采用真空共蒸发法制备了Cd_(1-x)Zn_xS多晶薄膜,研究了Cd_(1-x)Zn_xS(x=0.88)多晶薄膜的结构与光电特性.XRD的结果表明,0＜x≤0.9,Cd_(1-x)Zn_xS薄膜为六方结构,高度择优取向;荧光光谱分析与Vegard定理的结果以及石英振荡法监测的Cd_(1-x)Zn_xS多晶薄膜的组分吻合;制备的Cd_(1-x)Zn_xS多晶薄膜的光学透射谱的吸收边随Zn含量的增加发生蓝移,其光学能隙调制在CdS与ZnS能隙之间;最后测量了Cd_(1-x)Zn_xS薄膜室温电阻率及暗电导率随温度的变化情况,计算了Cd_(1-x)Zn_xS薄膜的电导激活能.
In this paper,the polycrystalline Cd_(1-x)Zn_xS thin films were prepared by the vacuum co-evaporation method and structural,optical,and electrical properties of Cd_(1-x)Zn_xS(x=0.88) thin films were investigated.Cd_(1-x)Zn_xS(0＜x≤0.9) thin films were hexagonal structure and showed highly preferential orientation.The composition of Cd_(1-x)Zn_xS thin films determined from Vegard law and quartz crystal oscillation method agrees with that determined from the X-ray fluorescence spectra.Optical absorption edge of optical transmittance for Cd_(1-x)Zn_xS thin films exhibits a blue shift with the increase of the zinc content,which indicates that optical energy gap can be tuned between 2.44-3.78eV.Finally,the values of dark conductivity for Cd_(1-x)Zn_xS thin films at various temperatures were measured,and conductivity activation energies were calculated.
参考文献
| [1] | Jia A.;Kobayashi M.;Kato Y.;Shimotomai M.;Yoshikawa A. Takahashi K.;Furushima T. .Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates[J].Journal of Crystal Growth,2000(0):1085-1090. |
| [2] | Matsumura N;Ueda J;Saraie J .[J].Japanese Journal of Applied Physics,2000,39:L1026. |
| [3] | Kuznetsov PI.;Jitov VA.;Yakushcheva GG.;Shchamkhalova BS.;Zakharov LY. Kozlovsky VI.;Skasyrsky YK.;O'Donnell KP.;Trager-Cowan C. .Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE[J].Physica, E. Low-dimensional systems & nanostructures,2003(1/4):516-517. |
| [4] | Yamaguchi T;Matsufusa J;Yoshida A .[J].Japanese Journal of Applied Physics,1992,3:L703. |
| [5] | Yamaguchi T.;Tanaka T.;Demizu Y.;Yoshida A.;Yamamoto Y. .(CD,ZN)S THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION FOR PHOTOVOLTAIC DEVICES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):375-378. |
| [6] | Chu T L;Chu S S;Britt J et al.[J].Journal of Applied Physics,70(05):2688-2693. |
| [7] | Gaewdang Ng;Gaewdang T .[J].Materials Letters,2005,59:3577-3584. |
| [8] | Wongcharoen Ng;Gaewdang T.Technical Digest of the International PVSEC-15[M].Shanghai:PVSEC,2005 |
| [9] | Patidar D;Saxena NS;Sharma TP .Structural, optical and electrical properties of CdZnS thin films[J].Journal of Modern Optics,2008(1):79-88. |
| [10] | Kumar P;Misra A;Kumar D et al.[J].Optical Materials,2004,27:261-264. |
| [11] | Torres J;Gordillo G .[J].Thin Solid Films,1997,310:310-316. |
| [12] | 李卫,冯良桓,武莉莉,蔡亚平,张静全,郑家贵,蔡伟,黎兵,雷智,张冬敏.CdSxTe1-r多晶薄膜的制备与性质研究[J].物理学报,2005(04):1879-1884. |
| [13] | Fahrenbruch A L;Bube R H.Fundamentals of Solar Cells[M].New York:Academic Press,Inc,1983 |
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