{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"用射频磁控<span style=\"color:red\">溅射</span>法在SrTiO3衬底上外延生长PLZT薄膜,研究了不同的<span style=\"color:red\">溅射</span>工艺对薄膜生长速率的影响,探讨了不同的后期热处理<span style=\"color:red\">条件</span>与薄膜取向度的关系.在SrTiO3衬底上成功制备出外延生长的、厚度达1.5μm的PLZT薄膜.","authors":[{"authorName":"仇萍荪","id":"c65d4960-1f96-488f-8cde-dda2699b21d3","originalAuthorName":"仇萍荪"},{"authorName":"程文秀","id":"6b2be779-29b0-456b-8f01-3177909d8b72","originalAuthorName":"程文秀"},{"authorName":"何夕云","id":"3fe7953e-205f-4e02-9c07-7c53511b4341","originalAuthorName":"何夕云"},{"authorName":"郑鑫森","id":"8bf03659-4125-4f90-aabd-0c415b12a420","originalAuthorName":"郑鑫森"},{"authorName":"丁爱丽","id":"1be3532d-0dce-46db-8b6e-0f0aa335160d","originalAuthorName":"丁爱丽"}],"doi":"","fpage":"1142","id":"76598cdf-e043-4f3e-8043-5f3c0013a15d","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b982eb65-9fa5-4a1b-8673-8b8eddc18e9e","keyword":"SrTiO3衬底","originalKeyword":"SrTiO3衬底"},{"id":"dab08cf1-4b1c-4933-9096-a3e93309709b","keyword":"PLZT膜","originalKeyword":"PLZT膜"},{"id":"c897f085-f0c4-41f0-8cc1-4db3fc80c577","keyword":"<span style=\"color:red\">溅射</span><span style=\"color:red\">条件</span>","originalKeyword":"溅射条件"},{"id":"3c4579a5-044c-4bf2-aba5-974cadd1f262","keyword":"外延生长","originalKeyword":"外延生长"}],"language":"zh","publisherId":"gncl2004z1320","title":"SrTiO3衬底上<span style=\"color:red\">溅射</span>法外延生长PLZT薄膜","volume":"35","year":"2004"},{"abstractinfo":"在实际磁光盘生产线上大都使用合金<span style=\"color:red\">溅射</span>靶<span style=\"color:red\">溅射</span>记录介质膜,而尚未有直接使用合金靶研究这些关系的报道.我们首先研制了用于磁光<span style=\"color:red\">溅射</span>的系列合金靶,并完善了靶材制造工艺参数,且在此基础上进行了成分以及<span style=\"color:red\">溅射</span>参数对各种磁光性能影响的研究.首先确定了各种<span style=\"color:red\">溅射</span>功率和N2-Ar气流量下Al、Si以及Tb-Fe-Co(Mo)的<span style=\"color:red\">溅射</span>速率,在此基础上通过改变<span style=\"color:red\">溅射</span>功率和调整气流量改变SiN的成分和厚度.在各种功率和气流量下<span style=\"color:red\">溅射</span>了Mo膜,并测定了这些磁光膜的Kerr回线以获得Kerr转角等性能,从而探讨了<span style=\"color:red\">溅射</span>工艺<span style=\"color:red\">条件</span>对Kerr的影响.\n","authors":[{"authorName":"张喜燕","id":"386aa548-d947-416a-a141-10e45a292812","originalAuthorName":"张喜燕"},{"authorName":"刘志农","id":"69122efd-7d70-4903-b62a-7bccef671ff5","originalAuthorName":"刘志农"},{"authorName":"陈志武","id":"4af428c7-c978-42f2-9317-ac70ca8ef4d8","originalAuthorName":"陈志武"}],"doi":"","fpage":"334","id":"8d96db1b-a1c7-4847-97ca-f9e697d98952","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"e2db3174-b8bb-4ff2-977b-b6a6fa7abfd6","keyword":"磁光盘","originalKeyword":"磁光盘"},{"id":"45396028-1a89-4dbd-8c2d-b927dc6c1a85","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"85fbef1c-f687-4013-9eaa-2db793350645","keyword":"磁光材料","originalKeyword":"磁光材料"}],"language":"zh","publisherId":"gncl200103045","title":"Tb-Fe-Co磁光薄膜<span style=\"color:red\">溅射</span><span style=\"color:red\">条件</span>对Kerr转角的影响","volume":"32","year":"2001"},{"abstractinfo":"研究了采用直流磁控<span style=\"color:red\">溅射</span>法制备ITO透明导电膜时温度、靶材、氧压比、<span style=\"color:red\">溅射</span>气压、 <span style=\"color:red\">溅射</span>速率等工艺<span style=\"color:red\">条件</span>对ITO膜电阻率和可见光透过率等光电特性的影响.