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采用阳极氧化法在纯Ta表面制备绝缘性优良的Ta2O5介质膜,分析阳极氧化制备Ta2O5膜的基本机理,讨论不同电解液、阳极氧化电压及热处理等工艺参数对Ta2O5膜性能的影响.利用XRD、EDS和AFM分析薄膜的组织结构和表面形貌,超高阻微电流测试仪测试Ta2O5绝缘膜漏电流特性和耐击穿电压,结果表明,磷酸电解液中添加适当乙二醇溶液能有效地防止"晶化",阳极氧化电压在125~150V范围内制备Ta2O5绝缘膜耐击穿电压能力强,经350℃/60min大气气氛下热处理Ta2O5薄膜,内部结构致密,能有效提高Ta2O5绝缘膜耐击穿电压.

参考文献

[1] Ghozati SB.;Honsberg CB.;Wenham SR.;Ebong AU. .Improved fill-factor for the double-sided buried-contact bifacial silicon solar cell[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(2):121-128.
[2] Huebner U;Boucher R;Morgenroth W et al.[J].Micro-electronic Engineering,2005,78-79:422-428.
[3] Lee C C;Jan D J .[J].Thin Solid Films,2005,483(1-2):130-135.
[4] Chaneliere C;Four S;Autran J L et al.[J].Microelectropics and Reliability,1999,39(02):261-267.
[5] Choi YS.;Kang JH.;Kim HY.;Lee BG.;Lee CG.;Kang SK.;Jin YW.;Kim JW. Jung JE.;Kim JM. .A simple structure and fabrication of carbon-nanotube field emission display[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2004(1/4):370-374.
[6] Jinghua Huang;Dejie Li .Electron energy distribution rebuilding at the insulator-semiconductor interface in AC thin film electroluminescent and field emission display devices[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(2):178-182.
[7] Engelsen D D .[J].Physics Procedia,2008,1(01):355-365.
[8] Cho S D;Paik K W .[J].Materials Science and Engineering B:Solid State Materials for Advanced Technology,1999,6(03):108-112.
[9] Philippe Combette;Laurianne Nougaret;Alain Giani;Frederique Pascal-delannoy .RF magnetron-sputtering deposition of pyroelectric lithium tantalate thin films on ruthenium dioxide[J].Journal of Crystal Growth,2007(1):90-96.
[10] 张光勇,薛亦渝,郭培涛,王汉华,马中杰.电子束蒸发沉积Ta2O5光学薄膜的研究[J].压电与声光,2008(01):12-15.
[11] Piret, F;Singh, M;Takoudis, CG;Su, BL .Optical properties in the UV range of a Ta2O5 inverse opal photonic crystal designed by MOCVD[J].Chemical Physics Letters,2008(1/3):87-91.
[12] 陆胜,刘仲娥,梁正书,刘凌,阴学清.Ta2O5介质膜性能对液体钽电容器性能的影响[J].压电与声光,2006(04):475-477,480.
[13] Fuhrmann J.Improvement of MIM-addressed Projection Light Valves Using Advanced Electronic Resins[A].San Diego,California,USA,1996:603-606.
[14] Schneider U;Bauerde R;Lueder E.A 10in MIM-PDLC Display with Improved MIMs for Higher Voltage[A].United States of America,1995:27-30.
[15] 刘洪武.氢热处理绝缘体表面对金属-绝缘体-金属开关器件I-V特性的影响[J].吉林大学自然科学学报,1998(03):52-54.
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