胡社军
,
刘正义
,
魏兴钊
,
曾德长
,
F.R.de Boer
,
K.H.J.Buschow
材料研究学报
doi:10.3321/j.issn:1005-3093.2000.04.020
用真空电弧熔炼了Ce2Co17-xSix化合物,研究了化合物的结构与内禀磁性.研究了Si原子在Co次晶格四种晶位的择优占位与Co次晶格磁晶各向异性的关系,结果表明,18h晶位对Co次晶格磁晶各向异性的负贡献起重要作用.
关键词:
Ce-Co永磁材料
,
磁晶各向异性
,
择优占位
顾正飞
,
刘正义
,
F.R.de Boer
,
K.H.J.Buschow
材料研究学报
doi:10.3321/j.issn:1005-3093.2004.01.015
用磁性测量和磁取向粉末X射线衍射方法,研究了Gd2Co17-xMx(M=Al,Ga;x≤4)化合物的磁晶各向异性与Al(Ga)原子浓度的依赖关系.随着x的增加,Gd2Co17xAlx(x≥1)和Gd2Co17-xGax(x≥2)化合物的室温磁晶各向异性由易面转变为易轴;在Al、Ga原子的浓度分别为x=0.9和x=1.8附近时,室温各向异性常数K1由负变正,在x=3时达到最大值,且含Al化合物的K1最大值约为含Ga化合物的四倍.根据Al(Ga)原子在Gd2Co17化合物不同Co晶位择优占位的事实,讨论了Co亚点阵磁晶各向异性的演变结果表明,Al原子择优占据6c晶位是导致Al原子对Co亚点阵各向异性正贡献大于Ga原子的主要原因.
关键词:
金属材料
,
磁晶各向异性
,
磁性测量
,
择优占位
,
稀土钴化合物
材料科学技术（英文）
Fe/Ti multilayers with different modulation wavelengths (Lambda) prepared by r.f. sputtering has been investigated by using cross sectional transmission electron microscopy (XTEM). It was observed that the columnar structure, interface morphology, and metastable phase presented at the interface of the multilayer system strongly depend on the bilayer thickness (Lambda). For high period multilayers, the waviness wavelength of interfaces is about two times broader than the column diameter. For a sample with Lambda =30 nm, its column width and waviness wavelength was about 80, and 190 nm, respectively. Both of them decreased with the reduction of Lambda, so as to nearly equal values of column diameter and waviness wavelength were obtained. The Fe and Ti grains of both 30 nm and 6 nm multilayers are polycrystalline, and have a textured structure. In short bilayer thickness (Lambda =6 nm), the intermetallic compound Fe2Ti was presented at the interfaces due to solid state reaction; for Lambda =2 nm, amorphous phase Ti-rich layer was formed at the interfaces, resulting in a sharp interface multilayer structure.
关键词:
model;films
Wei WANG
,
Lishi WEN
材料科学技术（英文）
Fe/Ti multilayers with different modulation wavelengths (Lambda) prepared by r.f. sputtering has been investigated by using cross sectional transmission electron microscopy (XTEM). It was observed that the columnar structure, interface morphology, and metastable phase presented at the interface of the multilayer system strongly depend on the bilayer thickness (Lambda). For high period multilayers, the waviness wavelength of interfaces is about two times broader than the column diameter. For a sample with Lambda =30 nm, its column width and waviness wavelength was about 80, and 190 nm, respectively. Both of them decreased with the reduction of Lambda, so as to nearly equal values of column diameter and waviness wavelength were obtained. The Fe and Ti grains of both 30 nm and 6 nm multilayers are polycrystalline, and have a textured structure. In short bilayer thickness (Lambda =6 nm), the intermetallic compound Fe2Ti was presented at the interfaces due to solid state reaction, for Lambda =2 nm, amorphous phase Ti-rich layer was formed at the interfaces, resulting in a sharp interface multilayer structure.
