为改善聚乙撑二氧噻吩∶聚（对苯乙烯磺酸）根阴离子（PEDOT/PSS）薄膜的光学及电学性能,采用共混-旋涂法在石英玻片上制备出溴掺杂的PEDOT/PSS透明导电膜,并就其掺杂导电机理进行了探讨.结果表明：经微量溴掺杂后的PEDOT/PSS薄膜,其透光性能与导电性能均得到提高;质量分数6%溴掺杂条件下,薄膜透光率为95.11%,电导率为77 S/cm,较未掺杂薄膜分别提高了2.5%和295%;经霍尔效应分析仪、傅立叶变换拉曼光谱、原子力显微镜分析可知,掺杂前后薄膜电学性能变化主要源于HBrO与Br2对PEDOT主链的氧化效应.
To improve the optical and electrical properties of poly（3,4-ethylenedioxythiophene）/poly（4styrenesulfonate）（PEDOT/PSS）film,the PEDOT/PSS doped with bromine transparent conducting thin films were fabricated on quartz substrates by blending-spin coating method.The mechanism of the conductivity enhancement in the composite film was discussed.Compared with a pristine film（i.e.,without bromine）,the bromine-doped PEDOT/PSS film shows an improved optical transmission and conductivity.For optimized bromine concentration（6wt%）,the optical transmission and conductivity increase to 95.11%and 77S/cm respectively,which are more about 2.5%and 295%than those of films without bromine doping.The analysis by hall effect measurement system,fourier transform raman spectroscopy and atomic force microscopy shows that the mechanism of conductivity enhancement in PEDOT/PSS film doped with bromine is affected by the oxidative characteristics of hydrobromic acid and bromine oxidation on PEDOT chains.
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