{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"全球电子封装行业的无铅化趋势,使得镀层锡晶须自发生长的问题变得十分突出.由于晶须的导电性可以引起高密度封装引脚之间短路,从而使电子产品失效甚至引发灾难性的事故,因此研究并阐明锡晶须生长机理、探索有效抑制锡晶须生长的手段、寻找合适的锡品须生长加速实验方法评估电子产品的可靠性,成为当前亟需解决的问题.本文从锡晶须问题的由来,锡晶须的危害、锡晶须生长的机理、影响锡晶须生长的因素、抑制锡晶须生长的方法和锡品须生长加速实验方法等几个方面,对锡晶须问题尤其是近年来这方面的研究进展作一简要评述,并提出一些需要研究的课题.","authors":[{"authorName":"刘萌","id":"bb174719-22a5-4a1f-8fb9-0786e5e955e9","originalAuthorName":"刘萌"},{"authorName":"冼爱平","id":"985ec54e-f37f-41b8-8507-8e4fbbb7acfd","originalAuthorName":"冼爱平"}],"doi":"","fpage":"314","id":"d93d6c2b-870d-4fdf-9ce9-3376919bdad1","issue":"2","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"65c21725-f658-4e42-9c72-947ebbfbfcf1","keyword":"电镀","originalKeyword":"电镀"},{"id":"424d1bf1-77ad-4a2e-a90a-05ba75d7c737","keyword":"锡晶须","originalKeyword":"锡晶须"},{"id":"2458c222-ed05-435b-be44-e59e3d845e05","keyword":"生长机理","originalKeyword":"生长机理"},{"id":"7a1503c3-6c18-49f5-b4c7-1923907440e6","keyword":"无铅焊料","originalKeyword":"无铅焊料"},{"id":"76ab10b0-d14e-4791-ad75-99d2ab3ce114","keyword":"综述","originalKeyword":"综述"}],"language":"zh","publisherId":"clkxygc200902040","title":"无铅镀层锡晶须问题的研究进展","volume":"27","year":"2009"},{"abstractinfo":"随着电子封装无铅化的趋势,选择无铅锡基镀层已成为必然.但是,纯锡及锡基合金镀层具有自发生长锡晶须的倾向,因此研究并阐明锡晶须的生长机理,并采取有效的预防措施,成为目前人们关注的焦点.回顾了锡晶须研究的历史和现状,综述了关于锡晶须的形貌特征、影响锡晶须生长的各种因素及目前对锡晶须生长机理的认识等问题,介绍并分析了几种工业界预防锡晶须生长的主要措施,包括合金化、去应力退火、电镀隔离层、热风整平或热熔.讨论并提出了一些需要研究的课题.","authors":[{"authorName":"江波","id":"e819f5c6-1c5d-47dc-8eff-7ae24a4834f0","originalAuthorName":"江波"},{"authorName":"冼爱平","id":"c8010a88-a5dc-4e25-a118-3b7892a90bff","originalAuthorName":"冼爱平"}],"doi":"10.3969/j.issn.1001-3660.2006.04.001","fpage":"1","id":"34d008e5-a14e-4f59-9172-f458e8a3d0e0","issue":"4","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术 "},"keywords":[{"id":"62440aa4-9873-4096-a4ad-bdf6028234f0","keyword":"锡晶须","originalKeyword":"锡晶须"},{"id":"c1270212-76b0-4eb7-bcea-ef1b55b1bc13","keyword":"形貌特征","originalKeyword":"形貌特征"},{"id":"d83d64ba-ca11-4254-948c-b909e8597180","keyword":"生长机理","originalKeyword":"生长机理"},{"id":"db6cc994-f925-4626-a782-be4b9ab9047a","keyword":"电镀","originalKeyword":"电镀"}],"language":"zh","publisherId":"bmjs200604001","title":"锡镀层表面晶须问题的研究现状与进展","volume":"35","year":"2006"},{"abstractinfo":"通过分析锡晶须的研究历史,将锡晶须的研究归结为三个阶段:早期对锡晶须现象的研究、锡晶须生长机理的研究和减缓锡晶须生长方法的研究.比较了锡晶须长度及密度的测量方法.