{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"选择新型细晶高强IF钢为研究对象,在实验室进行了热轧、冷轧及罩式退火实验.利用光学显微镜、透射电镜复型和电子背散射衍射(EBSD)技术,研究了不同退火时间对细晶高强IF钢显微组织、析出相及织构的影响.结果表明,选择合适的退火时间,晶粒变得细小、均匀.细晶高强IF钢在退火过程中析出大量的NbC、Nb(CN)相;随退火时间延长,钢中析出相粒子偏聚长大.为了获得较强的有利织构及优异的冲压性能,实验钢退火时间应选定在5 min.","authors":[{"authorName":"陈越","id":"7fe6a2e5-f85d-498a-a3c6-218c9c479af5","originalAuthorName":"陈越"},{"authorName":"张红梅","id":"670aca88-80f1-43ad-b476-8e70537023ac","originalAuthorName":"张红梅"},{"authorName":"孙成钱","id":"dee8eaca-dcd1-468b-b0d3-fa2e123e28e4","originalAuthorName":"孙成钱"},{"authorName":"王洪斌","id":"f3d8b74e-8fc5-41c3-b5b7-00ff29cf2196","originalAuthorName":"王洪斌"},{"authorName":"马多","id":"fda8020a-9178-4f31-a1b8-7603ea0d885a","originalAuthorName":"马多"},{"authorName":"郭雅楠","id":"2758fea5-6dc9-43be-9242-6e1be4283c28","originalAuthorName":"郭雅楠"},{"authorName":"贾宏斌","id":"d4817d7b-ccaa-4328-a98c-e1d0ca4bd5af","originalAuthorName":"贾宏斌"}],"doi":"","fpage":"140","id":"e47b7259-04d2-4279-a817-dab97b6df0a4","issue":"4","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"c180d4ac-229a-46cf-a735-e541e0dacc52","keyword":"细晶高强IF钢","originalKeyword":"细晶高强IF钢"},{"id":"fd0a820c-d357-4636-993d-13ff5e47efcc","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"efad9f45-a4bf-439f-a2c8-6c3e9608ab6a","keyword":"析出相","originalKeyword":"析出相"},{"id":"a00216b9-02fc-48c8-a9d4-bc50087ee73e","keyword":"织构","originalKeyword":"织构"}],"language":"zh","publisherId":"jsrclxb201504024","title":"细晶高强IF钢退火时间研究","volume":"36","year":"2015"},{"abstractinfo":"采用溶胶-凝胶法(Sol-Gel)在Pt/Ti/SiO2/Si(100)衬底上制备了0.94(Na0.5 Bi0.5)TiO3-0.06BaTiO3(BNT-BT6)薄膜,研究了不同退火时间对其微结构和压电性能的影响.X射线衍射(XRD)结果表明,制备的BNT-BT6薄膜为钙钛矿型铁电薄膜,随着退火时间的延长,晶粒尺寸略有增加.原子力显微镜(AFM)结果表明,制备的薄膜表面比较平整、无裂缝.随着退火时间的延长,薄膜的粗糙度有所增加.在退火时长为60 min时薄膜表面具有最佳的均一性,在退火时间为90 min时薄膜均一性最差;优化退火时间,可提高薄膜结晶程度,避免焦绿石相的生成,进而提高BNT-BT6薄膜压电性能.压电力显微镜(PFM)结果表明,BNT-BT6薄膜的电畴为多畴结构.在不同退火时间下均有明显的压电响应,特别是在退火时间为60 min时,BNT-BT6原始电畴有着最高的振幅强度.在30 min、40 min、60 min和90 min退火时间时,其平均压电系数d33分别为48 pm/V、157 pm/V、186 pm/V和142 pm/V.","authors":[{"authorName":"韩昊","id":"28591e50-65c2-4c6b-a8cf-17368b07341d","originalAuthorName":"韩昊"},{"authorName":"詹科","id":"d18e03ea-153c-4f9e-b556-962fafb0e010","originalAuthorName":"詹科"},{"authorName":"王现英","id":"a50c5604-3713-43fb-bab4-6c5333087f7e","originalAuthorName":"王现英"},{"authorName":"郑学军","id":"2760e5db-4c04-4341-9f6a-9d8a151f0ab7","originalAuthorName":"郑学军"}],"doi":"10.11896/j.issn.1005-023X.2016.06.