采用直流磁控溅射制备TaN薄膜,研究了热处理对TaN薄膜微结构及电性能的影响.结果表明,退火温度及退火时间都将影响薄膜的微结构及方阻.随退火温度的升高和时间的延长,TaN薄膜的方阻逐渐增大,但当退火温度高于800℃时,由于氧化严重导致薄膜的方阻异常增大.退火可显著改善薄膜的TCR,制备态TaN薄膜的TCR值为-1.2X10-3,薄膜经800℃退火30min后,其TCR可降低到-7.0x10-4.
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