以CH3SiCl3为源物质,H2为载气,Ar气为稀释气体,研究了沉积温度和沉积气氛压力对SiC沉积形貌的影响.应用晶体成核-长大理论和SiC沉积热力学理论,解释了SiC沉积的各种形貌.研究表明;降低系统压力和提高沉积温度,能减小SiC在气相中形核所需的最大能量,促进形核.SiC沉积热力学随沉积条件的改变决定了SiC沉积形貌的改变.
The effects of deposition temperature and system pressure on the morphology of deposited silicon carbide (SiC) were studied with CH_3SiCl_3 as source materials,
hydrogen as carry gas and argon as dilute gas. All sorts of morphologies were accounted by using the principle of the nuclei-growth of crystals and the theory
of thermodynamics of SiC deposition. The results show that reducing system pressure and increasing deposition temperature are propitious to decrease the maximum energy
for forming SiC nucleus in vapor, and promote forming nucleus. The change of the morphology of SiC deposition can be determined by the change of deposition thermodynamics
of SiC with deposition conditions.
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