目前,制备性能优异的p-ZnO薄膜的可重复性问题已成为制约ZnO基光电器件发展的一个主要因素.本文利用直流反应磁控溅射技术,以X射线衍射,霍尔效应测试,X射线光电子能谱及透射光谱为表征手段,研究了不同衬底温度对Al+N共掺p-ZnO薄膜电学、光学、结晶性能的影响,并从N2O的分解反应及衬底表面各种原子的迁移过程提出导致薄膜性能差异的原因.在最佳衬底温度(500℃)时,p-ZnO薄膜空穴浓度达2.52×1017cm-3,电阻率为28.3Ω·cm.
The development of ZnO based devices suffered from one major disadvantage: the lack of good, reproducible, p-type material. In this paper, Al+N codoped p-type ZnO films were fabricated by DC reactive magnetron sputtering. X-ray diffraction, X-ray photoelectron spectroscopy, transmittance spectra and Hall-effect measurement were carried out to discuss the effects of substrate temperatures on the properties of codoped ZnO films and the possible reasons. The results show that the codoped ZnO films can be realized at the substrate temperature of 500℃ with a p-type conduction, carrier density of 2.52×1017cm-3 and resistivity of 28.3Ω·cm.
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