实验结果表明,用ITO陶瓷靶<span style=\"color:red\">溅射</span>镀膜要比In-Sn合金靶好,特别是在电阻率上,前者要低一个数量级左右;并由实验结果得到,当温度330 ℃,氧氩比1/40,<span style=\"color:red\">溅射</span>气压0.45 Pa和<span style=\"color:red\">溅射</span>速率23 nm·min-1左右时,可获得薄膜电阻率1.8×10-4 Ω·cm,可见光透过率80%以上的最佳光电特性参数.","authors":[{"authorName":"辛荣生","id":"4bcb1950-8504-4ed8-b1b6-7dde56dee707","originalAuthorName":"辛荣生"},{"authorName":"林钰","id":"0c75d898-2a99-472d-afd6-3dc0628b66e1","originalAuthorName":"林钰"}],"doi":"10.3969/j.issn.0258-7076.2005.06.026","fpage":"931","id":"78c96100-89fe-43d4-b68f-100fefb8d9f9","issue":"6","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"d2b1e179-b60e-44da-b43e-c17249ef2233","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"},{"id":"51fb8c12-b5c0-4534-97a6-3fc99a83ebdd","keyword":"ITO膜","originalKeyword":"ITO膜"},{"id":"c1b96416-a98b-4d72-9a2e-dd7de803f315","keyword":"电阻率","originalKeyword":"电阻率"},{"id":"984bebbc-5e25-4412-bbef-13e26848808e","keyword":"透光率","originalKeyword":"透光率"}],"language":"zh","publisherId":"xyjs200506026","title":"工艺<span style=\"color:red\">条件</span>对直流磁控<span style=\"color:red\">溅射</span>沉积ITO薄膜光电特性的影响","volume":"29","year":"2005"},{"abstractinfo":"在SmCo/Cr薄膜中,Cr底层的取向结构对薄膜的磁学性能有很大的影响.设计了4因素3水平的正交实验L9(34),并通过数理统计的方法分析了Cr底层的<span style=\"color:red\">溅射</span>参数对SmCo/Cr薄膜矫顽力的影响.用较少的实验得到Cr底层的最佳实验<span style=\"color:red\">条件</span>:靶基距为4 cm,功率为50 W,<span style=\"color:red\">溅射</span>气压为0.5 Pa,<span style=\"color:red\">溅射</span>时间为9 min.并发现了靶基距、功率和<span style=\"color:red\">溅射</span>气压对薄膜矫顽力的影响较大,其中靶基距是薄膜矫顽力最主要的控制因素.而<span style=\"color:red\">溅射</span>时间在所取的水平上对薄膜矫顽力的影响最小.本实验设计可达到95%的置信度.","authors":[{"authorName":"许小红","id":"297b0f79-3591-4825-babf-49a1bac4b2dd","originalAuthorName":"许小红"},{"authorName":"段静芳","id":"fe1eb063-55a6-4e53-8ad5-d12bc3f96a39","originalAuthorName":"段静芳"},{"authorName":"王芳","id":"ddfdbae7-bef3-48b3-afb8-6a7aa651b43a","originalAuthorName":"王芳"},{"authorName":"武海顺","id":"811b5a63-facc-4bbf-821c-b1f34ce5b31f","originalAuthorName":"武海顺"},{"authorName":"李震","id":"f9cba4ee-4518-435b-b2fe-8f76cbc7afc2","originalAuthorName":"李震"},{"authorName":"李佐宜","id":"c6fccb49-924f-458b-afc8-8bd3f79e6828","originalAuthorName":"李佐宜"}],"doi":"","fpage":"1033","id":"16ea5055-c255-4836-9dd7-e8451f6ddb4a","issue":"10","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"fd1c8b9c-5810-4a2d-a0cd-5f7352e13ad1","keyword":"SmCo/Cr薄膜","originalKeyword":"SmCo/Cr薄膜"},{"id":"16137686-e094-4868-b177-85bc0a512d15","keyword":"矫顽力","originalKeyword":"矫顽力"},{"id":"43222285-74b6-400c-adee-bb658223215c","keyword":"Cr底层","originalKeyword":"Cr底层"},{"id":"b721e4a6-2002-4a9a-b5b4-602fa992f474","keyword":"<span