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报道了高溶解性能的电子转移复合物铜-(2,5-二丙酸甲酯-7,7,8,8-四氰基对苯醌二甲烷);并对其紫外可见光光谱进行了研究.用旋涂工艺制备了Cu-TCNQ(C2H4COOCH3)2薄膜,并对该薄膜的可擦重写光存储性能及其机理进行了研究.短波长(514.5nm)静态可擦重写光存储性能测试结果表明:在写入功率为9mW,写入脉冲为80ns,擦除功率为4mW,擦除脉冲为500ns时反射率对比度>15%(无反射膜),循环次数可达110次以上,并且没有出现任何疲劳现象.

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