{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用高分子共混物的微相分离和白组装原理,采用溶液共混和旋转涂膜的方法制得聚苯乙烯/聚甲基丙烯酸甲酯(PS/PMMA)高分子共混物薄膜,对薄膜经过再加工得到具有纳米微孔的PMMA薄膜,研究了对溶液进行超声处理的时间、PS/PMMA共混物溶液浓度、旋涂转速和试片表面对掩膜形貌的影响.以此PMMA薄膜为掩膜对GaP表面进行湿法腐蚀,得到一种蜂窝状的表面微结构,它能使发光二极管(LED)的光功率平均提高18%.","authors":[{"authorName":"邓琛","id":"29b2f22b-e0c4-4606-b067-ce683def27e5","originalAuthorName":"邓琛"},{"authorName":"徐晨","id":"4cf1b92a-b783-4e11-8f54-f2af74b154c7","originalAuthorName":"徐晨"},{"authorName":"徐丽华","id":"2d6ae6e0-1ea5-47e9-a915-92ea164c3118","originalAuthorName":"徐丽华"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"8e9aae6a-af29-497e-9328-833dcbd46077","originalAuthorName":"邹德恕"},{"authorName":"蒋文静","id":"3aa7f234-e18b-4420-8c4a-5c3bcf203bf2","originalAuthorName":"蒋文静"},{"authorName":"戴天明","id":"75ff1254-bf51-4884-9a08-b155077e8ee3","originalAuthorName":"戴天明"},{"authorName":"李晓波","id":"9baffa68-4360-48e0-887d-6c2004d859dc","originalAuthorName":"李晓波"},{"authorName":"沈光地","id":"9c739687-b021-41ea-bc7c-db599aee290f","originalAuthorName":"沈光地"}],"doi":"","fpage":"151","id":"da5cd5b5-c426-4008-8f22-17490d886e9d","issue":"1","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"93919a45-c5b3-45cf-bbeb-4287ec7fd9a6","keyword":"高分子","originalKeyword":"高分子"},{"id":"5b0e1c90-e38f-4fd3-85b0-406452772b0f","keyword":"自组装","originalKeyword":"自组装"},{"id":"8f74c093-f737-4fc9-9ce4-b32c0d4294d7","keyword":"微结构","originalKeyword":"微结构"},{"id":"d26adae1-01f3-4e41-bf95-67ce1bf4605a","keyword":"发光二极管","originalKeyword":"发光二极管"}],"language":"zh","publisherId":"gfzclkxygc201001042","title":"高分子自组装掩膜的制备","volume":"26","year":"2010"},{"abstractinfo":"使用低压MOCVD生长应变InGaAs/GaAs 980 nm量子阱.研究了生长温度、生长速度对量子阱光致发光谱(PL)的影响.并将优化后的量子阱生长条件应用于980 nm半导体激光器的研制中,获得了直流工作下,阈值电流为19 mA,未镀膜斜率效率为0.6 W/A,输出功率在100 mW的器件.","authors":[{"authorName":"俞波","id":"1847f592-cebc-4139-9091-ca1b71d9bea8","originalAuthorName":"俞波"},{"authorName":"盖红星","id":"5becc38f-a341-4ebc-a29a-a1ee71edd40a","originalAuthorName":"盖红星"},{"authorName":"韩军","id":"3775bc2b-5371-4b8b-856a-4e717e491530","originalAuthorName":"韩军"},{"authorName":"邓军","id":"18c61fa4-92d6-48f6-808c-5c3f70f46426","originalAuthorName":"邓军"},{"authorName":"邢艳辉","id":"b2b41d42-550d-43cd-bb81-4ddbf9dac4f4","originalAuthorName":"邢艳辉"},{"authorName":"李建军","id":"b0482a0c-5b68-4b38-b9ed-b9f95109d04a","originalAuthorName":"李建军"},{"authorName":"廉鹏","id":"5c199688-9c3f-49a8-82b8-5c80fc8103d7","originalAuthorName":"廉鹏"