Guangli LUO
,
Xiaofeng LIN
,
Peiyi CHEN
,
Peixin TSIAN
材料科学技术（英文）
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550 degrees C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.
关键词:
杨立新
,
巴黎明
,
李星
工程热物理学报
本文应用MUSIG模型[1]和均一直径模型对某溶液堆台架模型堆芯内气液流动传热进行了数值模拟.在MUSIG模型中堆芯内离散相气泡被分为5组不同直径的气泡,用于分析堆芯内气泡的流动变化和大小分布,采用Luo and Svendsen[2]和Prince and Blanch[3]模型描述不同直径气泡组间的破裂和聚合.在均一直径模型中,堆芯内的气体被考虑为同一直径的组分,并且不考虑其破裂与聚合现象.计算得到采用两个模型的模拟结果并且对其进行了对比研究.结果显示应用MUSIG模型的计算结果与台架实验结果吻合更好.
关键词:
MUSIG
,
均一直径
,
两相流
,
溶液堆