总结了目前抑制锡晶须生长的方法:在不同基底材料上采用不同厚度镀锡层;使用Ni、In等阻挡层;对镀层表面进行热处理和回流处理;避免使用纯锡镀层,镀层合金化;在镀层表面覆盖保形涂层.","authors":[{"authorName":"王群勇","id":"dab54589-8980-4b4d-9240-34ff46ba4a0c","originalAuthorName":"王群勇"},{"authorName":"刘燕芳","id":"14b1f55a-80b3-4869-96f3-55c26124c33d","originalAuthorName":"刘燕芳"},{"authorName":"白桦","id":"6d878362-fc25-41fa-914c-109222557690","originalAuthorName":"白桦"},{"authorName":"吴文章","id":"4de3e99e-a38f-4fbd-a5b4-e848feaeb2a1","originalAuthorName":"吴文章"},{"authorName":"孙旭朋","id":"83140591-2899-47d4-a781-011d451dabf0","originalAuthorName":"孙旭朋"}],"doi":"10.3969/j.issn.1007-2330.2010.03.004","fpage":"13","id":"a0e224ae-b7db-421f-b96d-50955b239745","issue":"3","journal":{"abbrevTitle":"YHCLGY","coverImgSrc":"journal/img/cover/YHCLGY.jpg","id":"77","issnPpub":"1007-2330","publisherId":"YHCLGY","title":"宇航材料工艺 "},"keywords":[{"id":"7c565b94-ad9b-4cfe-86f3-edfec2f28f0e","keyword":"航用元器件","originalKeyword":"航用元器件"},{"id":"832f53ca-e8bf-43d1-8edf-a7d9bb8be91a","keyword":"锡晶须","originalKeyword":"锡晶须"},{"id":"a525eed2-9dfb-4d5e-bc82-4f9368a0743f","keyword":"失效模式","originalKeyword":"失效模式"},{"id":"a3a4f0e5-8d16-41a7-8b70-a89353d3367c","keyword":"生长机理","originalKeyword":"生长机理"},{"id":"a3f1d23d-1165-4d47-95dc-014167c4c811","keyword":"减缓","originalKeyword":"减缓"},{"id":"7ddd205f-dc3e-40e9-8bed-b764ccd51160","keyword":"检测方法","originalKeyword":"检测方法"}],"language":"zh","publisherId":"yhclgy201003004","title":"宇航用元器件锡晶须生长研究","volume":"40","year":"2010"},{"abstractinfo":"研究了电镀雾锡层锡晶须在不同时效温度下的生长情形,并以统计方式探讨了锡晶须在不同形状的基材上的生长机制.结果表明:弯曲的引脚处会产生拉张及压缩应力,在凹面区域及其两侧平面所受到的压缩应力会促进锡晶须的生长,而在凸面区域及其两侧平面所受到的拉张应力会抑制锡晶须的生长;对比采用不同热处理温度的情况,锡晶须的数量和长度皆会随着温度的升高而减少.","authors":[{"authorName":"颜怡文","id":"ab23f70f-d04e-4bc4-8f65-46cccc44d8a1","originalAuthorName":"颜怡文"},{"authorName":"李照康","id":"4e9dfbab-9670-4cd6-aa0c-440fe9bbdd59","originalAuthorName":"李照康"},{"authorName":"邹孟妤","id":"a51d58ff-6fb6-4903-b73f-74ec05fb0579","originalAuthorName":"邹孟妤"}],"doi":"10.3969/j.issn.1001-3660.2010.03.006","fpage":"19","id":"84a61705-a691-4973-b314-345a06c4e493","issue":"3","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术 "},"keywords":[{"id":"b2516df5-188a-4653-9aad-8539748f37fd","keyword":"雾锡","originalKeyword":"雾锡"},{"id":"b9d3ba85-0ffd-4863-8960-a5355ae724c3","keyword":"锡晶须","originalKeyword":"锡晶须"},{"id":"2b58b69b-bc4b-4088-aae4-81bc202aba9d","keyword":"拉张应力","originalKeyword":"拉张应力"},{"id":"978f18d6-8b20-4492-b886-13ee6510495f","keyword":"压缩应力","originalKeyword":"压缩应力"}],"language":"zh","publisherId":"bmjs201003006","title":"电镀雾锡层锡晶须生长机制的研究","volume":"39","year":"2010"},{"abstractinfo":"稀土被认为是金属中的\"维他命\",在钎料中添加微量的稀土Ce可以显著地改善钎料合金的综合性能.