002","fpage":"6","id":"8e53c8ac-e689-4c48-8d55-97bf99d12bb5","issue":"6","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"4543f026-ea90-4f67-94a3-fd8e4823e374","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"b1050892-ecec-4256-9176-79ee23769505","keyword":"溶胶-凝胶法","originalKeyword":"溶胶-凝胶法"},{"id":"669e86cf-5757-4ef4-8745-1f7989a6457e","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"3135f057-0b4c-4a2e-bf8c-e208fa873b8a","keyword":"压电性能","originalKeyword":"压电性能"}],"language":"zh","publisherId":"cldb201606002","title":"退火时间对BNT-BT6薄膜微结构及压电性能的影响","volume":"30","year":"2016"},{"abstractinfo":"基于铝诱导非晶硅薄膜固相晶化方法,利用直流磁控溅射离子镀技术制备了Al/ Si…Al/ Si/ glass周期性结构的薄膜.采用真空退火炉对Al/ Si多层薄膜进行了500℃退火实验,通过透射电子显微镜(TEM)分析了不同退火时间下Al/ Si多层薄膜截面形貌的变化规律,并结合扩散过程探讨了退火时间对铝诱导非晶硅薄膜晶化过程的影响机理.研究结果表明:在铝诱导非晶硅薄膜固相晶化过程中,在退火过程的初期,晶态硅薄膜的生长主要来源于因Al的存在而形成的硅初始品核数量增加的贡献.随退火时间的延长,晶态硅薄膜的生长主要是依靠临界浓度线已推进区域中未参与形核的硅原子扩散至初始品核位置并进行外延生长来实现的.经500℃退火1 h后,Al/ Si薄膜的截面形貌巾出现了沿Si(111)晶面生长的栾品组织.","authors":[{"authorName":"焦栋茂","id":"52975c4a-abb4-498a-991b-1ad92c741dc6","originalAuthorName":"焦栋茂"},{"authorName":"王新征","id":"d1276778-9860-42bd-9a48-1edde0f2f416","originalAuthorName":"王新征"},{"authorName":"李洪涛","id":"e5d232a7-83bd-4493-85fd-68c38cb03b5d","originalAuthorName":"李洪涛"},{"authorName":"郭烈萍","id":"0ad08ece-bf37-490e-b309-ff1f4c450f31","originalAuthorName":"郭烈萍"},{"authorName":"蒋百灵","id":"dd7ef7b3-9e35-43db-9cea-3e3301eb0fbe","originalAuthorName":"蒋百灵"}],"doi":"","fpage":"370","id":"b188f92a-0674-4750-8715-10df3d97d1a6","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"d60113ab-3384-4488-8ff4-43e62337cba4","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"ddf254e4-a69b-4c0d-af41-179327b35121","keyword":"非晶硅薄膜","originalKeyword":"非晶硅薄膜"},{"id":"08b250c7-62d0-4269-a75a-d5481f4f1719","keyword":"晶化","originalKeyword":"晶化"},{"id":"61c3f46c-89dc-4c3b-80fd-43c88a0ea9ed","keyword":"扩散","originalKeyword":"扩散"}],"language":"zh","publisherId":"rgjtxb98201102016","title":"退火时间对铝诱导非晶硅薄膜晶化过程的影响","volume":"40","year":"2011"},{"abstractinfo":"通过测量p+Si/PEDOT:PSS/Tips-PEN/Ag器件的J-V特性,研究了退火时间对溶液法制备Tips-PEN薄膜电流传输特性的影响.实验结果表明,在退火时间为2h和5h的条件下,随偏置电压的增加,双对数J-V曲线存在斜率依次为2,大于3以及2的不同区域,而在退火时间达到10 h后,低电压下斜率为2的区域消失.根据空间电荷限制电流模型,分析了不同区域的电流传输机理,并提取了陷阱密度和空穴的迁移率.