{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"A super-flexible single-walled carbon nanotube (SWCNT) transparent conductive film (TCF) was produced based on a combination of electrophoretic deposition (EPD) and hot-pressing transfer. EPD was performed in a diluted SWCNT suspension with high zeta potential prepared by a pre-dispersion-then-dilution procedure using sodium dodecyl sulfate as the surfactant and negative charge supplier. A SWCNT film was deposited on a stainless steel anode surface by direct current electrophoresis and then transferred to a poly(ethylene terephthalate) substrate by hot-pressing to achieve a flexible SWCNT TCF. The SWCNT TCF obtained by this technique can achieve a sheet resistance of 220 Omega/sq with 81% transparency at 550 nm wavelength and a strong adhesion to the substrate. More importantly, no decrease in the conductivity of the SWCNT TCF was detected after 10 000 cycles of repeated bending. The result indicates that the EPD and hot-pressing transfer technique is an effective approach for fabricating a carbon nanotube TCF with excellent flexibility.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"e0fbfc7f-3d99-4240-8c04-834c0876d2c0","issue":"23","journal":{"abbrevTitle":"N","id":"66654f48-4ca7-49de-9d12-ef101b6049ec","issnPpub":"0957-4484","publisherId":"N","title":"Nanotechnology"},"keywords":[{"id":"62b31755-04c7-49b4-a28e-137626bd53ac","keyword":"dispersion;coatings;quality;thin","originalKeyword":"dispersion;coatings;quality;thin"}],"language":"en","publisherId":"0957-4484_2009_23_1","title":"The fabrication of a carbon nanotube transparent conductive film by electrophoretic deposition and hot-pressing transfer","volume":"20","year":"2009"},{"abstractinfo":"Densification behavior of nanocrystalline Mg2Si (n-Mg2Si) with grain size about 30–50 nm was investigated by hot-pressing at 400℃. The results indicated that the densification process of n-Mg2Si exhibited three linear segments: p<0.3 GPa, 0.3 GPa1.2 GPa determined by Heckel formula, among which the third fast increasing segment in high pressure range p>1.2 GPa has seldom been reported in conventional coarse-grained polycrystalline materials. Nevertheless, in the whole pressure range (0.125–1.500 GPa) investigated the densification behavior of n-Mg2Si can be well described by a Kawakita formula p/C=(1/a)p+1/(ab) with constant a=0.452 being in good agreement with the initial porosity of the com","authors":[{"authorName":"Wei XIONG","id":"8cd07817-4514-45cf-b460-ad4c2f375578","originalAuthorName":"Wei XIONG"},{"authorName":" Xiaoying QIN","id":"a97e9cc4-e709-4fb2-b5f3-911969b2f708","originalAuthorName":" Xiaoying QIN"},{"authorName":" Li WANG","id":"c0b07bfb-2be1-4342-b85e-474723d64b6f","originalAuthorName":" Li WANG"}],"categoryName":"|","doi":"","fpage":"595","id":"e700b528-0455-4ecd-a211-a7e774168b64","issue":"5","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"8a70c21e-affa-49a7-99bd-9a3310fdbf79","keyword":"Nanocrystalline Mg2Si","originalKeyword":"Nanocrystalline Mg2Si"},{"id":"bece548b-2586-40f4-89b5-442d66f082c3","keyword":"null","originalKeyword":"null"},{"id":"d8dd4f65-47eb-400c-982d-6706f190efef","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1005-0302_2007_5_8","title":"Densification Behavior of Nanocrystalline Mg2Si Compact in Hot-pressing","volume":"23","year":"2007"},{"abstractinfo":"In-situ 5 vol.pct TiB whiskers and TiC particulates reinforced Ti composites were fabricated by blending Ti powder and B4C particulates followed by reactive hot-pressing. The microstructure of the composites was investigated by using differential scanning calorimetry (DSC), X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM). The results showed that the reactive temperature between Ti and B4C is above 570°. Two kinds of reinforcements with different shapes were formed during hot-pressing: TiB short-fiber and equiaxed TiC particles. The interfacial bonding between the reinforcements and Ti matrix is perfect. No interfacial reaction between reinforcements and Ti matrix was found.","authors":[{"authorName":"Zhenzhu ZHENG","id":"daea2836-5a06-4c79-9238-b6605f23ea32","originalAuthorName":"Zhenzhu