Wei FENG
,
Tierui ZHANG
,
Yan LIU
,
Ran LU
,
Cheng GUAN
,
Yingying ZHAO
,
Jiannian YAO
材料科学技术（英文）
A series of photochromic hybrid films were prepared through entrapping Dawson type tungsten heteropolyoxometallates (P2W18O626-) and molybdenum heteropolyoxometallate (P2Mo18O626-) into polyacrylamide matrix. FTIR results showed that the Dawson geometry of heteropolyoxometallates is still preserved inside the composites and strong coulombic interaction is built between heteropolyoxometallates and polyacrylamide via hydrogen bonding. Irradiated with ultraviolet light, the transparent films change from colorless to blue and show reversible photochromism. The bleaching process occurs when the films are in contact with air or O2 in the dark. The molybdenum heteropolyoxometallate hybrid film has higher photochromic efficiency and slower bleaching reaction than tungsten heteropolyoxometallate hybrid film. ESR results indicated that polyacrylamide is a hydrogen donor and the photoreduced process is in accordance with the radical mechanism.
关键词:
Thin film
,
null
,
null
,
null
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