在退火时间为10h时,材料有最低的陷阱密度5.70×1018/cm3和最大的空穴迁移率1.68×10-4 cm2/(V·s),其在低偏置下传输特征的改变表明与溶剂残留有关的单一能级陷阱极大减小.","authors":[{"authorName":"滕支刚","id":"a241f912-5c6a-4ac5-9f20-1184989cfeff","originalAuthorName":"滕支刚"},{"authorName":"冷华星","id":"c222940b-4738-48b2-903b-8108874d0995","originalAuthorName":"冷华星"},{"authorName":"张玲珑","id":"35ebc961-fddb-430b-871f-00295373ccb4","originalAuthorName":"张玲珑"},{"authorName":"钟传杰","id":"32f518a8-dcf0-4776-bfae-37ae5f3e62cd","originalAuthorName":"钟传杰"}],"doi":"10.3788/YJYXS20142902.0219","fpage":"219","id":"54ad427d-0e02-4013-89f0-11c4d8462108","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"24e6698e-cbe4-4027-80ee-031c93cf9397","keyword":"Tips-Pentacene","originalKeyword":"Tips-Pentacene"},{"id":"c461072f-dc07-4529-a430-2bbf199610c7","keyword":"空间电荷限制电流","originalKeyword":"空间电荷限制电流"},{"id":"3669e15e-967f-435a-877c-a7e450253072","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"1ddc96ce-95d9-4ccf-8b4b-f500b125df86","keyword":"溶剂残留","originalKeyword":"溶剂残留"}],"language":"zh","publisherId":"yjyxs201402011","title":"退火时间对溶液法制备Tips-Pentacene电流传输特性的影响","volume":"29","year":"2014"},{"abstractinfo":"在800℃下对铝热反应法制备的含10%Ni的纳米晶Fe3Al材料进行了不同时间的等温热处理,保温时间分别为4、8、12、16、20、24和48 h。利用XRD和TEM分析了不同保温时间下材料的平均晶粒尺寸,并对硬度进行了测试,研究了晶粒尺寸变化趋势以及硬度变化规律,探讨了两者之间的变化关系。结果表明：材料的平均晶粒尺寸在不同时间的退火处理后,呈现出两次减小,两次增大,最后趋于平稳的过程。晶粒尺寸在4 h等温处理后达到最小值16 nm,在24 h等温处理后达到最大值35 nm。存在一个临界值dc=20 nm,当晶粒尺寸小于dc时,维式硬度和晶粒尺寸之间满足反Hall-Petch关系,当晶粒尺寸大于dc时,两者之间呈现正的Hall-Petch关系。16 h退火处理后维氏硬度最大为490 HV,24 h退火后维氏硬度最小为410 HV。","authors":[{"authorName":"李翠玲","id":"82caec86-b9a3-408f-9c34-c4198872cb47","originalAuthorName":"李翠玲"},{"authorName":"喇培清","id":"d5599b54-fdb4-431b-84a1-926299a69084","originalAuthorName":"喇培清"},{"authorName":"刘辉","id":"91796b4b-f6cc-4937-8b9f-683256c37f6a","originalAuthorName":"刘辉"},{"authorName":"魏玉鹏","id":"e4e9d61f-37e1-4479-a311-02b7b0acd745","originalAuthorName":"魏玉鹏"},{"authorName":"卢学峰","id":"7dc5cd48-2ae7-426c-bfa3-895cb6854886","originalAuthorName":"卢学峰"},{"authorName":"陈经民","id":"1c220a20-5c3b-46c0-b039-76349198223e","originalAuthorName":"陈经民"}],"doi":"","fpage":"17","id":"538875f9-5d71-4d54-b69f-bc1209805d3c","issue":"4","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"502463d3-a637-4671-96ca-9cd11724c5cd","keyword":"纳米晶Fe3Al","originalKeyword":"纳米晶Fe3Al"},{"id":"6c678eec-a09f-4bfd-abfc-0dfdb3ca7993","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"32f2538d-0e89-4999-975a-2e7ab9cbb24a","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"36f60fd1-4c85-4901-b225-af667d8e455d","keyword":"维式硬度","originalKeyword":"维式硬度"},{"id":"7f01c500-2421-4a5f-86c0-8b0f403e9f80","keyword":"Hall-Petch关系","originalKeyword":"Hall-Petch关系"}],"language":"zh","publisherId":"jsrclxb201204006","title":"退火时间对块体纳米晶Fe_3Al材料组织性能的影响","volume":"33","year":"2012"},{"abstractinfo":"以细晶高强IF钢为研究对象,在退火温度850℃、不同退火时间下对试验钢进行罩式退火试验.