ZHENG"},{"authorName":" Lin GENG","id":"d4e66c3a-17fb-4d1c-ba7e-34b38f6c736b","originalAuthorName":" Lin GENG"},{"authorName":" Honglin WANG","id":"48a9f186-aca3-42d6-9b7a-47b546fa460e","originalAuthorName":" Honglin WANG"},{"authorName":" Weimin ZHOU","id":"1493f40a-3e54-44db-9b40-646a33384413","originalAuthorName":" Weimin ZHOU"},{"authorName":" Hongyu XU","id":"0777c65d-919f-476f-a50b-5153659e2176","originalAuthorName":" Hongyu XU"}],"categoryName":"|","doi":"","fpage":"101","id":"d66e4915-7564-4b19-b0df-1aadd21ee780","issue":"Supl.","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"43dea605-a0e4-4f78-8cb9-bb1a911d7aa9","keyword":"Ti matrix composite","originalKeyword":"Ti matrix composite"},{"id":"d3e68e94-c831-4173-9b0f-ec9956b6bd73","keyword":"null","originalKeyword":"null"},{"id":"a61aaf58-44b3-44a4-98e9-96559f37270e","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1005-0302_2003_Supl._48","title":"Microstructure of in-situ Synthesized (TiB+TiC)/Ti Composites Prepared by Hot-pressing","volume":"19","year":"2003"},{"abstractinfo":"Bulk Ti(3)AlC ceramic containing 2.68 wt% TiC was prepared by an in situ reaction/hot-pressing route. The reaction path, microstructure, mechanical and thermal properties were systematically investigated. At room temperature Vickers hardness of Ti(3)AlC ceramic is 7.8 GPa. The flexural strength, compressive strength, and fracture toughness are 182, 708 MPa, and 2.6 MPa center dot m1/2, respectively. Its apparent Young's modulus, shear modulus, bulk modulus and Possion's ratio are 208.9, 83.4, 140.4 GPa, and 0.25 at room temperature. Apparent Young's modulus decreases slowly with the increasing temperature, and at 1210 degrees C the modulus is 170 GPa. The average coefficient of thermal expansion of Ti(3)AlC ceramic is about 10.1 x 10-6 K-1 in the temperature range of 150 degrees-1200 degrees C. Both the molar heat capacity and thermal conductivity increase with an increase in the temperature. At 300 and 1373 K, the molar heat capacities are 87 and 143 center dot J center dot(mol center dot K)-1, while the thermal conductivities are 8.19 and 15.6 W center dot(m center dot K)-1, respectively.","authors":[],"categoryName":"|","doi":"","fpage":"2698","id":"4ea3b36f-8dd7-47dc-a24f-a879abdcb2a1","issue":"11","journal":{"abbrevTitle":"JOTACS","id":"0e2c67d6-98e8-477b-999d-ec8bc9a7c78a","issnPpub":"0002-7820","publisherId":"JOTACS","title":"Journal of the American Ceramic Society"},"keywords":[{"id":"83587f64-3ec6-4250-bb03-d490f2e76ea6","keyword":"ti-al-c;1st-principles calculations;superconducting mgcni3;physical-properties;conductivity;system;ceramics;behavior;phases","originalKeyword":"ti-al-c;1st-principles calculations;superconducting mgcni3;physical-properties;conductivity;system;ceramics;behavior;phases"}],"language":"en","publisherId":"0002-7820_2009_11_2","title":"Mechanical and Thermal Properties of Antiperovskite Ti(3)AlC Prepared by an In Situ Reaction/Hot-Pressing Route","volume":"92","year":"2009"},{"abstractinfo":"Predominantly single-phase Hf(2)[Al(Si)(4)]C(5) ceramic hits been fabricated by an Ill Situ reaction/hot-pressing method using Al. Si and graphite its starting materials Hf(2)[Al(Si)](4)C(5) Shows comparable mechanical properties to Zr(2)[Al(Si)](4)C(5), and lower hardness and stiffness but higher strength and toughness than HfC The stiffness decreases slowly with temperature and at 1600 degrees C it remains 83% of that at ambient temperature Compared to Zr(2)[Al(Si)](4)C(5) and HfC, however, Hf(2)[Al(Si)(4)C(5) exhibits it relatively higher coefficient of thermal expansion,. all intermediate specific heat capacity and it lower thermal conductivity (C) 2009 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved","authors":[],"categoryName":"|","doi":"","fpage":"427","id":"4cf919b2-28b9-42af-89ab-0df3d5b9db2c","issue":"6","journal":{"abbrevTitle":"SM","id":"37a994ff-74c6-4c39-a38b-4d9dcf2c8354","issnPpub":"1359-6462","publisherId":"SM","title":"Scripta Materialia"},"keywords":[{"id":"4a792cf9-24f8-4272-bb69-53ab06e18d02","keyword":"Carbides;Hot-pressing;High temperature;Mechanical property;Thermal;property;crystal-structure;thermoelectric properties;elastic