关键词:
倪卓
,
李丹
,
钟玉莲
,
刘丽双
,
陈展明
材料导报
采用十八胺对永固红F5R进行化学修饰,以Span-80为稳定剂,四氯乙烯为分散介质,制备了分散性和稳定性良好的电泳液.以此电泳液为囊芯,脲甲醛树脂为壁材,制备了一种红色电子墨水微胶囊,研究了投料比、合成温度、酸化时间和搅拌速度等对合成微胶囊的影响.结果表明,合成的微胶囊形貌呈规则球形,表面光滑,囊壁结构致密,强度较好,包覆率达到82%,囊芯含量达到76%.永固红F5R电泳液微胶囊具有明显的电场响应行为,可以作为柔板显示器的功能材料.
关键词:
电子墨水
,
微胶囊
,
永固红F5R
,
电场响应
Deheng ZHANG
,
Dejun ZHANG
,
Qingpu WANG
,
Tianlin YANG
材料科学技术（英文）
This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r.f. sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1 x 10(-3) to 5.3 x 10(-4) Ohm .cm, carrier densities more than 2.6 x 10(20) cm(-3) and Hall mobilities between 5.78 and 13.11 cm(2)/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.
关键词:
Xiancheng WU
,
Yinyue WANG
,
Hui YAN
,
Guanghua CHEN
材料科学技术（英文）
a-Si:C:N:H thin films have been deposited at room temperature by r.f. reactive-sputtering of a Si target in an Ar+H2+N2+CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure and optical, electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si:C:N:H films are thermally stable within the temperature ranging from 200 to 800°C. They are of interest for the potential applications in electronic devices.
关键词:
李竹影
,
宋玉苏
,
刘祖黎
,
姚凯伦
功能材料
由于薄膜沉积过程中缺乏氧气,溅射得到的是化学配比偏离WO3的氧化钨薄膜,本文详细研究了不同电压下,R.F磁控溅射生成的不同化学配比的氧化钨薄膜的伏安循环特性;发现它们在一定电压范围内(1.15V到2.8V)都可产生着色现象.着色后对光的吸收是一致的.光的透过率显示电压超过某一值后,膜的变色能力减弱并消失.XRD显示本文所得氧化钨薄膜主要是非晶态的结构.
关键词:
氧化钨薄膜
,
电致变色
,
r.f.磁控溅射
Jin MA
,
Xiaotao HAO
,
Shiyong ZHANG
,
Honglei MA
材料科学技术（英文）
Transparent conducting Al-doped zinc oxide (ZnO:Al) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25~180℃). The structural, optical and electrical properties of the deposited films were investigated. High quality films with electrical resistivity as low as 8.5×10-4 w\c·cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9×1020 to 7.1×1020 cm-3 with mobilities from 4 to 8.8 cm2V－1s－1 The densities of the films are in the range from 4.58 to 5.16 g/cm－3.
关键词:
Zinc oxide
,
null
,
null
张晓玲
,
胡奈赛
,
何家文
无机材料学报
采用 Ｆ Ｔ Ｉ Ｒ、 Ｔ Ｅ Ｍ、 Ｓ Ｅ Ｍ 等技术， 对在渗硼层表面经ｒ.ｆ. Ｐ Ｃ Ｖ Ｄ 沉积的 Ｂ Ｎ 膜进行了研究试验证明， 与采用 Ｎ２ 气和 Ｈ２ 气相比， 以 Ａｒ ＋ １０ｖｏｌ％ Ｈ２ 作为载气， 所获得的膜层ｃ-Ｂ Ｎ 含量最高， 膜厚最大， 可达４.６μｍ ， 且膜基结合良好而以 Ｎ２ 气或 Ｈ２ 气为载气时， 前者会导致膜基结合力大大下降， 后者会引起沉积速度明显降低结果表明， 对于 Ｐ Ｃ Ｖ Ｄ 过程， 控制ｃ- Ｂ Ｎ 形成的主要因素是离子轰击能量的转移， 而不是氢的选择溅射过程试验获得的膜层由ａ- Ｂ Ｎ 和ｃ- Ｂ Ｎ 组成， ｃ- Ｂ Ｎ的尺寸为２０ ～４０ｎｍ
关键词:
c-BN膜
,
null
,
null