style=\"color:red\">溅射</span>参数","originalKeyword":"溅射参数"}],"language":"zh","publisherId":"xyjsclygc200410006","title":"SmCo/Cr薄膜中Cr底层最佳<span style=\"color:red\">溅射</span><span style=\"color:red\">条件</span>的正交设计研究","volume":"33","year":"2004"},{"abstractinfo":"采用RF反应<span style=\"color:red\">溅射</span>法在Si(111)、玻璃衬底上制备了具有良好C轴取向的多晶ZnO薄膜.用XRD分析了沉积<span style=\"color:red\">条件</span>(衬底温度、工作气体中的氧与氩气压比和衬底种类)对样品结构的影响.发现(1)薄膜的取向性随着衬底温度的升高而增强,超过400℃后薄膜质量开始变差;(2)工作气体中氧与氩气压比(PO2/PAr)为2:3时,薄膜取向性最好;(3)薄膜晶粒尺寸11～34nm,相同沉积<span style=\"color:red\">条件</span>下,单晶硅衬底样品(002)衍射峰强度减弱,半高宽无明显变化.","authors":[{"authorName":"龚恒翔","id":"cde120c3-5d93-4899-9c0f-ba93e5b5b1dd","originalAuthorName":"龚恒翔"},{"authorName":"阎志军","id":"5a96df73-3334-4fe5-8a73-8e66d9bdad8c","originalAuthorName":"阎志军"},{"authorName":"杨映虎","id":"b2ee5c31-59f2-410b-972c-c2162ea20f98","originalAuthorName":"杨映虎"},{"authorName":"王印月","id":"37183cab-76fd-4053-974e-391ce2c5d0a3","originalAuthorName":"王印月"}],"doi":"10.3969/j.issn.1007-4252.2000.04.033","fpage":"428","id":"4b093519-1854-4265-8ca8-7ce52aadd331","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"12177a87-0d90-4902-bf33-dad972680ed9","keyword":"ZnO薄膜","originalKeyword":"ZnO薄膜"},{"id":"46571c28-4c1c-4577-8556-ae947b42a7dc","keyword":"RF反应<span style=\"color:red\">溅射</span>","originalKeyword":"RF反应溅射"},{"id":"25a26f5f-655c-4745-94d1-bb59093ac968","keyword":"择优取向","originalKeyword":"择优取向"}],"language":"zh","publisherId":"gnclyqjxb200004033","title":"沉积<span style=\"color:red\">条件</span>对RF反应<span style=\"color:red\">溅射</span>多晶ZnO薄膜结构的影响","volume":"6","year":"2000"},{"abstractinfo":"通过直流<span style=\"color:red\">溅射</span>沉积法在玻璃衬底上制备了不同生长<span style=\"color:red\">条件</span>下的纳米金薄膜,利用X射线衍射(XRD)和原子力显微镜(AFM)对其进行表面形貌分析.XRD 图显示Au膜具有(111)面择优取向;AFM图显示,在不同的生长阶段Au膜具有不同的表面微结构.总结了不同的工艺<span style=\"color:red\">条件</span>对薄膜晶粒生长的影响,这项研究对实现金属薄膜的可控性生长有重要意义.","authors":[{"authorName":"许小亮","id":"0da8a732-3861-4d92-90fd-488f2d688c77","originalAuthorName":"许小亮"},{"authorName":"王烨","id":"24cab278-3e67-475c-87a9-fa2b601e6df8","originalAuthorName":"王烨"},{"authorName":"赵亚丽","id":"84e1e9c9-691b-40c3-969f-550703941811","originalAuthorName":"赵亚丽"},{"authorName":"牟威圩","id":"f35c824f-085a-4024-9e95-14b9f15a3052","originalAuthorName":"牟威圩"},{"authorName":"施朝淑","id":"be3ffef9-f3dd-4868-9465-409466b6b3b6","originalAuthorName":"施朝淑"}],"doi":"","