分析了阀金属钽氧化膜的形成过程,伏安特性测试结果表明Ta-Ta2O5-电解液体系具有单向导电性.电场作用下,电解液中O2-跃过氧化膜/电解液界面,在氧化膜中形成定向迁移,同时引发膜内二次电子场助发射是该体系的主要导电机理.实验表明,大量二次电子导致介质膜雪崩式击穿是该体系闪火的主要原因,在电解液中添加适量有机物,可以屏蔽O2-使电解液的闪火电压提高30V以上,从而提高液体钽电解电容器的性能.
参考文献
| [1] | Bispinck H;Ganschow O;Wiedmann L et al.Combined SIMS,AES,and XPS investigations of tantalum oxide layers[J].Applied Physics,1979,18(02):113. |
| [2] | Lu Q .Anodic film growth on tantalum in dilute phosphoric acid solution at 20℃ and 85℃[J].Electrochimica Acta,2002,47(17):2761. |
| [3] | Prymak J D .New tantalum capacitors in power supply applications[J].Industry Appl Conference,1998,2:1129. |
| [4] | 于家宁;李荐 .钽阳极氧化膜生成机理的探讨[J].湖南有色金属,2000,16(02):25. |
| [5] | 刘仲娥,宋金荣,陈晓静,李忆莲,桂娟.Influence of Electrolyte on ESR of Medium Voltage Wet Tantalum Capacitors[J].天津大学学报(英文版),2004(03):163-166. |
| [6] | Wang C;Fang L;Zhang G;Zhuang DM;Wu MS .I-V characteristics of tantalum oxide film and the effect of defects on its electrical properties[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1/2):246-250. |
| [7] | 陆胜,刘仲娥,梁正书,刘凌,阴学清.Ta2O5介质膜性能对液体钽电容器性能的影响[J].压电与声光,2006(04):475-477,480. |
| [8] | 王耀东,刘仲娥,陆胜,阳元江,陈刚,陈晓静,宋金荣.中压大容量液体钽电解电容器电解质的研制[J].材料导报,2005(06):114-116,122. |
| [9] | 曲喜新.Ta-Ta2O5-对电极系统的导电机理[J].电子元件与材料,1986(03):19. |
| [10] | Pringle J P S .Transport numbers of metal and oxygen during the anodic oxidation of tantalum[J].Journal of the Electrochemical Society,1973,120(03):398. |
| [11] | Pringle J P S .The migration of oxygen during the anodic oxidation of tantalum[J].Journal of the Electrochemical Society,1973,120(10):1391. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%