Dongli SONG
,
Jianfeng GU
,
Jiansheng PAN
,
Xin YAO
材料科学技术（英文）
For large-sized AISI P20 steel block used as plastic die with a thickness of more than 200~mm, appropriate quenching processes are the key to obtain much thick hardened layer. In this paper, different quenching processes of AISI P20 steel block such as oil quenching, direct water quenching, water quenching with pre-cooling and water quenching with pre-cooling and self-tempering were numerically investigated by computer simulation based on the detailed discussion on the mathematical models of quenching processes including partial differential equations of heat transfer, thermal physical properties, latent heat, heat transfer coefficient and calculation of phase transformation, The results show that the water quenching with pre-cooling and self-tempering process can not only effectively avoid quenching cracks, but also obtain deeper harden depth than oil quenching.
关键词:
Computer simulation
,
null
,
null
,
null
常永勤
,
介万奇
,
郭喜平
,
陈福义
,
安卫军
功能材料
研究了ACRT-B法生长的Mn0.1Cd0.9In2Te4晶体中界面的形状和各组元沿轴向的分布规律及其分凝因数.发现结晶界面为椭球形;采用理想配比生长MnxCd1-xIn2Te4晶体,其4种组元并不按(Mn,Cd):In:Te=1:2:4比例结晶,而是要重新分布;通过数学方法处理实验数据得到Mn,Cd和In的分凝因数在α相区分别为1.286、1.9257和0.7294,在β相区则分别为1.12、1.055和0.985.
关键词:
ACRT-B法
,
MnxCd1-x In2Te4
,
界面
,
分凝因数
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mn0.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
compositional distribution
,
infrared transmission spectra
,
mag- netic susceptibility
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
doi:10.3321/j.issn:1000-324X.2003.02.004
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mno.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里一外斯定律,在低温区(＜50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
成分偏析
,
红外透射光谱
,
磁化率
常永勤
,
安卫军
,
郭喜平
,
介万奇
功能材料
采用Bridgman法生长四元稀磁化合物半导体Mn0.22Cd0.78In2Te4晶体.当晶体生长到预定长度时,淬火得到固液界面.采用光学显微镜、扫描电镜、X射线衍射仪、ISIS能谱仪以及Leica定量金相分析仪研究了晶体中出现的界面形态、相的形貌和数量以及沿生长方向的相析出规律,并进行了相成分分析.研究发现,淬火得到的Mn0.22 Cd0.78In2Te4晶体中存在两个界面,其中一个为固液相变界面,另一个为由α+β两相区发展到单相β区时的转变界面,二者相对于生长初始端均为凹形;α+β两相区中,β相以条状、花状和近似圆片状形式存在,其中条状β相多分布在晶界处;越接近生长初始端,花状和近似圆片状β相越小,条状β相越细,它们的含量越少;X射线衍射图谱表明,β相为黄铜矿结构,α相为面心立方结构.
关键词:
MnxCd1-xIn2Te4
,
相变界面
,
β相
,
X射线衍射图谱
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
Farook ADAM*, Kei Lin SEK
催化学报
doi:10.1016/S1872-2067(11)60453-1
Indium incorporated silica samples with different indium contents were synthesized using a template free sol-gel method. The silica used was extracted from rice husk (RH) and the resulting catalyst was labeled as RH-xIn (x=5%,10%,15%, and 20%). From the N2 adsorption analysis the presence of type IV isotherm in RH-blank and RH-xIn indicated the mesoporous nature of the catalysts. In the XRD pattern, a broad band at ca.2θ=25° was observed for all the catalysts which showed them to be amorphous. TEM micrographs revealed that the material is composed of nanoparticles. Friedel-Craft benzoylation of toluene was carried out using the RH-xIn catalyst. The optimum conditions for the benzoylation of toluene were determined and at 373 K,100%conversion and 89%selectivity for the para-product (i.e.4-methylbenzophenone) were obtained.
关键词:
rice husk
,
sol-gel
,
indium
,
Friedel-Craft benzoylation
,
Toluene
金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
关键词:
