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CONTROL TECHNIQUES FOR DIGESTION IN BAYER PROCESS

G. Y. Gan and L.Z. Wang (Pingguo Aluminum Company , Pingguo 531400 , China)

金属学报(英文版)

The control techniques for indirect heating digestion in Bayer process of alumina production were researched and developed. They include controlling chemical composition of slurry to be digested and controlling digestion status and energy consumption. Very good performances and technical and technical and economical figures for digestion process have been obtained by carefully applying these comprehensive control techniques in Pingguo alumina refinery.

关键词: control technique , null , null

INTRODUCTION TO NEW TECHNOLOGY AND EQUIPMENTS IN PINGGUO ALUMINA REFINERY

S.J. Yang , G. Y. Gan and L.Z. Wang (Pingguo Aluminum Company , Guangxi 531400 , China)

金属学报(英文版)

The new technology and equipments used in alumina refinery in PINGGUO ALUMINUM COMPANY were introduced. Problems encountered during early period of its operation and improvements to the process and equipments were discussed. Current opemtion situation and pedect technical and economical figures were also introduced.

关键词: alumina , null , null , null

Ion sputter erosion in metallic glass-A response to "Comment on: Homogeneity of Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass" by L-Y. Chen, Y-W. Zeng, Q-P. Cao, B-J. Park, Y-M. Chen, K. Hono, U. Vainio, Z-L. Zhang, U. Kaiser, X-D. Wang, and J-Z Jiang J. Mater. Res. 24, 3116 (2009)

Journal of Materials Research

The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.

关键词: room-temperature

Zn掺杂ZGaN纳米线的制备及表征

梁建 , 王晓宁 , 张华 , 刘海瑞 , 王晓斌 , 许并社

人工晶体学报

本文以氧化镓、氧化锌和氨气为原料,通过常压化学气相沉积法(APCVD)在Au/Si( 100)衬底上成功生长出了Zn掺杂的”Z”形GaN纳米线.利用场发射扫描电镜(FESEM)、X-射线衍射仪(XRD)、透射电子显微镜(TEM)、光致发光谱(PL)等测试方法对样品的形貌、晶体结构及光学性质进行了表征.结果表明:在温度为950℃,氧化镓和氧化锌的质量比为8∶1的条件下,制备出的Zn掺杂ZGaN单晶纳米线直径为70 nm、长度为数十个微米,生长机理遵循VLS机制.Zn元素的掺杂使GaN纳米线在420nm处出现了光致发光峰,发光性能有所改善.

关键词: 氮化镓 , 纳米线 , Zn掺杂 , 化学气相沉积 , 发光性能

Studies of the Local Structure and the g Factors of the Cu(2+) Site in Y(2)BaCuO(5)

Journal of Superconductivity and Novel Magnetism

The local structure and the g factors (g(x), g(y), and g(z)) of the Cu(2+) site in Y(2)BaCuO(5) are theoretically studied using the perturbation formulas of the g factors for a 3d(9) ion in orthorhombically elongated octahedra. The orthorhombic field parameters in these formulas are determined from the superposition model and the local geometry of the system. From the calculations, the oxygen octahedron is found to undergo the local elongation Delta Z (approximate to 0.05 angstrom) along c-axis and the relative bond length variation Delta X (approximate to 0.1 angstrom) along a- and b-axes, respectively. The calculated g factors based on the above local structure are in good agreement with the experimental data. The relationships between the anisotropies of the g factors and the low symmetrical (orthorhombic) distortions of the Cu(2+) site in Y(2)BaCuO(5) are discussed.

关键词: Crystal fields and spin Hamiltonians;Electron paramagnetic resonance;Cu(2+);Y(2)BaCuO(5);crystal

Calculation of EPR parameters g factors for Ce3+ ion in YBa2Cu3O6+x superconductor

International Journal of Modern Physics B

The perturbation formulae of EPR parameters g factors g(x), g(y) and g(z) for the lowest Kramers doublet of 4f(1) ion in orthorhombic symmetry are established. In these formulae, the contributions of the covalency effects, the admixture between J = 7/2 and J = 5/2 states as well as the second-order perturbation (which is not considered in the previous works) via crystal-field and orbital angular momentum interactions are all included. According to these formulae, and by using the superposition model, the g-factors g., g(y) and g(z) for Ce3+ center in YBa2CU3O6+x superconductor are calculated. The results are discussed.

关键词: YBa2Cu3O6+x;EPR;superposition model;Ce3+;crystal-field

Theoretical studies of the g-shift for Cr4+ ions in GaN crystal from crystal-field and charge-transfer mechanisms

Journal of Physics-Condensed Matter

The assignment of the 1.193 eV zero-phonon line of the 3d(2) ion in GaN crystal to the internal luminescence of Cr4+ on the Ga3+ site is analysed. Based on this assignment, the g-shift Ag (=g - g(s)) of the groundstate of this luminescence is calculated by considering not only the conventional contribution due to the crystal-field mechanism, but also the contribution due to charge-transfer mechanism. The calculated result shows good agreement with the observed value, suggesting that the assignment is reasonable. The calculated Ag due to the charge-transfer mechanism is opposite in sign and 62% in magnitude, compared with that due to the crystal-field mechanism, and so it cannot be neglected. It appears that for the 3d(2) (or 3d(n)) ion with a high valence state in crystals (particularly, in the case of the ligand having small optical electronegativity), the reasonable explanation of the g-shift should consider the contributions from both the crystal-field and charge-transfer mechanisms.

关键词: transition-metal impurities;paramagnetic-resonance;epitaxial layers;identification;luminescence;nitride;defects;gaas

DAMPING BEHAVIOR OF ULTRAFINE-GRAINED PURE ALUMINUM L2 AND THE DAMPING MECHANISM

Z.M. Zhang , * , C.J. Xu , J.C. Wang

金属学报(英文版)

Ultrafine-grained pure aluminum L2 with a mean grain size of 1.0μm was produced by equal channel angular pressing (ECAP) and annealing at 150℃ for 2h. Damping behavior of the alloy was measured using a dynamic mechanical thermal analyzer. The alloy had an excellent damping capacity Q-1 with the ambient value being 9.8×l0-3 at 1.0Hz when the strain amplitude was 2.0×l0-5. The damping behavior of the alloy showed a non-linear damping variation tendency, that is, with an increase in temperature and a decrease of frequency, the damping capacity of the alloy increased. The damping capacity increased with the strain amplitude when the strain amplitude was less than 4.6×l0-5. When the strain amplitude was higher than 4.6×10-5, the damping capacity became a constant and independent of strain amplitude. The high damping capacity was attributed to dislocation unpinning and a drag of dislocation on pinning points.

关键词: ECAP , 超细晶 , 阻尼 , 铝合金

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