反应器结构,并对结构进行了数值模拟.计算结果表明,与普通钟罩式硅烷反应器相比,新型反应器的流场、温度场以及硅烷浓度分布更加合理,有效减小了反应器内的漩涡,缓解了气体在进出口间的“短路”现象,使硅棒表面的沉积速率更加均匀.
参考文献
| [1] | 张攀,王伟文,陈光辉,李建隆.流态化多晶硅化学气相沉积过程的数值模拟[J].人工晶体学报,2012(04):942-949. |
| [2] | 王子松,黄志军,覃攀,雷雳光,印永祥,戴晓雁.西门子CVD还原炉内硅棒生长环境的数值模拟[J].人工晶体学报,2012(02):507-512. |
| [3] | 张华芹,茅陆荣.多晶硅气相沉积反应器的研发与应用[J].化工设备与管道,2012(05):24-28. |
| [4] | 姚晓晖,罗列,俞晓晶,朱成良,姚奎鸿.传统硅烷分解炉内分解过程的模拟[J].浙江理工大学学报,2009(06):901-905. |
| [5] | Jadkar SR;Sali JV;Funde AM;Bakr NA;Vidyasagar PB;Hawaldar RR;Amalnerkar DP .Deposition of hydrogenated amorphous silicon (a-Si : H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2007(8):714-720. |
| [6] | S.R. Jadkar;J.V. Sali;S.T. Kshrisagar;M.G. Takwale .Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot wire chemical vapor deposition: role of filament temperature[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):18-24. |
| [7] | Filtvedt, W.O.;Javidi, M.;Holt, A.;Melaaen, M.C.;Marstein, E.;Tathgar, H.;Ramachandran, P.A. .Development of fluidized bed reactors for silicon production[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2010(12):1980-1995. |
| [8] | Van Veldhuizen S;Vuik C;Kleijn CR .Comparison of numerical methods for transient CVD simulations[J].Surface & Coatings Technology,2007(22/23):8859-8862. |
| [9] | W.T.Cheng;H.C.Li;C.N.Huang .Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method[J].Chemical engineering journal,2008(3):603-613. |
| [10] | N.Reuge;L.Cadoret;B.Caussat .Multifluid Eulerian modelling of a silicon Fluidized Bed Chemical Vapor Deposition process:Analysis of various kinetic models[J].Chemical engineering journal,2009(2/3):506-516. |
| [11] | 硅烷热分解生产多晶硅的三维模拟[J].人工晶体学报,2012(06):1587-1594. |
| [12] | Kenichi Tonokura;Mitsuo Koshi .Reaction kinetics in silicon chemical vapor deposition[J].Current opinion in solid state & materials science,2002(5):479-485. |
| [13] | Cai D.;Zheng LL.;Wan Y.;Hariharan AV.;Chandra M. .Numerical and experimental study of polysilicon deposition on silicon tubes[J].Journal of Crystal Growth,2003(1/2):41-49. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%