fpage":"1216","id":"66ab1637-1cc9-4c72-8667-8417f54656ad","issue":"8","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"4aed03e3-fddf-4df4-a0b2-2cad1ecef6ea","keyword":"晶粒生长","originalKeyword":"晶粒生长"},{"id":"1bf76d9c-aa31-4787-bf8f-12cae479dd33","keyword":"纳米金","originalKeyword":"纳米金"},{"id":"7472c7b2-3ce0-4253-9a02-dd3ba015bc1c","keyword":"表面形貌","originalKeyword":"表面形貌"},{"id":"0031d596-02eb-4bb9-ae0c-5c5521a8d96e","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"}],"language":"zh","publisherId":"gncl200608010","title":"磁控<span style=\"color:red\">溅射</span>法制备的纳米金薄膜的工艺<span style=\"color:red\">条件</span>和结构分析","volume":"37","year":"2006"},{"abstractinfo":"采用射频磁控<span style=\"color:red\">溅射</span>法在玻璃基片上成功制得了TbFeCo/Pt非晶垂直磁化膜,系统研究了<span style=\"color:red\">溅射</span>工艺参数对TbFeCo薄膜磁性能的影响.振动样品磁强计测量结果表明:Tb含量在补偿成分点附近,采用较低的<span style=\"color:red\">溅射</span>氩气压与Pt底层,有利于提高TbFeCo薄膜的磁性能;当Tb含量为0.24,<span style=\"color:red\">溅射</span>功率为300W,<span style=\"color:red\">溅射</span>气压为0.53Pa,薄膜厚度为140nm时,TbFeCo/Pt薄膜矫顽力达到476kA/m,饱和磁化强度为151kA/m,剩磁矩形比超过0.8,该薄膜有望用作高密度光磁混合记录介质.","authors":[{"authorName":"程伟明","id":"d0805828-7540-48f2-895f-c41a8ce23967","originalAuthorName":"程伟明"},{"authorName":"李佐宜","id":"148cdb9c-512d-4ead-bc55-b8b6434c7962","originalAuthorName":"李佐宜"},{"authorName":"胡珊","id":"8fa50bb5-c233-47f6-9a9c-f15521f38503","originalAuthorName":"胡珊"},{"authorName":"杨晓非","id":"f7273005-c6fc-4d0a-8700-447363b49f52","originalAuthorName":"杨晓非"},{"authorName":"董凯锋","id":"864268f0-9203-4ccf-ae7f-f0d3105ab135","originalAuthorName":"董凯锋"},{"authorName":"林更琪","id":"53631502-ebce-49b8-92fa-f82c50da697a","originalAuthorName":"林更琪"}],"doi":"","fpage":"1431","id":"09eadb14-1ef8-4d7c-877f-67d5e7230f0e","issue":"9","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"0193c57f-2e38-446b-a03a-49a7cfe2dd24","keyword":"射频磁控<span style=\"color:red\">溅射</span>","originalKeyword":"射频磁控溅射"},{"id":"f82711d9-7ffc-4873-bee5-7606491df8f4","keyword":"非晶垂直磁化膜","originalKeyword":"非晶垂直磁化膜"},{"id":"05acbd95-f13e-418b-8e2b-f14c724b44d7","keyword":"矫顽力","originalKeyword":"矫顽力"},{"id":"ee5a4b1b-d755-461f-ad92-be33acc05448","keyword":"饱和磁化强度","originalKeyword":"饱和磁化强度"},{"id":"15023d74-a6cd-4375-875c-e0e2ed7e2185","keyword":"光磁混合记录","originalKeyword":"光磁混合记录"}],"language":"zh","publisherId":"gncl200709011","title":"<span style=\"color:red\">溅射</span>工艺<span style=\"color:red\">条件</span>对TbFeCo/Pt薄膜磁性能的影响","volume":"38","year":"2007"},{"abstractinfo":"采用高致密度靶材在室温<span style=\"color:red\">条件</span>下玻璃衬底上 RF 磁控<span style=\"color:red\">溅射</span>制备铝掺杂氧化锌(AZO)薄膜。用 X 射线衍射仪、冷场发射扫描电子显微镜、紫外可见光分光光度计、四探针测试仪和霍尔测试仪分析表征薄膜的显微组织、表面形貌和光电学性能。结果表明，所制备的薄膜均为多晶六方纤锌矿结构，<span style=\"color:red\">溅射</span>功率对 AZO 薄膜的光电学性能，尤其是电学性能有重要影响。