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半导体学报(英文版)

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《半导体学报》是中国电子学会和中国科学院半导体研究所主办的学术刊物。它报道半导体物理学、半导体科学技术和相关科学技术领域内最新的科研成果和技术进展,内容包括半导体超晶格和微结构物理,半导体材料物理,包括量子点和量子线等材料在内的新型半导体材料的生长及性质测试,半导体器件物理,新型半导体器件,集成电路的CAD设计和研制,新工艺,半导体光电子器件和光电集成,与半导体器件相关的薄膜生长工艺,性质和应用等等。本刊与物理类期刊和电子类期刊不同,是以半导体和相关材料为中心的,从物理,材料,器件到应用的,从研究到技术开发的,跨越物理和信息两个学科的综合性学术刊物。《半导体学报》被化学文摘(CA),英国科学文摘(SA),俄罗斯文摘杂志(AJ)等数据库收录。   《半导体学报》1980年创刊,2009年改为全英文刊,现为月刊,每期160页左右,国内外公开发行。《半导体学报》主编为李树深院士。国内定价为45元。主要读者对象是从事半导体科学研究、技术开发、生产及相关学科的科技人员、管理人员和大专院校的师生。国内读者可直接到全国各地邮局订阅。

主管:

主办:中国科学院半导体研究所;中国电子学会

主编:李树深

刊期: 月刊 语种: 英文

ISSN:1674-4926CN:11-5781/TN

Email:jos@semi.ac.cn

A readout system for passive pressure sensors

A 72-dB-SNDR rail-to-rail successive approximation ADC using mismatch calibration techniques

Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

A new low-voltage and high-speed sense amplifier for flash memory

Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

Solar light assisted photocatalysis of water using a zinc oxide semiconductor

A feedforward compensation design in critical conduction mode boost power factor correction for low-power low total harmonic distortion

A low power, low noise figure quadrature demodulator for a 60 GHz receiver in 65-nm CMOS technology

A low power CMOS VCO using inductive-biasing with high performance FoM

Deposition and doping of CdS/CdTe thin film solar cells

Enhanced performance of C60 N-type organic field-effect transistors using a pentacene passivation layer

High resolution interface circuit for closed-loop accelerometer

Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

An LDMOS with large SOA and low specific on-resistance

A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic circuit design using genetic algorithms

High performance power-configurable preamplifier in a high-density paralleloptical receiver

Persistent spin currents in a triple-terminal quantum ring with three arms

Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis

A low power mixed signal DC offset calibration circuit for direct conversion receiver applications

A pseudo differential Gm-C complex filter with frequency tuning for IEEE802.15.4 applications

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半导体学报(英文版)

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《半导体学报(英文版)》编委会

Editor-in-Chief
Li Shushen(李树深) Institute of Semiconductors, Chinese Academy of Sciences, China

Executive Associate Editor
Wang Zhiming(王志明) University of Electronic Science and Technology of China, China

Associate Editors
Alexander Govorov Ohio University,USA
Chennupati Jagadish Australian National University,Australia
Li Chuanbo(李传波) Institute of Semiconductors, Chinese Academy of Sciences, China
Niu Xiaobin(牛晓滨) University of Electronic Science and Technology of China, China
Harry E. Ruda University of Toronto, Canada
Wu Nanjian(吴南健) Institute of Semiconductors, Chinese Academy of Sciences, China
David Wei ZHANG(张卫) Fudan University, China
Zhu Junyi(朱骏宜) The Chinese University of Hong Kong, China

