材料期刊网

BINDING ENERGY OF SHALLOW DONOR IN In_xGa_(1-x)As/GaAsSTRAINED QUANTUM WELL

J. H. Xing(Department of Physics , Liaoning University , Shenyang 110036 , China)H.L. Huang(Department of Electronic Science and Engineering , Liaoning University , Shenyang 110036 , China)

金属学报(英文版)

The effect of the dielectric mismatch between the well and the barrier materials on the binding energies of shallow donor has been investigated in Inx Ga1-xAs/GaAsstrained quantum well. The binding energies as a function of the well widths and impurity positions in the well and the barriers are obtained by using a variational method. Calculation results show that the effect of the dielectric mismatch is quite sizable and such effect is larger for off-center impurity positions,but the effect of the lattice mismatch is small in general.

关键词: quantum well , null

Liaoning Magnesite Company

LI Shaocun , YU Tao Liaoning Magnesite Company.Haicheng , 114200 , Liaoning , China.

材料科学技术（英文）

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University of Science and Technology Beijing

JIA Shizhen University of Science and Technology Beijing , China.

材料科学技术（英文）

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Department of Metallurgy and Materials Engineering of Chongqing University

YAN Guangting Chongqing University , Sichuan , China.

材料科学技术（英文）

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Institute of Materials Science at Jilin University——A Brief Overview

WANG Yuming Institute of Materials Science , Jilin University , Changchun , 130023 , China

材料科学技术（英文）

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Abstracts of papers from Journal of University of Science and Technology Beijing

稀有金属（英文版）

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RF deflecting cavity design for bunch length measurement of photoinjector at Tsinghua University

中国物理C

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Design of an MeV ultra-fast electron diffraction experiment at Tsinghua university

中国物理C

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Huazhong University of Science and Technology(H.U.S.T)

材料科学技术（英文）

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Drive laser system for the DC-SRF photoinjector at Peking University

中国物理C doi:10.1088/1674-1137/40/1/017004

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