properties;c;ceramics;temperature;oxidation;carbide;composites;hafnium;modulus","originalKeyword":"Carbides;Hot-pressing;High temperature;Mechanical property;Thermal;property;crystal-structure;thermoelectric properties;elastic properties;c;ceramics;temperature;oxidation;carbide;composites;hafnium;modulus"}],"language":"en","publisherId":"1359-6462_2010_6_3","title":"Mechanical and thermal properties of a Hf(2) Al(Si) (4)C(5) ceramic prepared by in situ reaction/hot-pressing","volume":"62","year":"2010"},{"abstractinfo":"Bulk Ta4AlC3 ceramic was prepared by an in situ reaction synthesis/hot-pressing method using Ta, Al, and C powders as the starting materials. The lattice parameter and a new set of X-ray diffraction data were obtained. The physical and mechanical properties of Ta4AlC3 ceramic were investigated. Ta4AlC3 is a good electrical and thermal conductor. The flexural strength and fracture toughness are 372 MPa and 7.7 MPa center dot m(1/2), respectively. Typically, plate-like layered grains contribute to the damage tolerance of Ta4AlC3. After indentation up to a 200 N load, no obvious degradation of the residual flexural strength of Ta4AlC3 was observed, demonstrating the damage tolerance of this ceramic. Even at above 1200 degrees C in air, Ta4AlC3 still retains a high strength and shows excellent thermal shock resistance, which renders it a promising high-temperature structural material.","authors":[],"categoryName":"|","doi":"","fpage":"2542","id":"6ff0e1d1-8aa3-40dd-ac41-233cf124c4cf","issue":"8","journal":{"abbrevTitle":"JOTACS","id":"0e2c67d6-98e8-477b-999d-ec8bc9a7c78a","issnPpub":"0002-7820","publisherId":"JOTACS","title":"Journal of the American Ceramic Society"},"keywords":[{"id":"74ffe0be-ddec-4063-9dbd-3a6e1423bac4","keyword":"thermal-shock behavior;electrical-properties;contact damage;ti3sic2;ti4aln3;ti3alc2;ti2alc;microstructure;composites;system","originalKeyword":"thermal-shock behavior;electrical-properties;contact damage;ti3sic2;ti4aln3;ti3alc2;ti2alc;microstructure;composites;system"}],"language":"en","publisherId":"0002-7820_2007_8_1","title":"Physical and mechanical properties of bulk Ta(4)AIC(3) ceramic prepared by an in situ reaction Synthesis/Hot-Pressing method","volume":"90","year":"2007"},{"abstractinfo":"Nearly single-phase and polycrystalline charge-density-wave compound K0.3MoO3 have been prepared by using a simple method. In this work, K2CO3 and Mo03 were used as starting materials and reacted by hot isostatic pressing (HIP) sintering. The product is nearly single phase K0.3MoO3 determined by X-ray powder diffraction (XRD) and energy dispersive spectroscopy (EDS). Measurement of temperature dependence of resistivity reveals that the transport property of polycrystalline K0.3MoO3 obviously differs from that of single crystal due to the grain boundaries and the anisotropic structure in this kind of compound.","authors":[],"categoryName":"|","doi":"","fpage":"633","id":"b3e1f976-7ef4-47e6-b35b-0d68ee817e48","issue":"5","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"4e6b7664-ed2d-43b4-8ad4-3bbb45e70b35","keyword":"blue bronze K0.3MoO3;charge-density-wave;polycrystalline;hot;isostatic pressing;molybdenum oxide bronzes;blue bronze;film growth;rb0.30moo3;potassium;k0.30moo3;transport;noise","originalKeyword":"blue bronze K0.3MoO3;charge-density-wave;polycrystalline;hot;isostatic pressing;molybdenum oxide bronzes;blue bronze;film growth;rb0.30moo3;potassium;k0.30moo3;transport;noise"}],"language":"en","publisherId":"1005-0302_2007_5_4","title":"Preparation of polycrystalline singe-phase K0.3MoO3 by hot isostatic pressing sintering","volume":"23","year":"2007"},{"abstractinfo":"Nearly single-phase and polycrystalline charge-density-wave compound K0:3MoO3 have been prepared by using a simple method. In this work, K2CO3 and MoO3 were used as starting materials and reacted by hot isostatic pressing (HIP) sintering. The product is nearly single phase K0:3MoO3 determined by X-ray powder diffraction (XRD) and energy dispersive spectroscopy (EDS). Measurement of temperature dependence of resistivity reveals that the transport property of polycrystalline K0:3MoO3 obviously differs from that