概述了化学机械抛光作用机制,着重阐述了3种常见衬底(α-Al2O3,SiC,Si)的化学机械抛光现状,主要从抛光工艺参数和抛光液组成(不同磨料、磨料粒径、氧化剂、络合剂、pH值等)对晶片抛光效果的影响展开研究,并指出了目前化学机械抛光存在的问题,进一步展望了LED衬底化学机械抛光的发展前景.
参考文献
[1] | 张雪平 .蓝宝石晶体生长与LED应用研究[D].湖南大学,2012. |
[2] | PENG D S;JIN K;ZHENG R S.Comparative Study of GaN-based LED Grown on Different Substrates[A].Germany:Wiley-VCH Verlag GmbH,2011:2241-2244. |
[3] | KELLER S;KELLER E P;WU Y F et al.Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Met Alorganic Chemical Vapor Deposit ion[J].Applied Physics Letters,1996,68(11):125-129. |
[4] | Rosner SJ;Carr EC;Ludowise MJ;Girolami G;Erikson HI .Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition[J].Applied physics letters,1997(4):420-422. |
[5] | Hansen M.;Fini P.;Craven M.;Heying B.;Speck JS.;DenBaars SP. .Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN[J].Journal of Crystal Growth,2002(4):623-630. |
[6] | Sasaoka C.;Kimura A.;Nido M.;Usui A.;Sakai A.;Sunakawa H. .High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy[J].Journal of Crystal Growth,1998(0):61-66. |
[7] | PUNAM P.Characterization of the Nucleation Layer inGaN Sapphire Hetero Structures[M].USA:North Carolina State University,2005:7. |
[8] | RAHUL J;JANOS F;HUANG C K et al.Chemical Mechanical Polishing:Process Manufacturability[J].SOLID STATE TECHNOLOGY,1994,37(07):71-75. |
[9] | 彭进,夏琳,邹文俊.化学机械抛光液的发展现状与研究方向[J].表面技术,2012(04):95-98. |
[10] | 宋晓岚,李宇煙,江楠,屈一新,邱冠周.化学机械抛光技术研究进展[J].化工进展,2008(01):26-31. |
[11] | J. Xu;J. B. Luo;L. L. Wang;X. C. Lu .The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing[J].Tribology International,2007(2):285-289. |
[12] | HOMMA Y;FURUSAWA T;KUSUKAWA K.Selectivity Mechanism of Silicon Oxide CMP for Global Planarization[A].,1997:385-394. |
[13] | 高慧莹.国内LED衬底材料的应用现状及发展趋势[J].电子工业专用设备,2011(07):1-6. |
[14] | 张克华,文东辉,袁巨龙.高亮度LED衬底材料研究[J].功能材料,2009(05):709-712,716. |
[15] | HADER B .Super polishing of Sapphire:a Method to Produce Atomically Flat and Damage Free Surfaces[J].Surface Science,1989,220(01):118-130. |
[16] | 王银珍,周圣明,徐军.蓝宝石衬底的化学机械抛光技术的研究[J].人工晶体学报,2004(03):441-447. |
[17] | NIU X H;LIU Y L;TAN B M.Method of Surface Treatment on Sapphire Substrate[J].Transactions of Nonferrous Metals Society of China,2006(16):S732-S734. |
[18] | ZHANG Z F;LIU W L;SONG Z T et al.Effect of Mechanical Process Parameters on Friction Behavior and Material Removal during Sapphire Chemical Mechanical Polishing[J].Microelectronic Engineering,2010,87:2168-2172. |
[19] | 刘金玉,刘玉岭,项霞,边娜.磨料对蓝宝石衬底去除速率的影响[J].半导体技术,2010(11):1064-1066,1082. |
[20] | Zhu HL;Tessaroto LA;Sabia R;Greenhut VA;Smith M;Niesz DE .Chemical mechanical polishing (CMP) anisotropy in sapphire[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2004(1/4):120-130. |
[21] | Sung-Woo Park;Yong-Jin Seo;Woo-Sun Lee .A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO_2)-mixed abrasive slurry (MAS)[J].Microelectronic engineering,2008(4):682-688. |
[22] | A. Jindal;S. Hegde;S. V. Babu .Chemical Mechanical Polishing Using Mixed Abrasive Slurries[J].Electrochemical and solid-state letters,2002(7):G48-G50. |
[23] | 于江勇,刘玉岭,牛新环,李英的,夏显召.混合磨料对LED用蓝宝石衬底CMP质量的影响[J].功能材料,2012(z1):84-86. |
[24] | XU W H;LU X C;PAN G S.Ultrasonic Flexural Vibration Assisted Chemical Mechanical Polishing For Sapphire Substrate[J].Applied Surface Science,2010(256):3936-3940. |
[25] | Zefang Zhang;Weili Liu;Zhitang Song;Xiaokai Hu .Two-Step Chemical Mechanical Polishing of Sapphire Substrate[J].Journal of the Electrochemical Society,2010(6):H688-H691. |
[26] | 王吉翠,邓乾发,周兆忠,李振,袁巨龙.蓝宝石晶片机械化学研磨抛光新方法研究[J].表面技术,2011(05):101-103. |
[27] | Canhua Li;Rongjun Wang;Joseph Seiler .Electro-Chemical Mechanical Polishing of Silicon Carbide[J].Materials Science Forum,2004(Pt.2):801-804. |
