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Photoluminescence of ZnS Clusters in Zeolite-Y

We CHEN , Zhanguo WANG , Zhaojun LIN , Yan XU and Lanying LIN(Lab. of Semiconductor Materials Sciences , Institute of Semiconductors , Chinese Academy of Sciences , Beijing 100083 , China)

材料科学技术(英文)

Two obvious emissions are observed from the ZnS clusters encapsulated in zeolite-Y. The emissionaround 355 nm is sharp and weak, locating at the onset of the absorption edge. The bandaround 535 nm is broad. Strong and Stokes-shifted. Both the two emissions shift to blue andtheir intensities firstly increase then decrease as the loading of ZnS in zeolite-Y or clusters sizedecreases. Through investigation, the former is attributed to the excitonic fluorescence, andthe latter to the trapped luminescence from surface States. The cluster size-dependence of theluminescence may be explained qualitatively by considering both the carrier recombination andthe nonradiative recombination rates. Four peaks appearing in the excitation spectra are assignedto the transitions of 1S-1S, 1S-1P, 1S-1D and sudsce state, respectively. The excitation spectraof the clusters do not coincide with their absorption spectra. The states splitted by quantum-sizeconfinement are detected in the excitation spectra, but could not be differentiated in the opticalabsorption spectra due to inhomogeneous broadening. The size-dependence of the excitationspectra is similar to that of the absorption spectra. Both the excitation spectra of excitonicand of trapped emissions are similar, but change in relative intensity and shift in position areobserved.

关键词:

Amorphous B-C-N semiconductor

Journal of Applied Physics

Amorphous BC2N powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting materials. A bulk amorphous BC2N compound was produced by sintering the as-milled amorphous BC2N powders in a vacuum of 10(-5) Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BC2N compound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K. The mechanism of the formation of the amorphous BC2N powders is discussed. (C) 1998 American Institute of Physics.

关键词: bc2n

LaB6功能陶瓷材料的研究现状

郑树起 , 闵光辉 , 于化顺 , 韩建德 , 王维倜 , 张树玉

材料导报

综述了目前国内外LaB6功能陶瓷材料的研究概况及应用,综合了制备LaB6粉末、多晶、单晶的各种工艺.

关键词: LaB6 , 功能陶瓷 , 制备工艺

THE CHANGING ROLE OF THE NATIONAL LABORATORIES IN MATERIALS RESEARCH

WADSWORTH Jeffrey and FLUSS Michael(Chemistry and Materials Science Directorate , Lawrence Livermore National Laboratory , Livermore , CA 94551)

金属学报(英文版)

The role of the National Laboratories is summarized from the era of post World War II to the present time. The U.S. federal government policy for the National Laboratories and its influence on their materials science infrastructure is reviewed with respect to .determining overall research strategies, various initiatives to interact with industry (especially in recent years),building facilities that serve the nation, and developing leading edge research in the materials sciences. Despite reductions in support for research in the U.S. in recent years, and uncertainties regarding the specific policies for Research &Development (R&D) in the U.S., there are strong roles for materials research at the National Laboratories. These roles will be centered on the abilities of the National Laboratories to field multidisciplinary teams, the use of unique cutting edge facilities, a focus on areas of strength within each of the labs,increased teaming and partnerships, and the selection of motivated research areas. It is hoped that such teaming opportunities will include new alliances with China, in a manner similar, perhaps, to those recently achieved between the U.S. and other countries.

关键词: : U.S. Materials Science. U.S. National Laboratories and Facilities , null

SHALLOW STATES OF DONOR IMPURITIES AT DEFECTIVE SEMICONDUCTOR SURFACES

Communications in Theoretical Physics

Ground state energies for shallow states of donor impurities at certain idealized defective isotropic semiconductor surfaces are calculated variationally for GaAs surfaces with electrons confined within the semiconductor. Calculations show that impurity states with donor ions located at parts projecting out of surfaces have lower ground state energies than those with ions located at parts sunk into surfaces.

关键词: si;ge

Magnetotransport properties of Fibonacci semiconductor superlattices

Physical Review B

We study transport properties of Fibonacci semiconductor superlattices in a uniform magnetic field (B) applied along the growth direction. Complicated magnetoresistance oscillations which do not vary periodically in 1/B are found. A field-dependent metal-insulator transition is predicted, and it is shown that the magnetoresistance increases with increasing order of the periodic approximant. Also, we show that at low enough temperature the longitudinal magnetoresistance of a high-order periodic approximant of the quasiperiodic superlattice can be distinguished from that of a low-order periodic approximant.

关键词: high structural quality;longitudinal magnetoresistance;electronic-properties;transport-properties;icosahedral phases;penrose;lattice;quasi-crystals;wave-functions;quantization;spectrum

Influence of Magnetic Field and Lighting during the Creation Process of Nanohybrid Semiconductor-Nematic Structures on Their Impedance and Photo Response

Fedir Ivashchyshyn

材料科学技术(英文)

In this work, for the first time, photosensitive nanostructures with alternate semiconductor and magnetic oriented nematic molecular nanolayers were obtained. The established dependency on the ordering type of kinetic and optical properties is deserving attention. For the first time, the notion of `rotary' polaron in such structures is introduced and microscopic model is created, which explains band structure transformation. The model is well coordinated with experimental optical data, which, at the same time, indicate the prospects of application of materials obtained due to the intercalation engineering for photoenergetics.

关键词: Nanocomposites

Spin injection from ferromagnetic semiconductor CoZnO into ZnO

Gang JI , Shishen YAN , Yanxue CHEN , Qiang CAO , Wei XIA , Yihua LIU , Liangmo MEI , Ze ZHANG , null

材料科学技术(英文)

2×(FeNi/CoZnO)/ZnO/(CoZnO/Co) ×2 spin-injection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2×(FeNi/CoZnO) and (CoZnO/Co) ×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

关键词: Spin injection , 磁电阻 , 铁磁性半导体

Longitudinal magnetotransport in long-period semiconductor superlattices

Physical Review B

Longitudinal electron transport is investigated for a long-period semiconductor superlattice in the presence of a magnetic field applied along the growth direction of the superlattice. It is shown that the longitudinal magnetoresistance exhibits a complicated dependence on the magnetic-field strength. In contrast with the conventional Shubnikov-de Haas oscillations, the magnetoresistance shows periodic oscillations only in the region of low reciprocal magnetic field.

关键词: magnetoresistance

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