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"4dca1659-5671-4960-acef-2b337538c883","originalAuthorName":"邹德恕"},{"authorName":"沈光地","id":"e2b28a45-9a16-4aa8-a2e2-92c150e587f5","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-5461.2005.01.015","fpage":"81","id":"d3a3bfbe-15a1-4ea1-a574-1c7442b8b4b7","issue":"1","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"6b320bb5-3cfa-4815-9cb1-4c93fdbe1f94","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"c569ff6b-3634-4493-b255-ef39c4512d7a","keyword":"半导体激光器","originalKeyword":"半导体激光器"},{"id":"102583dc-393a-4b0e-95db-b983e2355c02","keyword":"应变量子阱","originalKeyword":"应变量子阱"},{"id":"6bee8750-0ba3-4198-8822-0b6b75ff3142","keyword":"金属有机化学气相淀积","originalKeyword":"金属有机化学气相淀积"}],"language":"zh","publisherId":"lzdzxb200501015","title":"应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用","volume":"22","year":"2005"},{"abstractinfo":"GaN基LED的表面电流扩展对于器件的特性起着很重要的作用.制作环状N电极的器件在正向电压、总辐射功率、器件老化等特性方面较普通的电极都有很大的提高.通过一系列的实验对环状N电极和普通电极进行了比较,在外加正向电流为20 mA时,正向电压减小了6%,总辐射功率也略有提高,工作50小时后,总辐射功率相差8%,验证了环状N电极结构有利于器件电流扩展,减少器件串联电阻,减少了焦耳热的产生,提高了LED电光特性和可靠性.","authors":[{"authorName":"孙重清","id":"3ba4eaf4-acab-4321-a34e-8fef839a54cb","originalAuthorName":"孙重清"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"4ff7e54c-476a-40df-9652-6a5ffbea32bb","originalAuthorName":"邹德恕"},{"authorName":"顾晓玲","id":"b087e4bb-6ee6-41b6-9519-b77c0039a1f7","originalAuthorName":"顾晓玲"},{"authorName":"张剑铭","id":"17c3115c-84df-4674-ad77-16560752ffdc","originalAuthorName":"张剑铭"},{"authorName":"董立闽","id":"df755c06-55b6-4a26-ace2-4ac3adc26b4f","originalAuthorName":"董立闽"},{"authorName":"宋颖娉","id":"072df919-d0a8-4cef-8a11-0002179bce4e","originalAuthorName":"宋颖娉"},{"authorName":"郭霞","id":"95e41841-d87c-4a7f-93cd-205c304413a5","originalAuthorName":"郭霞"},{"authorName":"高国","id":"eae102a8-5d86-4892-8a37-4a0af657e7ab","originalAuthorName":"高国"},{"authorName":"沈光地","id":"f3b7ddde-81a3-443e-bd6e-cc63aa503749","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-5461.2006.06.024","fpage":"872","id":"eff2db40-3a0c-4dc5-b71b-3ef5d09ee611","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"195c69aa-bf5d-464a-bc60-2fdd46dcb34f","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"202c0e3f-8e69-4fb0-8e31-fd5e6e037d23","keyword":"固态照明","originalKeyword":"固态照明"},{"id":"cab25591-9319-4c51-8bea-f042b6fc270c","keyword":"环状N电极","originalKeyword":"环状N电极"},{"id":"dd5080b3-8e29-4f2b-91f5-be4e2a12a5dd","keyword":"总辐射功率","originalKeyword":"总辐射功率"},{"id":"cee90e7c-26fb-4f51-90a8-6d15117789d4","keyword":"电流扩展","originalKeyword":"电流扩展"}],"language":"zh","publisherId":"lzdzxb200606024","title":"GaN基LED电流扩展对其器件特性的影响","volume":"23","year":"2006"},{"abstractinfo":"使用感应耦合等离子体(ICP)刻蚀技术刻蚀GaAs材料,在光刻过程中采用不同厚度的光刻胶,研究在同一刻蚀条件下不同光刻胶厚度对刻蚀图形侧壁倾斜度的影响,并研究了光刻胶厚度对侧壁倾角影响在不同大小图形刻蚀中的尺寸效应,提出了关于刻蚀机理的尺寸增益现象及可能发生的刻蚀离子的散射模型,解释了光刻胶厚度较大时小线宽图形侧壁倾角变化明显的现象.在研究光刻胶厚度对侧壁倾角影响的基础上,研究了不同ICP刻蚀选择比对GaAs样品刻蚀后侧壁倾角的变化的影响,并从GaAs干法刻蚀机理及刻蚀条件对ICP刻蚀过程中的化学、物理反应的影响来解释这一现象.","authors":[{"authorName":"孙丽媛","id":"a06be5a3-3212-4610-a40e-7af92f03e963","originalAuthorName":"孙丽媛"},{"authorName":"高志远","id":"2aea54fd-573b-4811-a7db-f55441f79eec","originalAuthorName":"高志远"},{"authorName":"张露","id":"680fcd8c-7755-44d0-a0be-a7ed3ead48bc","originalAuthorName":"张露"},{"authorName":"马莉","id":"0d596d1d-dc41-4211-8c96-f695b7e5ec16","originalAuthorName":"马莉"},{"authorName":"吴文蓉","id":"db9e3c5b-9a06-42f1-9018-58ccd1f2f0d9","originalAuthorName":"吴文蓉"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"41542350-0f5a-4b15-a19a-af862d2db59f","originalAuthorName":"邹德恕"}],"doi":"10.3969/j.issn.1007-4252.2012.04.004","fpage":"283","id":"8664ffad-cd11-42ac-a472-5f3b31b9baf6","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"1317fb65-80c2-4c46-9e76-c91968afb4d1","keyword":"ICP刻蚀","originalKeyword":"ICP刻蚀"},{"id":"66c9ad62-016c-4665-8197-7fc62c2f8351","keyword":"光刻胶","originalKeyword":"光刻胶"},{"id":"c2adf488-6290-473f-9a75-9572a3bc99ba","keyword":"侧壁倾角","originalKeyword":"侧壁倾角"},{"id":"b7cc946c-b28d-47f5-9284-00d37d486893","keyword":"刻蚀选择比","originalKeyword":"刻蚀选择比"}],"language":"zh","publisherId":"gnclyqjxb201204004","title":"GaAs材料ICP刻蚀中光刻胶厚度及刻蚀条件对侧壁倾斜度的影响","volume":"18","year":"2012"},{"abstractinfo":"本文通过提出具有优点为微分量子效率可以大于1的一种新型多有源区隧道再生应变量子阱垂直腔面发射半导体激光器(VCSELs)结构,可得到阈值电流更小、输出功率更大的器件.同时,通过对这种器件功率效率的分析,总结出针对这种新型结构的以固定工作电流及串联电阻为参数的最优化DBR反射率公式,并且就功率效率与工作电流、串联电阻及反射率的关系进行了讨论,这将对器件的合理设计以及器件制备具有实质性的指导作用.","authors":[{"authorName":"朱文军","id":"7d2a06a3-d24c-4d9d-a40e-85e90521cedf","originalAuthorName":"朱文军"},{"authorName":"郭霞","id":"b88ce1ea-79ed-40c5-903a-d0189f181a83","originalAuthorName":"郭霞"},{"authorName":"廉鹏","id":"5b2995f4-1076-4ccd-9c0b-67a3d2649915","originalAuthorName":"廉鹏"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"1f44708b-2e8d-4be1-b19f-19f6e1a5542b","originalAuthorName":"邹德恕"},{"authorName":"高国","id":"c52a3ac0-5440-415f-a337-4339e14523ee","originalAuthorName":"高国"},{"authorName":