由于大尺寸氮化镓单晶难以获得,只能用异质衬底来制作氮化镓器件,因此现在的氮化镓基器件的性能指标还远低于其理论值.氢化物外延法、高压熔体法、助熔剂法和氨热法等许多方法已经用做生长氮化镓大尺寸单晶.其中,氨热法易于实现尺寸扩大,有批量化生产低成本氮化镓晶片的潜力.目前有两个问题仍有待解决.首先是设备,如何增大高压釜口径为液氨溶液提供可靠的设备;第二个是生长工艺,如何以较低的成本得到大面积,低缺陷密度的氮化镓.本文简单综述了氨热法生长大尺寸氮化镓晶体进展.主要内容是关注氨热法的设备和生长工艺.最后探讨了氨热法合成氮化镓单晶的发展前景.
参考文献
[1] | Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura .Prospects for LED lighting[J].Nature photonics,2009(4):180-182. |
[2] | TADAO HASHIMOTO;FENG WU;JAMES S. SPECK .A GaN bulk crystal with improved structural quality grown by the ammonothermal method[J].Nature materials,2007(8):568-571. |
[3] | 殷立雄,王芬,杨茂举,黄艳.Ga2O3氮化法合成GaN粉体的研究[J].硅酸盐通报,2006(04):41-44. |
[4] | 景钰洲,王雪文,杨怡,赵武,邓周虎.GaN纳米线的溶胶-凝胶法制备及表征[J].硅酸盐通报,2012(05):1243-1246. |
[5] | 贾婷婷,林辉,滕浩,侯肖瑞,王军,周圣明.异质衬底上HVPE法生长GaN厚膜的研究进展[J].人工晶体学报,2009(02):501-505. |
[6] | 周明斌,李振荣,范世(马岂),徐卓.7 MPa氮压下Na助熔剂法生长GaN晶体的研究[J].人工晶体学报,2013(02):203-207,225. |
[7] | B. Lucznik;B. Pastuszka;I. Grzegory;M. Bockowski;G. Kamler;E. Litwin-Staszewska;S. Porowski .Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates[J].Journal of Crystal Growth,2005(1):38-46. |
[8] | Hisanori Yamane;Masahiko Shimada;Simon J.Clarke .Preparation of GaN single crystals using a Na flux[J].Chemistry of Materials,1997(2):413-416. |
[9] | R. Dwilinski;R. Doradzinski;J. Garczynski;L. Sierzputowski;J. M. Baranowski;M. Kaminska .AMMONO method of GaN and AlN production[J].Diamond and Related Materials,1998(9):1348-1350. |
[10] | Recent achievements in AMMONO-bulk method[J].Journal of Crystal Growth,2010(18):2499-2502. |
[11] | R. Dwilinski;R. Doradzinski;J. Garczynski;L.P. Sierzputowski;A. Puchalski;Y. Kanbara;K. Yagi;H. Minakuchi;H. Hayashi .Bulk ammonothermal GaN[J].Journal of Crystal Growth,2009(10):3015-3018. |
[12] | Piotr Perlin;Lucja Marona;Katarzyna Hole;Przemek Wisniewski;Tadek Suski;Mike Leszczynski;Robert Czemecki;Stephen Najda;Marcin Zajac;Robert Kucharski .InGaN Laser Diode Mini-Arrays[J].Applied physics express,2011(6):62103.1-62103.3. |
[13] | 许涛,许燕萍,曹永革,兰玉成,李建业,张王月,杨志,陈小龙.氮化镓纳米固体的合成及其激光拉曼光谱[J].人工晶体学报,2001(02):154-158. |
[14] | Dirk Ehrentraut;Yuji Kagamitani;Tsuguo Fukuda;Fumio Orito;Shinichiro Kawabata;Kizuku Katano;Shigeru Terada .Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride[J].Journal of Crystal Growth,2008(17):3902-3906. |
[15] | Buguo Wang;M.J. Callahan;K.D. Rakes;L.O. Bouthillette;S.-Q. Wang;D.F. Bliss;J.W. Kolis .Ammonothermal growth of GaN crystals in alkaline solutions[J].Journal of Crystal Growth,2006(2):376-380. |
[16] | Callahan M;Wang BG;Rakes K;Bliss D;Bouthillette L;Suscavage M;Wang SQ .GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia[J].Journal of Materials Science,2006(5):1399-1407. |
[17] | 曾骥良,周卫宁,张昌龙,霍汉德.宝石晶体水热法生长的原理和技术[J].中国宝玉石,2008(01):84-87. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%