然而,当钎料中添加过量的稀土时,将会发现Sn晶须的快速生长现象.结果表明,如果将Sn3.8Ag0.7Cu1.0Ce钎料内部的稀土相暴露于空气中,稀土相将发生氧化而产生体积膨胀,钎料基体对体积膨胀的抑制作用将使稀土相内部产生巨大的压应力从而加速Sn晶须的生长.","authors":[{"authorName":"郝虎","id":"81de2d24-dd37-43ef-8ea9-550cb60e2e8f","originalAuthorName":"郝虎"},{"authorName":"李广东","id":"477a0143-ec8b-4fb6-b87e-4966d3270bf7","originalAuthorName":"李广东"},{"authorName":"史耀武","id":"1f12845a-ea8a-4f88-906b-724ddfc9dd0a","originalAuthorName":"史耀武"},{"authorName":"夏志东","id":"d8f82e19-e748-4a9e-8367-f2f29ece132b","originalAuthorName":"夏志东"},{"authorName":"雷永平","id":"cfccb22c-725e-441a-8824-0e1ee1c27130","originalAuthorName":"雷永平"},{"authorName":"郭福","id":"70454527-1006-42df-a290-bc57f9e14c0a","originalAuthorName":"郭福"},{"authorName":"李晓延","id":"f47e1eeb-fdd9-4f7e-bbce-9f2622d29870","originalAuthorName":"李晓延"}],"doi":"","fpage":"866","id":"69537ba2-8a63-43a4-8dc8-efd0f86c065b","issue":"5","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"818675ff-3715-4f5b-b847-f90b4413e2c7","keyword":"无铅钎料","originalKeyword":"无铅钎料"},{"id":"98e11395-6683-446d-8662-b4e54b1a0b94","keyword":"稀土","originalKeyword":"稀土"},{"id":"4fa651b3-b403-40e1-800d-bdf620227d14","keyword":"锡晶须","originalKeyword":"锡晶须"}],"language":"zh","publisherId":"xyjsclygc200905026","title":"稀土Ce加速Sn晶须生长的研究","volume":"38","year":"2009"},{"abstractinfo":"随着公众环保意识的增强,含铅焊料的发展和应用受到了极大的限制,研制新型的、环境友好的无铅焊料来取代传统的锡铅焊料成为近年来研究的热点,而添加微量元素合金化以获得性能优异的无铅焊料尤其受到研究者的关注。本文系统地综述了添加微量稀土元素对无铅焊料物理化学性能、显微组织、力学性能、电迁移及锡晶须生长等的影响,并对稀土元素在无铅焊料中的应用及发展趋势进行了展望。","authors":[{"authorName":"刘文胜","id":"4a690a63-268f-4fd6-81f7-5c3208153a3e","originalAuthorName":"刘文胜"},{"authorName":"邓涛","id":"d88eeff6-cbf7-4f5a-9faf-78286b13c49f","originalAuthorName":"邓涛"},{"authorName":"马运柱","id":"11d0c2a9-fa60-46f9-9f83-bb1406169ea1","originalAuthorName":"马运柱"},{"authorName":"彭芬","id":"29e20f8f-528e-44be-9485-73dea216689a","originalAuthorName":"彭芬"},{"authorName":"黄国基","id":"0646e9b6-5634-42b4-be09-6b4816848bee","originalAuthorName":"黄国基"}],"doi":"","fpage":"800","id":"d476c875-4922-45da-82e6-3d85a178c244","issue":"5","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"a641ecc0-d8e0-4e6e-87a2-1497e7130055","keyword":"无铅焊料","originalKeyword":"无铅焊料"},{"id":"cd5d2240-b47a-4d3a-857e-e9ca3aa49eff","keyword":"稀土元素","originalKeyword":"稀土元素"},{"id":"42c88e4a-07a1-4863-a371-d0744af90b27","keyword":"力学性能","originalKeyword":"力学性能"},{"id":"cd24a34f-5171-4c34-8e76-bafb6b30d20d","keyword":"电迁移","originalKeyword":"电迁移"},{"id":"6342c7b8-d564-4ed8-9ef6-df67e8ec2547","keyword":"锡晶须","originalKeyword":"锡晶须"}],"language":"zh","publisherId":"clkxygc201105032","title":"稀土元素对无铅焊料性能的影响","volume":"29","year":"2011"},{"abstractinfo":"无铅封装工艺是IC制造商为了顺应电子产品无铅化趋势而发展起来的,但存在晶须生成的潜在威胁.