"沈光地","id":"503874f5-f6d7-4c99-ad7f-bec0f729bb54","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-5461.2003.02.005","fpage":"157","id":"a8371c2a-d165-47c7-92d2-8f72311ab95f","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"b2eff9cc-30dc-4582-b2ae-6690aa542e68","keyword":"多有源区","originalKeyword":"多有源区"},{"id":"269ea14d-b253-4d19-87e8-45a78f3c8d73","keyword":"隧道再生","originalKeyword":"隧道再生"},{"id":"5511c7ca-378e-4af7-a745-5fffcc241a2b","keyword":"VCSELs","originalKeyword":"VCSELs"},{"id":"774304b6-a125-4d5b-b786-210f38e73658","keyword":"功率效率","originalKeyword":"功率效率"}],"language":"zh","publisherId":"lzdzxb200302005","title":"新型垂直腔面发射激光器的最优化设计模式","volume":"20","year":"2003"},{"abstractinfo":"提出了一种可工作于室温环境下的微型气动红外传感器,它基于气体吸收特定波段的红外辐射后产生的一系列热效应为物理基础,可获得包含红外辐射源信息的信号.为深入研究热效应所产生的微热信号对器件整体性能的控制和影响,优化器件的几何结构和行为,建立了符合器件工作机制的经典热传输模型,并在此基础上,利用通用商业有限元模拟软件ANSYS/FLORTRAN(R)进行流体-结构耦合分析,获得了微型腔体温度,流-固界面压力分布情况以及薄膜的弹性形变,掌握了微结构的机械特性以及流畅的热输运特性.","authors":[{"authorName":"吴骏苗","id":"c26f8b94-f345-4d61-a612-f79938ee6a7d","originalAuthorName":"吴骏苗"},{"authorName":"<span style=\"color:red\">邹</span><span style=\"color:red\">德</span><span style=\"color:red\">恕</span>","id":"4e73e4b8-9f67-41f0-b04c-37e924f1182f","originalAuthorName":"邹德恕"},{"authorName":"沈光地","id":"6c4dcc78-5267-4a3d-96dc-7e6d0f7daa44","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-4252.2004.01.019","fpage":"83","id":"6fa35040-81d3-4643-8181-7fbdaf8c5ee0","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"1e2dd195-19e0-4a37-b385-f8480e67abda","keyword":"微机械","originalKeyword":"微机械"},{"id":"bc0e9d28-4594-4efa-ae8c-46baddf32ac8","keyword":"气动红外传感器","originalKeyword":"气动红外传感器"},{"id":"3f713b38-3ac5-467c-b35d-bef065d67649","keyword":"流体-结构耦合模拟","originalKeyword":"流体-结构耦合模拟"}],"language":"zh","publisherId":"gnclyqjxb200401019","title":"微机械气动红外传感器的流体分析","volume":"10","year":"2004"},{"abstractinfo":"对<span style=\"color:red\">德</span>马克连铸机存在的问题进行分析,并针对存在问题进行技术改造,收到较好的效果,使铸坯质量和产量得到明显的提高.","authors":[{"authorName":"姜振强","id":"09c1d70f-8c55-47ae-ba0f-c0e77f57b958","originalAuthorName":"姜振强"},{"authorName":"郭广文","id":"a17f5c61-3ee8-48b8-a907-1897fc12daaf","originalAuthorName":"郭广文"},{"authorName":"陈树林","id":"6d5932f7-228e-47bd-8e6d-5b42150a9407","originalAuthorName":"陈树林"}],"doi":"10.3969/j.issn.1005-4006.2003.05.005","fpage":"12","id":"5777ebc2-0764-44e5-8805-c7c4c71980c2","issue":"5","journal":{"abbrevTitle":"LZ","coverImgSrc":"journal/img/cover/LZ.jpg","id":"52","issnPpub":"1005-4006","publisherId":"LZ","title":"连铸"},"keywords":[{"id":"21ad4ab9-9ba1-467e-b781-12be7452c174","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"lz200305005","title":"<span