不同<span style=\"color:red\">溅射</span>功率下薄膜可见光平均透过率均大于85%，当<span style=\"color:red\">溅射</span>功率为200 W 时，获得最小电阻率4.5×10?4Ω·cm 和87.1%的透过率。AZO 薄膜禁带宽度随<span style=\"color:red\">溅射</span>功率不同在3.48~3.68 eV 范围内变化。","authors":[{"authorName":"孙宜华","id":"be60a658-e56f-4167-a1bd-cec1e2b18af9","originalAuthorName":"孙宜华"},{"authorName":"王海林","id":"d4cc8784-6563-46d7-bce1-5942a6ce4431","originalAuthorName":"王海林"},{"authorName":"陈剑","id":"4d545b8c-2186-40a2-a60e-eca5a37397b5","originalAuthorName":"陈剑"},{"authorName":"方亮","id":"7b39955f-2293-4689-99fa-4feb06c89c68","originalAuthorName":"方亮"},{"authorName":"王磊","id":"c3ed2a71-0409-4b38-8a45-8f73a09f7843","originalAuthorName":"王磊"}],"doi":"10.1016/S1003-6326(16)64275-9","fpage":"1655","id":"a1ed1841-e941-43a5-a796-58d7cf1cecfc","issue":"6","journal":{"abbrevTitle":"ZGYSJSXBEN","coverImgSrc":"journal/img/cover/ZGYSJSXBEN.jpg","id":"757390d2-7d95-4517-96f1-e467ce1bff63","issnPpub":"1003-6326","publisherId":"ZGYSJSXBEN","title":"中国有色金属学报(英文版)"},"keywords":[{"id":"f298a737-7664-4e0e-a332-ddb06883ca9e","keyword":"AZO薄膜","originalKeyword":"AZO薄膜"},{"id":"0ead781a-9069-4484-b552-e3e38c4cbc33","keyword":"显微组织","originalKeyword":"显微组织"},{"id":"4270ea20-ec2d-46a4-8c82-4c744675c1bc","keyword":"光电学性能","originalKeyword":"光电学性能"},{"id":"1bde88b5-8718-4007-b592-c580d2471dab","keyword":"RF磁控<span style=\"color:red\">溅射</span>","originalKeyword":"RF磁控溅射"}],"language":"zh","publisherId":"zgysjsxb-e201606022","title":"室温<span style=\"color:red\">条件</span>下射频磁控<span style=\"color:red\">溅射</span>法制备AZO 薄膜的结构与光电性能","volume":"26","year":"2016"},{"abstractinfo":"薄膜厚度均匀性是衡量薄膜质量和镀膜装置性能的一项重要指标.在自行设计的磁控<span style=\"color:red\">溅射</span>沉积设备上,对薄膜沉积工艺中靶基间距、<span style=\"color:red\">溅射</span>功率、工作气压对膜厚均匀性的影响进行了研究,由连续光谱椭圆偏光仪SE800测量薄膜厚度.结果表明:靶基间距较大的情况下,薄膜均匀性明显改善;<span style=\"color:red\">溅射</span>功率和工作气压对薄膜均匀性也有较大的影响.","authors":[{"authorName":"温培刚","id":"6f1e0957-fd55-4720-b883-6871a4e05096","originalAuthorName":"温培刚"},{"authorName":"颜悦","id":"cc3dd1a4-0268-4442-ae33-f0bb06624de0","originalAuthorName":"颜悦"},{"authorName":"张官理","id":"89e2b482-23e4-455f-abae-9a4b3c5e88c6","originalAuthorName":"张官理"},{"authorName":"望咏林","id":"3012f331-dd50-4a64-9471-bc795e7dd659","originalAuthorName":"望咏林"}],"doi":"10.3969/j.issn.1005-5053.2007.03.014","fpage":"66","id":"31564c0f-fcfb-4af1-90fe-35e9eca84733","issue":"3","journal":{"abbrevTitle":"HKCLXB","coverImgSrc":"journal/img/cover/HKCLXB.jpg","id":"41","issnPpub":"1005-5053","publisherId":"HKCLXB","title":"航空材料学报"},"keywords":[{"id":"dc47d748-61cd-487e-a77a-d36b38215905","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"},{"id":"a6860a3a-40da-4314-8d13-d78b392cb518","keyword":"膜厚均匀性","originalKeyword":"膜厚均匀性"},{"id":"4f2e1a2b-b130-4b77-8efd-c3127a564a17","keyword":"膜厚测量","originalKeyword":"膜厚测量"}],"language":"zh","publisherId":"hkclxb200703014","title":"磁控<span