本文利用基于非正交网格的二阶精度有限体积法,对氨热法生长过程中温度场和流场进行了模拟,其中隔板开孔率分别为10%(中心开孔5%,侧壁与隔板边缘开孔5%)和20%(中心开孔10%,侧壁与隔板边缘开孔10%).通过对流场和温度场的分析,了解了高压釜内部营养素的输运及溶液结晶的本质.结果显示在釜底的多孔介质层流动较弱,在流体层流动较强.在多孔介质层热量的输运主要通过热传导;在流体层中,流体与原料的分界处以及流体和高压釜的侧壁出现了大的温度梯度.
In this paper,we employ a finite-volume program based on the non-orthogonal grid and the 2nd-order space discretization to investigate the temperature and flow fields in the ammonothermal growths of single GaN crystals,with the baffle openings of 10%(central opening of 5% and ring opening of 5%)and 20%(central opening of 10%and ring opening of 10%)in the cross-sectional area.By analyzing the flow and temperature fields,we can understand the mechanism of the nutrient transport inside the autoclave and crystal growth from solution.The simulation results show that,the flow in the porous layer is weak,while that is strong in the fluid layer.The heat transfer in the porous layer is mainly through conduction.In the fluid layer,a large temperature gradient exists at the fluid/charge interface and the fluid/autoclave interface.
参考文献
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