为了弥补常规粉末渗硅工艺的缺陷,探索施加直流电场加速粉末渗硅的可行性,在45钢和渗剂之间施加合适参数的直流电场,实现快速粉末渗硅,并分析了渗硅层显微组织、厚度及相组成.结果表明:直流电场可显著提高渗速,使渗硅温度降低到750℃,渗硅时间缩短至2h;直流电场条件下获得的渗硅层主要为Fe5Si3相.
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