style=\"color:red\">溅射</span>沉积工艺<span style=\"color:red\">条件</span>对薄膜厚度均匀性的影响","volume":"27","year":"2007"},{"abstractinfo":"为进一步了解工艺参数对<span style=\"color:red\">溅射</span>膜沉积的影响,开展了不同工作气体压强、不同<span style=\"color:red\">溅射</span>功率和有无负偏压<span style=\"color:red\">条件</span>下的Zr、Cu、Ni单金属<span style=\"color:red\">溅射</span>膜和Zr-Cu、Zr-Ni二元合金<span style=\"color:red\">溅射</span>膜的<span style=\"color:red\">溅射</span>沉积实验.使用称重法,分析了<span style=\"color:red\">溅射</span>膜沉积量随工作气体压强、<span style=\"color:red\">溅射</span>功率的变化规律;通过分层<span style=\"color:red\">溅射</span>和共溅工艺实验,对比了相同<span style=\"color:red\">溅射</span>功率下Zr与Cu、Zr与Ni元素间分层<span style=\"color:red\">溅射</span>膜和共溅膜的沉积量;采用扫描电子显微镜,分析、研究了<span style=\"color:red\">溅射</span>过程中负偏压对Cu<span style=\"color:red\">溅射</span>膜膜层生长方式的影响.结果表明,由于工作气体压强对电子与气体分子以及对靶材原子与气体分子碰撞几率的影响,使得膜层的沉积量不是随着工作气体压强的升高单纯地呈下降趋势,而是有一最佳压强范围;随着<span style=\"color:red\">溅射</span>功率的增大,膜层沉积量增加,在<span style=\"color:red\">溅射</span>功率相等的<span style=\"color:red\">条件</span>下,由于辉光放电电场叠加增大了工作气体的离化率,使得共溅膜比分层<span style=\"color:red\">溅射</span>膜的沉积量大得多;<span style=\"color:red\">溅射</span>过程中施加较高负偏压可以抑制柱状结构生长,细化晶粒,提高膜层致密度.","authors":[{"authorName":"李海凤","id":"024e446c-10ad-4792-82d9-874e82dadf6e","originalAuthorName":"李海凤"},{"authorName":"牛玉超","id":"45e5d24f-c8d5-4eeb-a668-4ce7f58983dd","originalAuthorName":"牛玉超"},{"authorName":"苏超","id":"97aa188d-b9e6-4500-b139-816cf70507b2","originalAuthorName":"苏超"},{"authorName":"王志刚","id":"0a03829c-a7a0-451d-aa24-025441b90dcd","originalAuthorName":"王志刚"},{"authorName":"陈莎莎","id":"8a15427c-dd85-4730-ba01-0877be9a6eec","originalAuthorName":"陈莎莎"},{"authorName":"孙希刚","id":"f2236ebe-c40f-4f19-aee8-10bb77cb16f1","originalAuthorName":"孙希刚"}],"doi":"10.3969/j.issn.1001-3660.2009.05.025","fpage":"67","id":"1ac40e72-d444-4d51-a62f-e2263d0b5c88","issue":"5","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"0034ed92-b0e5-4547-be0d-b27eadab0f4f","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"},{"id":"18bfcdd8-bc02-40f3-8977-cc52387e830a","keyword":"工作气体压强","originalKeyword":"工作气体压强"},{"id":"149423e4-eeb6-4043-adfe-856632e783f5","keyword":"<span style=\"color:red\">溅射</span>功率","originalKeyword":"溅射功率"},{"id":"6ef9fe2a-d241-4ef4-b059-1a3d25f034c9","keyword":"沉积量","originalKeyword":"沉积量"},{"id":"04a07ecd-cd36-41c5-b576-4966e46c0be0","keyword":"负偏压","originalKeyword":"负偏压"}],"language":"zh","publisherId":"bmjs200905025","title":"工艺参数对直流磁控<span style=\"color:red\">溅射</span>膜沉积的影响","volume":"38","year":"2009"}],"totalpage":3766,"totalrecord":37653}