通过拉伸试验、电子背散射衍射技术(EBSD)等,研究了不同罩式退火时间对细晶高强IF钢再结晶织构和晶界特征分布的影响.结果表明:随着保温时间的延长,重位点阵晶界的出现频率先增加后减少,在40 min时达到峰值,这与晶粒度及晶粒均匀性有关,与再结晶织构强度也密切相关.晶粒尺寸适当,且均匀性好,重位点阵出现率越大,有利织构强度越高.当退火温度为850℃、保温40 min时,试验钢具有最强的γ纤维织构,最高的n、r值,和较好的晶界特征分布.","authors":[{"authorName":"马多","id":"3d7c4365-84d3-45eb-bb37-9aed59abf1b0","originalAuthorName":"马多"},{"authorName":"张红梅","id":"daa4e2e9-0c55-4f02-85b8-e8631b1aa769","originalAuthorName":"张红梅"},{"authorName":"孙成钱","id":"9235b641-1e5c-4cad-8fdf-159c8634b9b2","originalAuthorName":"孙成钱"},{"authorName":"陈越","id":"dd96efdc-79ce-429a-a1f8-fcb2b1f1108a","originalAuthorName":"陈越"},{"authorName":"贾宏斌","id":"d3e87924-6196-4915-be34-9b9aa3e00df8","originalAuthorName":"贾宏斌"},{"authorName":"郭雅楠","id":"5912e9f1-56df-4005-a65c-d66a3cade290","originalAuthorName":"郭雅楠"}],"doi":"","fpage":"6","id":"d03324d3-98c3-4860-9f21-ece37781138d","issue":"4","journal":{"abbrevTitle":"SHJS","coverImgSrc":"journal/img/cover/SHJS.jpg","id":"59","issnPpub":"1001-7208","publisherId":"SHJS","title":"上海金属"},"keywords":[{"id":"7f329619-c0d5-4202-bb8c-ef19d5532639","keyword":"细晶高强IF钢","originalKeyword":"细晶高强IF钢"},{"id":"6d0ed6f6-9e05-490a-b7bd-fcd0d3152f6d","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"b1a5b1f6-eb6b-44eb-8eb6-5c43d0ef4791","keyword":"织构","originalKeyword":"织构"},{"id":"8918d255-78c0-4b7b-8ba8-980961465e35","keyword":"晶界特征分布","originalKeyword":"晶界特征分布"}],"language":"zh","publisherId":"shjs201504002","title":"退火时间对细晶高强IF钢的织构和晶界特征分布的影响","volume":"37","year":"2015"},{"abstractinfo":"采用射频等离子增强化学气相沉积设备，以高纯N2和B2H6为气源，制备了系列h-BN薄膜，得到适合生长h-BN薄膜的最佳工艺条件。在此条件下，研究了不同沉积时间和退火时间对薄膜组成和光学带隙的影响。采用傅立叶变换红外光谱仪、紫外可见光分光光度计和场发射扫描电子显微镜对样品进行了表征。实验结果表明：在衬底温度、射频功率和气源流量比率一定的条件下，沉积时间对h-BN薄膜成膜质量和光学带隙都有较大影响，且光学带隙与膜厚呈指数关系变化。700℃原位退火不同时间对 h-BN 薄膜的结晶质量有所影响，而物相和光学带隙基本没有改变。","authors":[{"authorName":"秦毅","id":"4c638f96-eacb-4532-9523-f2b6c126256f","originalAuthorName":"秦毅"},{"authorName":"赵婷","id":"a7353921-bcbc-4dc1-886c-800f0930a0fa","originalAuthorName":"赵婷"},{"authorName":"王波","id":"bb445777-41e7-4ca0-8181-73eacc42dd20","originalAuthorName":"王波"},{"authorName":"杨建锋","id":"5e324e80-e62c-4401-90c7-20d8c788f9e3","originalAuthorName":"杨建锋"}],"doi":"10.3724/SP.J.1077.2014.13549","fpage":"