style=\"color:red\">德</span>马克连铸机系统改造","volume":"","year":"2003"},{"abstractinfo":"介绍了贝纳<span style=\"color:red\">德</span>效应,胆甾相液晶织构等概念,实验制备出胆甾相液晶平面态样品,用偏光显微镜观察温度场致织构变化,观察到液晶盒在清亮点温度附近出现特殊花纹图案,类似于贝纳<span style=\"color:red\">德</span>效应或者是温度场致方格栅效应.实验现象说明了温度场使液晶分子产生对流,在偏光显微镜下观察双折射干涉,指向矢分布有周期性变化,形成了微观的贝纳<span style=\"color:red\">德</span>花纹.实验现象对于胆甾相液晶基础研究具有一定意义.","authors":[{"authorName":"杨磊","id":"5013b502-d604-4221-9af6-8bbbd1960581","originalAuthorName":"杨磊"},{"authorName":"刘洋","id":"202a3a36-249d-468b-b8da-59e126411cd9","originalAuthorName":"刘洋"},{"authorName":"郑永磊","id":"b3d0d06e-5f02-457a-8669-2d895d24bcfb","originalAuthorName":"郑永磊"},{"authorName":"高攀","id":"d0eac134-2d43-4079-aead-c0198398411b","originalAuthorName":"高攀"},{"authorName":"范志新","id":"c705feda-75b8-4a3e-b8ce-75b233083e88","originalAuthorName":"范志新"}],"doi":"10.3788/YJYXS20122703.0288","fpage":"288","id":"33e8f1ec-a2c9-492e-91eb-0329df32f5d9","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"abe8f909-b3b4-46da-8e99-5ae5f2101e23","keyword":"胆甾相液晶","originalKeyword":"胆甾相液晶"},{"id":"3f874625-c7c5-48c7-ab2a-44cf168fb99b","keyword":"平面织构","originalKeyword":"平面织构"},{"id":"c5070beb-0731-49fc-b2c8-2db59f17bc70","keyword":"方格栅效应","originalKeyword":"方格栅效应"},{"id":"0dea2f30-25a1-44cc-b3df-f8245b693b31","keyword":"贝纳<span style=\"color:red\">德</span>效应","originalKeyword":"贝纳德效应"},{"id":"43b474c5-b82e-49a8-8bbe-9a835c9ce411","keyword":"偏光显微镜","originalKeyword":"偏光显微镜"}],"language":"zh","publisherId":"yjyxs201203002","title":"胆甾相液晶盒贝纳<span style=\"color:red\">德</span>效应实验","volume":"27","year":"2012"},{"abstractinfo":"建立了一快速、简单地测定阿<span style=\"color:red\">德</span>福韦酯及其降解产物阿<span style=\"color:red\">德</span>福韦单特戊酸甲基酯、阿<span style=\"color:red\">德</span>福韦的反相高效液相色谱方法.以Inertsil CN-3化学键合硅胶为固定相,以乙腈-25 mmol/L磷酸盐缓冲液(pH 4.0)(体积比为33∶67)为流动相,流速1.0 mL/min,检测波长260 nm.阿<span style=\"color:red\">德</span>福韦酯、阿<span style=\"color:red\">德</span>福韦的质量浓度分别为1.861～181.7 mg/L和2.018～197.2 mg/L时与峰面积呈良好的线性关系(r分别为0.9999和0.9998);阿<span style=\"color:red\">德</span>福韦酯及阿<span style=\"color:red\">德</span>福韦平均加样回收率分别为99.5% ～101.0%和99.1% ～99.6% ,相对标准偏差(RSD)均低于1.0% ,阿<span style=\"color:red\">德</span>福韦的最小检测量(以信噪比为3计)为1 ng.