[28] | K. S. Lee;S. H. Lee;M. Kim .Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers[J].Materials Science Forum,2004(Pt.2):797-800. |
[29] | Engl K;Beer M;Gmeinwieser N;Schwarz UT;Zweck J;Wegscheider W;Miller S;Miler A;Lugauer HJ;Bruderl G .Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates[J].Journal of Crystal Growth,2006(1):6-13. |
[30] | LESTER S D;PONCE F A;CRAFORD M G et al.High Dislocation Densities in High Efficiency Gan-Based LightEmitting Diodes[J].Applied Physics Letters,1995,66(10):1294-1296. |
[31] | AKIHISA KUBOTA;KEITA YAGI;JUNJI MURATA;HEIJI YASUI;SHIRO MIYAMOTO;HIDEYUKI HARA;YASUHISA SANO;KAZUTO YAMAUCHI .A Study on a Surface Preparation Method for Single-Crystal SiC Using an Fe Catalyst[J].Journal of Electronic Materials,2009(1):159-163. |
[32] | QIAN W;SKOWRONSKI M;AUGUSTINE G et al.Characterization of Polishing-Related Surface Damage in (0001)Silicon Carbide Substrates[J].Journal of the Electrochemical Society,1995,142(12):4290-4294. |
[33] | Su Jianxiu,Du Jiaxi,Ma Lijie,Zhang Zhuqing,Kang Renke.Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3)abrasive[J].半导体学报(英文版),2012(10):142-148. |
[34] | C.L.Neslen;W.C.Mitchel;R.L.Hengehold .Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H-SiC[J].Journal of Electronic Materials,2001(10):1271-1275. |
[35] | ZHOU L;AUDURIER V;PIROUZ P et al.Chemomechanical Polishing of Silicon Carbide[J].Journal of the Electrochemical Society,1997,144(06):L161-L163. |
[36] | H. S. Lee;D. I. Kim;J. H. An;H. J. Lee;K. H. Kim;H. Jeong .Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS)[J].CIRP Annals,2010(1 CD/ROM):333-336. |
[37] | O. Eryu;K. Abe;N. Takemoto .Nanostructure formation of SiC using ion implantation and CMP[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2006(1/2):237-239. |
[38] | 陈秀芳,徐现刚,胡小波,杨光,宁丽娜,王英民,李娟,姜守振,蒋民华.6H-SiC衬底片的表面处理[J].人工晶体学报,2007(05):962-966. |
[39] | Roy Szweda .Successors to sapphire in the GaN market[J].III-Vs review,2002(7):26-30. |
[40] | M. A. Sanchez-Garcia;F. B. Naranjo;J. L. Pau .Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)[J].Journal of Applied Physics,2000(3):1569-1571. |
[41] | Chuong A. Tran;A. Osinski;R. F. Karlicek .Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy[J].Applied physics letters,1999(11):1494-1496. |
[42] | Guha S.;Bojarczuk NA. .Ultraviolet and violet GaN light emitting diodes on silicon[J].Applied physics letters,1998(4):415-417. |
[43] | J. W. Yang;A. Lunev;G. Simin .Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates[J].Applied physics letters,2000(3):273-275. |
[44] | DADGAR A;CHRISTEN J;RIEMANN T et al.Bright Blue Electroluminescence from an InGaN/GaN Multiquantumwell Diode on Si (111):Impact of an A1GaN/GaN Multilayer[J].Applied Physics Letters,2001,78(15):2211-2213. |
[45] | 周兆忠,袁巨龙,文东辉.蓝宝石衬底的超光滑表面加工进展[J].航空精密制造技术,2009(03):8-13. |
[46] | 宋晓岚,刘宏燕,杨海平,张晓伟,徐大余,邱冠周.纳米SiO2浆料中半导体硅片的化学机械抛光速率及抛光机理[J].硅酸盐学报,2008(08):1187-1194. |
[47] | 陈建清,陈杨,陈志刚,陈康敏.超细CeO2磨料对硅片的抛光性能研究[J].中国机械工程,2004(08):743-745. |
[48] | Yuling Liu;Kailiang Zhang;Fang Wang;Weiguo Di .Investigation on the final polishing slurry and technique of silicon substrate in ULSI[J].Microelectronic engineering,2003(1/4):438-444. |
[49] | Y. G. Wang;L. C. Zhang;A. Biddut .Chemical effect on the material removal rate in the CMP of silicon wafers[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,2011(3/4):312-316. |
[50] | E.Estragnat;J.M.Martin;G.Tang;H.Liang;S.Jahanmir;P.Pei .Experimental Investigation on Mechanisms of Silicon Chemical Mechanical Polishing[J].Journal of Electronic Materials,2004(4):334-339. |
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