729","id":"e469087a-f45f-4db2-9201-4f4806eed408","issue":"7","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"bf57ccb5-dc30-45bb-bf0c-cff60ea336b7","keyword":"h-BN薄膜","originalKeyword":"h-BN薄膜"},{"id":"7d0d0508-a0ba-4ed8-be6a-510ff088ee3c","keyword":"沉积时间","originalKeyword":"沉积时间"},{"id":"b3ece56c-bbc1-49b2-a939-2ea9adfc8ef0","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"2b188816-f5a9-4224-95ad-ef6c4800c816","keyword":"光学带隙","originalKeyword":"光学带隙"}],"language":"zh","publisherId":"wjclxb201407011","title":"PECVD沉积和原位退火时间对h-BN薄膜组成及光学带隙的影响","volume":"","year":"2014"},{"abstractinfo":"研究了不同退火时间对Mg-0.6Zr热轧板材阻尼性能的影响.结果表明:350℃×3h的退火工艺使合金发生了完全再结晶,同时退火后的强度和硬度有所下降,而延伸率有所提高.合金在热轧态下的阻尼性能很低,且几乎与应变振幅无关;退火处理后,合金的阻尼性能得到明显提高,且随退火时间的延长而增大,完全再结晶后,阻尼性能几乎不再随退火时间的延长而变化,此时阻尼性能与应变振幅有关,即随应变振幅的提高而不断提高,尤其是在高应变振幅下.Mg-0.6Zr系合金上述阻尼性能的变化可以用Granato-Lüicke位错钉扎模型来解释.","authors":[{"authorName":"张佳","id":"044c30b1-3139-4a92-b077-2a0448d33774","originalAuthorName":"张佳"},{"authorName":"刘楚明","id":"6b1c974f-e664-4f89-9ab9-fe06bbd15aea","originalAuthorName":"刘楚明"},{"authorName":"王荣","id":"fb558408-9580-4e54-b35c-3af370f11071","originalAuthorName":"王荣"},{"authorName":"周海涛","id":"8a5a1b41-73ee-4bd6-b457-2fa5e4b1cfcc","originalAuthorName":"周海涛"},{"authorName":"纪仁峰","id":"c404b9ee-e29e-4729-9dd3-73f8727e242e","originalAuthorName":"纪仁峰"}],"doi":"10.3969/j.issn.1673-2812.2006.06.031","fpage":"916","id":"bac581f7-afd1-4bb6-b506-b2c567b4c2fe","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"9baf7472-04da-4b4c-a332-0dbcc6760dac","keyword":"Mg-0.6Zr热轧板材","originalKeyword":"Mg-0.6Zr热轧板材"},{"id":"bbd60bb2-e5a7-44eb-b128-ab953a26c94d","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"ceda4bd9-2248-4702-9bca-9cf50c898fa6","keyword":"阻尼性能","originalKeyword":"阻尼性能"}],"language":"zh","publisherId":"clkxygc200606031","title":"退火时间对Mg-0.6Zr热轧板材阻尼性能的影响","volume":"24","year":"2006"},{"abstractinfo":"采用射频磁控溅射的方法,在玻璃基片上制备了不同Ag层厚度的[Ag/FePt 2nm]10多层薄膜,经550℃真空热处理后,得到L10有序结构的FePt薄膜.实验结果显示,FePt单层薄膜经550℃退火30min后其易磁化轴处于垂直方向和面内方向之间,而550℃退火60min后其易磁化轴处于垂直于膜面方向,垂直矫顽力和面内矫顽力分别为634和302kA/m;真空退火后[Ag/FePt]10多层膜表现为面内磁晶各向异性,550℃退火60min后[Ag 2.8nm/FePt 