该方法能同时测定阿<span style=\"color:red\">德</span>福韦酯及其降解产物,可用于阿<span style=\"color:red\">德</span>福韦酯降解产物的检测.","authors":[{"authorName":"蒋晔","id":"d81c9556-101e-44ae-8f7d-708558882cea","originalAuthorName":"蒋晔"},{"authorName":"徐智儒","id":"9eef3ed2-ee80-4552-ab3a-268dbcbc9fd9","originalAuthorName":"徐智儒"},{"authorName":"张晓青","id":"a608aa9c-6cca-4251-8a2a-f07c34a05c73","originalAuthorName":"张晓青"}],"doi":"10.3321/j.issn:1000-8713.2004.03.015","fpage":"248","id":"aae1beb3-7cee-4866-ac8c-fd12afe66285","issue":"3","journal":{"abbrevTitle":"SP","coverImgSrc":"journal/img/cover/SP.jpg","id":"58","issnPpub":"1000-8713","publisherId":"SP","title":"色谱 "},"keywords":[{"id":"b1838086-88c9-409b-a0bb-b040bd650e14","keyword":"高效液相色谱法","originalKeyword":"高效液相色谱法"},{"id":"5511da67-0d84-4304-94fb-d76a67fc0b6b","keyword":"阿<span style=\"color:red\">德</span>福韦酯","originalKeyword":"阿德福韦酯"},{"id":"8b0de6ef-2781-4f9a-a028-670dc773b0c8","keyword":"降解产物","originalKeyword":"降解产物"}],"language":"zh","publisherId":"sp200403015","title":"反相高效液相色谱法测定阿<span style=\"color:red\">德</span>福韦酯及其降解产物","volume":"22","year":"2004"},{"abstractinfo":"主要研究了超声处理对伍<span style=\"color:red\">德</span>合金凝固组织及气孔的作用.结果表明,超声处理可以明显细化伍<span style=\"color:red\">德</span>合金的凝固组织;同时超声处理具有明显的除气效果,随着超声波功率的增强,晶粒尺寸明显减小,除气效果显著.对伍<span style=\"color:red\">德</span>合金凝固过程的超声处理,起主要作用的是声空化和声流作用.","authors":[{"authorName":"陈琳","id":"54889cfe-305a-4f61-9f2e-419640d22cd7","originalAuthorName":"陈琳"},{"authorName":"宗燕兵","id":"36a3e3db-ad71-4ca6-86e4-099f5ba9c418","originalAuthorName":"宗燕兵"},{"authorName":"苍大强","id":"9bf876c9-9046-49df-b187-7f60f1bd0f78","originalAuthorName":"苍大强"},{"authorName":"甄云璞","id":"42c2028d-2527-43ce-be89-437530e16f62","originalAuthorName":"甄云璞"}],"doi":"","fpage":"339","id":"3b4d84ce-753a-4845-a791-57864b34bbf0","issue":"3","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"6ed62144-afc9-4cfe-a445-f47b6ffe7641","keyword":"超声波","originalKeyword":"超声波"},{"id":"483e0482-c2d8-4408-893f-6513a38b54d1","keyword":"伍<span style=\"color:red\">德</span>合金","originalKeyword":"伍德合金"},{"id":"935bb526-03e2-49a9-b36c-483280ee22d8","keyword":"凝固组织","originalKeyword":"凝固组织"},{"id":"e50833e9-d94d-4e2c-ba32-a20b87330cde","keyword":"气孔","originalKeyword":"气孔"},{"id":"d329357a-8598-48fc-ba47-85513da3d2b6","keyword":"声空化","originalKeyword":"声空化"}],"language":"zh","publisherId":"clkxygc200803005","title":"超声处理对伍<span style=\"color:red\">德</span>合金细化及气孔生成的影响","volume":"26","year":"2008"}],"totalpage":28,"totalrecord":271}