材料期刊网

Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

Wentao HUANG , Jilin WANG , Zhinong LIU , Peiyi CHEN , Peihsin TSIEN , Xiangti MENG

材料科学技术（英文）

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain βdecreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as βdecreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of βfor both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

关键词: Electron irradiation , null , null , null

High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system

Guangli LUO , Xiaofeng LIN , Peiyi CHEN , Peixin TSIAN

材料科学技术（英文）

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550 degrees C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

关键词:

Chen系统的状态变量周期性反馈控制

李开明 , 李亚洲 , 冯维贵 , 林长

量子电子学报 doi:10.3969/j.issn.1007-5461.2007.05.014

采用非线性反馈控制,用附加了带参数的正弦项对Chen系统进行了有效的控制.随着参数k的逐渐增大,系统的动力学行为呈现出一系列的变化.数值研究结果表明:随控制参数的增大,驱动信号的强度渐大,混沌系统由混沌运动到周期轨道,最终到一相点.

关键词: 混沌 , Chen系统 , 不动点 , Lyapunov指数 , 反馈控制

SIF expressions for center cracked strip loaded by uniformly distributed stress acting on central portion of crack - Corrections of Chen's results - Response

International Journal of Fracture

关键词:

Ion sputter erosion in metallic glass-A response to "Comment on: Homogeneity of Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass" by L-Y. Chen, Y-W. Zeng, Q-P. Cao, B-J. Park, Y-M. Chen, K. Hono, U. Vainio, Z-L. Zhang, U. Kaiser, X-D. Wang, and J-Z Jiang J. Mater. Res. 24, 3116 (2009)

Journal of Materials Research

The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.

关键词: room-temperature

第27卷B辑作者索引

金属学报

Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....

关键词:

基于二氧化碳封存的超临界两相流动的数值研究

高诚 , 胥蕊娜 , 陈黎 , 姜培学

工程热物理学报

格子Boltzmann方法(LBM)在计算复杂结构物理模型时具有独特优势并在模拟两相流动过程中能够高效清晰捕捉相界面.本文介绍了基于Shan-Chen多相模型的格子Boltzmann方法的理论成果以及基于二氧化碳封存的超临界两相流的模拟研究.结果表明,Shan-Chen模型在模拟两相流时符合Laplace定律,且两相层流时的速度分布和相渗曲线均与理论值吻合.二氧化碳封存过程中,较大的注入速率在提高二氧化碳残余俘获量的同时会降低其化学俘获量.

关键词: 二氧化碳封存 , 超临界两相流 , Shan-Chen模型

A molecular dynamics study of the structural change differences between Au-225 and Au-369 clusters on MgO surfaces at low temperature

Chinese Physics B

The differences in structural change between Au-225 and Au-369 clusters with their (111) facets supported on MgO(100) surfaces at 5 K are studied by using molecular-dynamics simulations with the atomic interchange potentials of the Au/MgO interface. The parameters are obtained from the ab initio energies using the Chen-Mobius inversion method. Analyses of the pair distribution functions show that the two Au clusters use different deformation processes to adjust the distances between the interface atoms, owing to the misfit between the atom distances among the clusters and the substrates. The local structural changes are identified by atomic density profiles.

关键词: interfaces;nanostructures;computer modelling and simulation;molecular;dynamics;local-structure changes;mgo(001) surface;au;adsorption;cu;nanoclusters;dimers;models;ag

1998 COMPREHENSIVE TABLE OF CONTENTS

中国腐蚀与防护学报

N。1Atmospheric Corrosivlty for Steels………………………………………………… .LIANG Caideng HO[I i。-tat（6）Caustic Stress Corrosion Cr。king of Alloy 800 Part 2.The Effect of Thiosul执e……………………………………… KONG De-sheng YANG Wu ZHAO Guo-zheng HUANG De.ltL。ZHANG Yu。。he CHEN She。g-bac（13）SERS slid E16CttOCh6iniC81 Stlldy Of Illhibit1Oli M6ch＆tllsth Of ThlollY68 Oil ITOll ID H....

关键词:

混沌系统的反相延迟同步

李国辉

量子电子学报 doi:10.3969/j.issn.1007-5461.2008.04.015

结合反向同步和延迟同步,提出一种新颖的反相延迟同步,基于状态观测器构造响应系统,并利用极点配置技术得到误差系统在原点处渐近稳定,实现了反相延迟同步.用Chen's混沌系统和Chua's电路为例进行数值仿真,在预先设定特征值的基础上,经极点配置可得到同步的响应系统,实验结果显示该方案简单有效.

关键词: 混沌 , 反相延迟同步 , 状态观测器 , Chen's系统 , Chua's电路