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采用低成本、易操作的溶胶-凝胶法制备高质量的GaN纳米线.以硝酸镓为镓源、柠檬酸为络合剂制备出前驱物溶胶,甩胶于覆有催化剂的Si(111)衬底上,在氨气气氛下制备出GaN纳米线.利用XRD、SEM、TEM、EDS等对GaN纳米线进行表征与分析,结果表明1000℃氨化温度下,制备出的纳米线结晶度好,形貌优.并研究了催化生长GaN纳米线的生长机理.

参考文献

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