of single crystal due to the grain boundaries and the anisotropic structure in this kind of compound.","authors":[{"authorName":"Junfeng WANG","id":"0fa1a4b3-1f0e-4583-af4c-00c067ebc5ff","originalAuthorName":"Junfeng WANG"},{"authorName":" Rui XIONG","id":"937a1c59-c21b-4eb4-8a1d-cb7bfa89bac0","originalAuthorName":" Rui XIONG"},{"authorName":" Ning SHU","id":"ed38339b-3bac-40dd-a8a0-50d20594997d","originalAuthorName":" Ning SHU"},{"authorName":" Jing SHI","id":"1cb4d5e5-b01d-4e93-b5ad-e79a4e736004","originalAuthorName":" Jing SHI"},{"authorName":" Zhengzhong JIN","id":"726e9aa0-a259-48b5-9801-7da14bb72fff","originalAuthorName":" Zhengzhong JIN"}],"categoryName":"|","doi":"","fpage":"633","id":"7b99eb58-eb26-4350-89be-633212e3c499","issue":"5","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"9240cd14-0b4e-42ec-9d1f-75433e5e82c2","keyword":"Blue bronze K0:3MoO3","originalKeyword":"Blue bronze K0:3MoO3"},{"id":"e367fd04-a5a6-40d2-b4f5-9a490989c149","keyword":"null","originalKeyword":"null"},{"id":"54f8cf50-da53-456d-b14c-4ca74610c4b6","keyword":"null","originalKeyword":"null"},{"id":"efce9e78-c458-459f-8cc5-332097bbeb7d","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1005-0302_2007_5_10","title":"Preparation of Polycrystalline Singe-phase K0:3MoO3 by Hot Isostatic Pressing Sintering","volume":"23","year":"2007"},{"abstractinfo":"The microstructure, mechanical and thermal properties. as well as oxidation behavior, of in situ hot-pressed Zr(2)[Al(Si)](4)C(5)-30 vol % SiC composite have been characterized The microstructure is composed of elongated Zr(2)[Al(Si)](4)C(5) grains and embedded SiC particles The composite shows superior hardness (Vickers hardness of 16 4 GPa), stiffness (Young's modulus of 386 GPa), strength (bending strength of 353 MPa), and toughness (fracture toughness of 6.62 MPa m(1/2)) compared to a monolithic Zr(2)[Al(Si)](4)C(5) ceramic Stiffness is maintained up to 1600 degrees C (323 GPa) due to clean grain boundaries with no glassy phase The composite also exhibits higher specific heat capacity and thermal conductivity as well as better oxidation resistance compared to Zr(2)[Al(Si)](4)C(5) (C) 2010 Elsevier Ltd. All rights reserved","authors":[],"categoryName":"|","doi":"","fpage":"2147","id":"c8145c50-05b3-47ca-b115-2f8a7caf1588","issue":"11","journal":{"abbrevTitle":"JOTECS","id":"3dcf7e6d-f543-4d34-9446-df2add7ed496","issnPpub":"0955-2219","publisherId":"JOTECS","title":"Journal of the European Ceramic Society"},"keywords":[{"id":"d5e036e0-7c0f-4b5a-88be-2e2c1212d9d7","keyword":"Carbides;Microstructure;Mechanical properties;Thermal properties;Corrosion;high-temperature;ti3si(al)c-2/sic composites;fracture-toughness;internal-friction;silicon-carbide;c ceramics;zr2al3c4;additives;strength;aluminum","originalKeyword":"Carbides;Microstructure;Mechanical properties;Thermal properties;Corrosion;high-temperature;ti3si(al)c-2/sic composites;fracture-toughness;internal-friction;silicon-carbide;c ceramics;zr2al3c4;additives;strength;aluminum"}],"language":"en","publisherId":"0955-2219_2010_11_1","title":"Microstructure, mechanical, thermal, and oxidation properties of a Zr(2) Al(Si) (4)C(5)-SiC composite prepared by in situ reaction/hot-pressing","volume":"30","year":"2010"},{"abstractinfo":"","authors":[{"authorName":"","id":"806b6e07-9d14-4ff3-bffe-7bc5e250d7a9","originalAuthorName":""},{"authorName":"","id":"2f782ff7-4f19-44d4-a5e0-7c60aef197f0","originalAuthorName":""},{"authorName":"","id":"72cfe220-e800-462b-91a4-06dcb6aed8be","originalAuthorName":""},{"authorName":"","id":"e58755be-7cbf-4e95-a304-ec69782ecc11","originalAuthorName":""}],"doi":"","fpage":"4","id":"13b7de44-8f3d-4792-9d7c-1450af85225a","issue":"2","journal":{"abbrevTitle":"WHLGDXXBCLKXBYWB","coverImgSrc":"journal/img/cover/20081008102608458.jpg","id":"63","issnPpub":"1000-2413","publisherId":"WHLGDXXBCLKXBYWB","title":"武汉理工大学学报-材料科学版(英文版)"},"keywords":[{"id":"a32c9b9a-5c97-42f9-87c8-dd4ce17f0435","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"whgydxxb-e200502002","title":"Gradient Structure of Ti-Al-C Ternary Carbide Prepared by Hot-pressing Sintering","volume":"20","year":"2005"}],"totalpage":180,"totalrecord":1799}