Morphology Simulation for Ion-Assisted Deposition Process

材料热处理学报, 2004, 25(5): 724-728.

^1, , ^2, , ^3,

1.National Unite University, Maio-Li, Taiwan, China

2.National Sun-Yat-Sen University, Kaohsiung, Taiwan, China

3.National Cheng-Kung University, Tainan, Taiwan, China

基金项目: research by the National Science Council, Republic of China(NSC 90-2212-E-239-004)

Morphology Simulation for Ion-Assisted Deposition Process

The molecular dynamics simulation is applied to investigate the influence of the incident ion energy and incidentangular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the manysurface roughness properties at both transient and final state conditions. The results show that the surface roughness of thedeposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low orhigh incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of theargon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.

参考文献

[1]	S M Rossnagel;J J Cuomo;W D Westwood.Handbook of Plasma Processing Technology[M].Noyes Publications,New Jersey,1990
[2]	W N G Hitchon.Plasma Processes for Semiconductor Fabrication[M].Cambridge University Press,UK,1999
[3]	M A Lieberman;A J Lichtenberg.Principles of Plasma discharges and Materials Processing[M].John Wiely & Sons Inc,1994
[4]	J Waldrof .Nulecular Instruments and Methods[J].Physics Research B,1996,113
[5]	Novotny;P Sutta;F Mika;V Tvarozek.IEEE Proc 20th International Conference on Microelectronic (MIEL'95)[C].,1995:65.
[6]	S Aisenberg;R W Chabot .[J].Journal of Vacuum Science and Technology,1973,10:104.
[7]	P Martin .[J].IEEE Transactions on Plasma Science,1990,18:855.
[8]	R Ditchfield;E G Seebauer .[J].Physical Review Letters,1999,82:1185.
[9]	C Klatt;G K Wolf .[J].Surface and Coatings Technology,1995,74-75:966.
[10]	K H Muller .[J].Physical Review B,1987,35:7906.
[11]	M H Carlberg;E P Munger;V Chirita .[J].Physical Review B,1996,54:2217.
[12]	M Kitabatake;J E Greene .[J].THIN SOLID FILMS,1996,272:271.
[13]	B Strickland;C Roland .[J].Physical Review B,1995,51:5061.
[14]	S A Fedotov;A A Efimchik;A V Byeli .[J].Diamond and Related Materials,1997,6:1638.
[15]	L Dong;D J Srolovitz .[J].Journal of Applied Physics,1998,84:5261.
[16]	C K Kim;A Kubota;D J Economou .[J].Journal of Applied Physics,1999,86:6758.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Morphology Simulation for Ion-Assisted Deposition Process

参考文献