对半导体GaAs的高低密勒指数表面的性质进行了比较研究.根据表面的原子排列分别计算了(001)、(114)、(113)、(112)和(111)各晶向的表面悬挂键密度以及表面的多余电子密度,探讨了理想表面和稳定表面的差别以及影响表面稳定性的因素.研究表明低指数表面的稳定性并不优于高指数表面,表面稳定性满足表面电子数目规则优于满足表面悬挂键数目最少原则.
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