因此,锡须的抑制方法成为研究的关键.对电子集成电路封装行业中常见的9种抑制锡须的方法--避免局部镀纯锡,选择亚光或低应力镀锡,选择适宜的镀层厚度,选择适宜的阻挡层,纯锡镀层表面回流处理,退火处理,避免在纯锡镀层表面进行压负载操作,采用有机涂层或其它金属涂层,采用适宜的电镀添加剂等进行了总结,为IC业无铅电镀提供参考依据.","authors":[{"authorName":"王先锋","id":"3693ab5a-5b8a-4176-8025-220c6e1bf2d4","originalAuthorName":"王先锋"},{"authorName":"贺岩峰","id":"28e4358c-71dc-4c76-8a94-43cd29e911bb","originalAuthorName":"贺岩峰"}],"doi":"10.3969/j.issn.1004-227X.2007.06.010","fpage":"30","id":"36978496-dbb0-4567-9c41-9f95ae876546","issue":"6","journal":{"abbrevTitle":"DDYTS","coverImgSrc":"journal/img/cover/DDYTS.jpg","id":"21","issnPpub":"1004-227X","publisherId":"DDYTS","title":"电镀与涂饰 "},"keywords":[{"id":"4af6c168-e275-4e08-bc36-d1fca7307adb","keyword":"IC","originalKeyword":"IC"},{"id":"fdc5a7d0-8323-4c44-867b-17ce1be24151","keyword":"无铅封装","originalKeyword":"无铅封装"},{"id":"f8b7801a-fff7-4498-9cb5-1446cb33234f","keyword":"锡须","originalKeyword":"锡须"},{"id":"f3cd52d7-7276-4810-aefc-61c617a0c9cc","keyword":"抑制方法","originalKeyword":"抑制方法"}],"language":"zh","publisherId":"ddyts200706010","title":"抑制锡须的方法","volume":"26","year":"2007"},{"abstractinfo":"开发无铅化纯锡电镀技术必须首先解决锡须问题.讨论了锡须形成的影响因素及机理.开发出一种能有效防止锡须生成的无铅纯锡电镀添加剂,该添加剂具有结晶细致、可焊性好、消耗量低、使用维护容易等优点,从而建立了一种抑制锡须的有效方法, 同时解决了纯锡电镀中的其它难题.介绍了控制锡须的其它一些有效措施及锡须生长加速试验.","authors":[{"authorName":"贺岩峰","id":"5f0768df-8d82-4229-8a9a-cfbe96771c41","originalAuthorName":"贺岩峰"},{"authorName":"孙江燕","id":"5bb9a288-e2da-4805-aa97-0e2e6ecbff57","originalAuthorName":"孙江燕"},{"authorName":"赵会然","id":"a69fd50e-6a2c-4d21-afec-24c6bf4ff801","originalAuthorName":"赵会然"},{"authorName":"张丹","id":"a0afce60-6ed6-48fe-89aa-006519c812a1","originalAuthorName":"张丹"}],"doi":"10.3969/j.issn.1004-227X.2005.03.014","fpage":"44","id":"5065a5a6-1040-4a93-928f-97d3dc4c24b8","issue":"3","journal":{"abbrevTitle":"DDYTS","coverImgSrc":"journal/img/cover/DDYTS.jpg","id":"21","issnPpub":"1004-227X","publisherId":"DDYTS","title":"电镀与涂饰 "},"keywords":[{"id":"8a934013-08ec-4051-8f6c-896b3f3660c0","keyword":"无铅纯锡电镀","originalKeyword":"无铅纯锡电镀"},{"id":"f33f6abe-6494-40ad-b5dd-09fc50bef9cf","keyword":"锡须","originalKeyword":"锡须"},{"id":"0df95a48-f73f-40c8-bbca-c75233e28baa","keyword":"添加剂","originalKeyword":"添加剂"}],"language":"zh","publisherId":"ddyts200503014","title":"无铅纯锡电镀晶须产生的原因和控制对策","volume":"24","year":"2005"},{"abstractinfo":"在25℃H50%的常温常湿条件下,对纯Sn镀层引脚的锡须生长进行了评估.