Editorial Board
An Xia(安霞) Peking University, China
Ban Shiliang(班士良) Inner Mongolia University, China
Bao Jiming University of Houston, USA
Andres Cantarero University of Valencia, Espana
Chen Shiyou(陈时友) East China Normal University, China
Chen Tao(陈涛) University of Science and Technology of China, China
Cheng Buwen(成步文) Institute of Semiconductors, Chinese Academy of Sciences, China
Chi Baoyong(池保勇) Tsinghua University, China
Yu-Lun Chueh National Tsing Hua University, Taiwan, China
Dai Daoxin(戴道锌) Zhejiang University, China
Fa Dai Auburn University, USA
Dai Lun(戴伦) Peking University, China
Ding Hepeng Massachusetts Institute of Technology, USA
Dong Mingdong Aarhus Universitet, Denmark
Du Maohua Oak Ridge National Laboratory, USA
Kristel Fobelets Imperial College London, UK
Fu Lan The Australian National University, Australia
Gong Min(龚敏) Sichuan University, China
Gong Ming(龚明) University of Science and Technology of China, China
Massimo Gottardi Fondazione Bruno Kessler, Povo (Trento), Italia
Guo Liwei(郭丽伟) Institute of Physics, Chinese Academy of Sciences, China
He Deyan(贺德衍) Lanzhou University, China
He Lei University of California, Los Angeles, USA
He Lixin(何力新) University of Science and Technology of China, China
Hei Yong(黑勇) nstitute of Microelectronics, Chinese Academy of Sciences, China
Hu Hao(胡昊) Xi'an Jiaotong University, China
Huang Bing(黄兵) Beijing Computational Science Research Center, China
Huang Li(黄丽) South University of Science and Technology of China, China
Huang Qing'an(黄庆安) Southeast University, China
Huang Shaoyun(黄少云) Peking University, China
Masayuki Ikebe Hokkaido University, Japan
Jin Zhi(金智) Institute of Microelectronics, Chinese Academy of Sciences, China
Joongoo Kang Daegu Gyeongbuk Institute of Science and Technology, Korea
Li Cheng(李成) Xiamen University, China
Li Dabing(黎大兵) Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China
Li Erping(李尔平) Zhejiang University, China Li Jingbo(李京波) Institute of Semiconductors, Chinese Academy of Sciences, China
Li Jinmin(李晋闽) Institute of Semiconductors, Chinese Academy of Sciences, China
Li Zhenyu(李震宇) University of Science and Technology of China, China
Liang Ziqi(梁子骐) Fudan University, China
Liao Huailin(廖怀林) Peking University, China
Lin Fujiang(林福江) University of Science and Technology of China, China
Lin Yuan(林媛) University of Electronic Science and Technology of China, China
Liu Fengqi(刘峰奇) Institute of Semiconductors, Chinese Academy of Sciences, China
Liu Liyuan(刘力源) Institute of Semiconductors, Chinese Academy of Sciences, China
Liu Xiaoyan(刘晓彦) Peking University, China
Lu Wei(陆卫) Shanghai Institute of Technical Physic, Chinese Academy of Sciences, China
Luo Junwei(骆军委) Institute of Semiconductors, Chinese Academy of Sciences, China
Mei Yongfeng(梅永丰) Fudan University, China
Euclydes Marega Jr. Universidade de São Paulo, Brasil
Mi Zetian McGill University, Canada
Bill Milne University of Cambridge, UK
Hiroshi Mizuta Southampton University, UK
Roberto Morandotti Institut National de la Recherche Scientifique, Canada
Arup Neogi University of North Texas, USA
Shunri Oda Tokyo Institute of Technology, Japan
Pan Anlian(潘安练) Hunan University, China
Antonio Polimeni University of Roma La Sapienza, Italy
Qi Ming(齐鸣) Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
Qian He(钱鹤) Tsinghua University, China
Muhammad Aftab Rafiq Pakistan Institute of Engineering and Applied Sciences, Pakistan
Andrey L Rogach City University of Hong Kong, Hong Kong, China
Michael Scarpulla University of Utah, USA
Shan Chongxin(单崇新) Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China
Shao Zhibiao(邵志标) Xi’an Jiaotong University, China
Shen Guozhen(沈国震) Institute of Semiconductors, Chinese Academy of Sciences, China
Shen Wenzhong(沈文忠) Shanghai Jiao Tong University, China
Richard Shi University of Washington, USA
Shi Xingqiang(石兴强) South University of Science and Technology of China, China
Shu Dajun(舒大军) Nanjing University, China
Stephen Stagon University of North Florida, USA
Sun Nan University of Texas at Austin, USA
Sun Qian(孙钱) Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China
Sun Weifeng(孙伟锋) Southeast University, China
Sun Yichuang University of Hertfordshire, UK
Tan Pingheng(谭平恒) Institute of Semiconductors, Chinese Academy of Sciences, China
Matjaz Valant University of Nova Gorica, Slovenia
Fiorenzo Vetrone Institut National de la Recherche Scientifique, Canada
Wang Donghui(王东辉) Institute of Acoustics, Chinese Academy of Sciences, China
Wang Xiaoliang(王晓亮) Institute of Semiconductors, Chinese Academy of Sciences, China
Wang Xinran(王欣然) Nanjing University, China
Wang Xingjun(王兴军) Peking University, China
Wang Yanan University of Huston, USA
Wang Zhengfei(王征飞) University of Science and Technology of China, China
Wang Zhihua(王志华) Tsinghua University, China
Magnus Willander Linkoping University, Sweden
Xia Jinsong(夏金松) Huazhong University of Science and Technology, China
Xiang Hongjun(向红军) Fudan University, China
Xu Hu(徐虎) South University of Science and Technology of China, China
Xu Jun(许军) Tsinghua University, China
Xue Chunlai(薛春来) Institute of Semiconductors, Chinese Academy of Sciences, China
Yang Haigang(杨海钢) Institute of Electronics, Chinese Academy of Sciences, China
Yang Yang(杨阳) Nanjing Tech University, China
Peter Ye Purdue University, USA
Ye Zhizhen(叶志镇) Zhejiang University, China
Yu Linwei(余林蔚) Nanjing University, China
Yu Pu(于浦) Tsinghua University, China
Yu Zhiyi(虞志益) Sun Yat-Sen University, China
Zeng Xiaoyang( 曾晓洋) Fudan University, China
Zhang Bo(张波) University of Electronic Science and Technology of China, China
Zhang Guoyi(张国义) Peking University, China
Zhang Jianjun(张建军) Institute of Physics, Chinese Academy of Sciences, China
Zhang Kai University of Gottingen, Germany
Zhang Lijun(张立军) Jilin University, China
Zhang Wanrong(张万荣) Beijing University of Technology, China
Zhang Xing(张兴) Peking University, China
Zhang Yanning(张妍宁) Chengdu Science and Technology Development Center of CAEP, China
Zhang Yuming(张玉明) Xidian University, China
Zhao Degang(赵德刚) Institute of Semiconductors, Chinese Academy of Sciences, China
Zhao Yixin(赵一新) Shanghai Jiao Tong University, China
Zhou Shuyun(周树云) Tsinghua University, China
Zhou Yumei(周玉梅) Institute of Microelectronics, Chinese Academy of Sciences, China
Zhu Zhangming(朱樟明) Xidian University
Zhuang Qiandong Lancaster University, UK