2nm]10多层薄膜垂直矫顽力和面内矫顽力分别为309和778kA/m,并且随着Ag层的加入,部分FePt颗粒已经被Ag原子隔开了,颗粒之间的交换耦合作用变弱了.","authors":[{"authorName":"董凯锋","id":"0ea0335f-a502-4cbf-82b1-e4c846398f3a","originalAuthorName":"董凯锋"},{"authorName":"程晓敏","id":"ba808c26-b36d-4980-af40-f31f4b1afbc3","originalAuthorName":"程晓敏"},{"authorName":"鄢俊兵","id":"b3d57bfe-bcc3-46d8-817f-d50a33b5ca1c","originalAuthorName":"鄢俊兵"},{"authorName":"程伟明","id":"f8e69eb8-05e7-41aa-88ce-1b9dbc4ff19c","originalAuthorName":"程伟明"},{"authorName":"缪向水","id":"00389967-a5d6-4d56-9cfa-fc28731b17b2","originalAuthorName":"缪向水"},{"authorName":"许小红","id":"3d889e23-a448-4d9a-8518-9b63a69484f6","originalAuthorName":"许小红"},{"authorName":"王芳","id":"b2bd7939-3b88-4c38-bd7a-bfa4491779ab","originalAuthorName":"王芳"},{"authorName":"杨晓非","id":"53db8309-f507-44d2-8cc5-36f62cf482d7","originalAuthorName":"杨晓非"}],"doi":"","fpage":"20","id":"db5a6da1-8404-4044-b598-4e9bdc09986f","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"4dc1705e-bfeb-4350-8e44-772a0af70eb8","keyword":"FePt薄膜","originalKeyword":"FePt薄膜"},{"id":"1c492fdf-0742-4171-a041-92a78b70e8d6","keyword":"矫顽力","originalKeyword":"矫顽力"},{"id":"6681e209-1938-41af-9884-883205bdb248","keyword":"退火时间","originalKeyword":"退火时间"}],"language":"zh","publisherId":"gncl200901006","title":"不同退火时间对[Ag/FePt]10多层膜磁性能和微结构的影响","volume":"40","year":"2009"},{"abstractinfo":"采用不同的退火温度和退火时间对M2-1.0Si硅改性M2高速钢进行退火处理,并通过显微组织、高温力学性能的测试与分析.研究发现:退火温度和退火时间均对硅改性M2高速钢的组织和力学性能产生重要影响,退火温度不宜过高、退火时间不宜过长,保持8h退火时间不变,随退火温度从760℃增至880℃,M2-1.0Si硅改性M2高速钢的平均晶粒尺寸先基本不变后迅速增大,抗拉强度和断面收缩率均先增加后减小;保持850℃退火温度不变,随退火时间从4h延长至12 h,硅改性M2高速钢的平均晶粒尺寸先缓慢增大后急剧增大,抗拉强度和断面收缩率均先基本不变后急剧减小.M2-1.0Si硅改性M2高速钢的退火温度优选为850℃、退火时间优选为8h.","authors":[{"authorName":"王红霞","id":"ee28fa35-c65e-40b1-bbb0-70176a484390","originalAuthorName":"王红霞"},{"authorName":"赵辉","id":"5941e2da-fbe0-43ac-ac72-ca791c8c95b1","originalAuthorName":"赵辉"}],"doi":"10.7513/j.issn.1004-7638.2016.01.025","fpage":"127","id":"c2b9b0d6-e48f-4b6c-bc3c-66132b07f325","issue":"1","journal":{"abbrevTitle":"GTFT","coverImgSrc":"journal/img/cover/gtft1.jpg","id":"28","issnPpub":"1004-7638","publisherId":"GTFT","title":"钢铁钒钛"},"keywords":[{"id":"7c775fe0-6464-48ca-8630-76ef0404b966","keyword":"硅改性M2高速钢","originalKeyword":"硅改性M2高速钢"},{"id":"6def7b20-175f-4e56-9ede-404e43d7961b","keyword":"退火工艺","originalKeyword":"退火工艺"},{"id":"a5d34bdc-0a40-44a0-9748-0ce1fcb12543","keyword":"退火温度","originalKeyword":"退火温度"},{"id":"7f49abd2-624e-4c04-b241-9f051a4ce761","keyword":"退火时间","originalKeyword":"退火时间"},{"id":"ca308ee2-4ad6-4e19-ba07-7132876a79b5","keyword":"高温力学性能","originalKeyword":"高温力学性能"}],"language":"zh","publisherId":"gtft201601025","title":"硅改性M2高速钢的退火工艺优化","volume":"37","year":"2016"}],"totalpage":2901,"totalrecord":29003}