无铅化纯锡镀层表面的锡须呈现针状、圆柱状、小丘状、束状等多种不同显微形貌.外界环境与锡须的生长形貌无关,锡须生长部位特定的材料内部应力条件和晶体缺陷环境是决定晶须形貌的主要因素.经过500 h的常态老化,镀层上短晶须占多数,只发现了极少量长度超过50μm的锡须,而正是这少量的长晶须是造成铜互连引线间锡须桥连短路的主要因素.抑制少量超长的针状晶须的生长是防止晶须生长风险的关键.","authors":[{"authorName":"陆裕东","id":"0fc69165-1551-40b1-b578-0186b902425f","originalAuthorName":"陆裕东"},{"authorName":"何小琦","id":"f6d5bc6d-7640-49bf-aefa-bdac23013dd5","originalAuthorName":"何小琦"},{"authorName":"恩云飞","id":"b0b02704-f1af-42ca-bec4-2cc70872fb54","originalAuthorName":"恩云飞"},{"authorName":"王歆","id":"11401802-e17d-47c3-8027-bab15975d1fc","originalAuthorName":"王歆"},{"authorName":"庄志强","id":"59945c18-1139-49f0-b4e4-4e7c6e5358ba","originalAuthorName":"庄志强"}],"doi":"","fpage":"110","id":"8eba8293-b28a-404e-9e72-a2b72c4413d7","issue":"12","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"f283a53b-9de6-46af-8b99-c26bb6151d15","keyword":"锡须","originalKeyword":"锡须"},{"id":"675af8ff-9acd-4997-8913-ef9d5a5b2103","keyword":"镀层","originalKeyword":"镀层"},{"id":"1a706a1d-1140-4392-bbae-d36285a74eb1","keyword":"互连","originalKeyword":"互连"},{"id":"b8994f0b-f8a4-4549-8092-448fefcf535b","keyword":"可靠性","originalKeyword":"可靠性"}],"language":"zh","publisherId":"cldb200812029","title":"无铅镀层表面的锡须形貌、测量和风险评估","volume":"22","year":"2008"},{"abstractinfo":"以废弃的稻草为原料,在1300~1400℃的氩气保护条件下制备SiC晶须.研究反应温度、反应时间、催化剂对SiC晶须制备的影响和反应机理.结果表明,SiC晶须在1350℃时生长最好;SiC晶须温度控制在1350℃左右为宜,采用先高温成核再低温保温的加热方式,反应时间控制在2h;碳化硅晶须主要以β型为主,同时含有少量α型SiC晶须.晶须以竹节状居多,晶须直径为10~200nm之间,长径比>10.用Fe粉和H3 BO3作催化剂所生成的晶须较多,但其长径比较小.反应机理主要是VLS机理,以废弃稻草为原料制备SiC晶须为稻草应用提供了一种新的途径.","authors":[{"authorName":"李胜杰","id":"01d144ef-8c21-4452-9304-ef0194934a4d","originalAuthorName":"李胜杰"},{"authorName":"刘国军","id":"7bb2e425-4fd7-4eeb-b18f-a7702c15c3c2","originalAuthorName":"刘国军"},{"authorName":"陈华","id":"d38a86dc-5f32-4111-b647-c2f39ae1e981","originalAuthorName":"陈华"},{"authorName":"贾素秋","id":"995263c3-dfee-4594-a65e-d29ba60a816e","originalAuthorName":"贾素秋"}],"doi":"","fpage":"333","id":"aca50dd0-5acf-41a2-a9ec-5f986b0ab2e3","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"5659ac52-e6fa-4a72-8660-e4742860e28e","keyword":"稻草","originalKeyword":"稻草"},{"id":"64c4f28a-68f4-4680-bf5b-8837a3544197","keyword":"制备","originalKeyword":"制备"},{"id":"89c56e7e-9eef-4920-807d-1aa75abdec59","keyword":"SiC晶须","originalKeyword":"SiC晶须"},{"id":"33819d1c-d7b2-472c-9cda-0114fde0d516","keyword":"VLS机理","originalKeyword":"VLS机理"}],"language":"zh","publisherId":"gncl201303007","title":"稻草制备SiC晶须","volume":"44","year":"2013"}],"totalpage":2596,"totalrecord":25960}