Advisory Board
Chen Lianghui(陈良惠) Institute of Semiconductors, Chinese Academy of Sciences, China
Chen Xingbi(陈星弼) University of Electronic Science and Technology of China, China
Fang Jiaxiong(方家熊) Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China
Hao Yue(郝跃) Xidian University, China
Huang Ru(黄如) Peking University, China
Liang Junwu(梁骏吾) Institute of Semiconductors, Chinese Academy of Sciences, China
Liu Ming(刘明) Institute of Microelectronics, Chinese Academy of Sciences, China
Qin Guogang(秦国刚) Peking University, China
Sah Chihtang(薩支唐) Xiamen University, China
Wang Qiming(王启明) Institute of Semiconductors, Chinese Academy of Sciences, China
Wang Shoujue(王守觉) Institute of Semiconductors, Chinese Academy of Sciences, China
Wang Wei(王圩) Institute of Semiconductors, Chinese Academy of Sciences, China
Wang Yangyuan(王阳元) Peking University, China
Wang Zhanguo(王占国) Institute of Semiconductors, Chinese Academy of Sciences, China
Wu Dexin(吴德馨) Institute of Microelectronics, Chinese Academy of Sciences, China
Xia Jianbai(夏建白) Institute of Semiconductors, Chinese Academy of Sciences, China
Xu Ningsheng(许宁生) Fudan University, China
Zheng Houzhi(郑厚植) Institute of Semiconductors, Chinese Academy of Sciences, China
Zheng Youdou(郑有炓) Nanjing University, China
Zhu Bangfen(朱邦芬) Tsinghua University, China

半导体学报(英文版)

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半导体学报(英文版)

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半导体学报(英文版)

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北京市海淀区清华东路甲35号中国科学院半导体研究所

jos@semi.ac.cn

010-82304277

http://www.jos.ac.cn/bdtxbcn/ch/index.aspx

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