欢迎登录材料期刊网

材料期刊网

高级检索

  • 论文(37842)
  • 图书()
  • 专利()
  • 新闻()

多晶硅薄膜的表面处理工艺

曾祥斌 , 徐重阳 , 饶瑞 , JOHNNY K O Sin

无机材料学报 doi:10.3321/j.issn:1000-324X.2001.04.020

采用NH3和N2O的等离子体分别对p-Si(多晶硅)薄膜表面进行了钝化处理,处理后的p-Si TFT(薄膜晶体管)具有比未处理TFT更优越的性能,通电试验与热应力试验后,处理后的器件呈现出更好的承受电负荷和热应力能力,钝化的微观机理是NH3和N2O等离子体中和了p-Si薄膜的悬挂键,形成牢固的Si-N键,减少了表面态密度.

关键词: NH3 , N2O , 表面钝化 , p-Si TFT

多晶硅太阳电池用SiN薄膜的研究进展

王晓泉 , 杨德仁 , 席珍强

材料导报

SiN薄膜因为具有良好的减反射性质和钝化作用,已经越来越广泛地应用于多晶硅太阳电池的制造工艺中.介绍了SiN薄膜在硅太阳电池中的性质,制备方法等研究现状,同时提出了存在的问题并展望了今后的发展趋势.

关键词: SiN , 多晶硅 , PECVD , 太阳电池

Phase relations in the ZnO-V(2)O(5)-K(2)O system

Chinese Physics B

The subsolidus phase relations of a ZnO-V(2)O(5)-K(2)O system are investigated by X-ray powder diffraction. There is 1 ternary compound, 11 binary compounds and 14 three-phase regions in this system. The phase diagrams of V(2)O(5)-K(2)O with the K(2)O content ranging from 0 to 71 mol% and pseudo-binary system of ZnO-K(2)ZnV(2)O(7) are also studied by X-ray powder diffraction and differential thermal analysis methods.

关键词: ZnO-V(2)O(5)-K(2)O system;ZnO-K(2)ZnV(2)O(7) system;V(2)O(5)-K(2)O;system;X-ray diffraction;crystal-structure;magnetic-properties;v2o5-zno system;potassium;trivanadates;diffraction;refinement;diagram;oxides;znv2o6

HRXRD研究SiN盖帽层在Si中引入的应变

杨洪东 , 于奇 , 王向展 , 李竞春 , 罗谦 , 姬洪

材料导报

为了研究SiN盖帽层在Si中引入应变的机理与控制,利用高分辨X射线衍射(HRXRD)技术分析了si中应变的各向异性以及与盖帽层厚度的关系.研究发现,盖帽层厚度低于300nm时,应变量与厚度呈近线性关系,随后增加趋缓,最终达到一饱和值;同时,应变在不同晶向表现出明显的各向异性,表层应变Si与未应变Si衬底在(004)晶面上的衍射峰重叠在一起,而(111)晶面的2个衍射峰可明显地被分离,且倾角对Si衬底衍射峰半高宽具有明显的展宽.

关键词: 氮化硅 , 应变测量 , 高分辨X射线衍射 , 应变硅

AZ31镁合金表面磁控溅射Zr(Al,Ti)-SiN_x复合薄膜及其耐蚀性能

黄佳木 , 罗先盛 , 邹阳 , 孟曦

材料保护

镁合金表面沉积薄膜可以提高其耐蚀性,但现有的几种沉积方法得到的膜疏松、与基体结合力差,影响了其耐腐蚀性能.为此,采用磁控溅射法在AZ31镁合金表面制备了Al,Zr,Ti膜及其与SiN_x的复合薄膜.用扫描电镜、X射线衍射、XPS研究了金属膜及其与SiNi_x复合薄膜的晶体结构、表面形貌和化学成分.结果表明:所制备的SiN_x薄膜为非晶态的富N膜;Zr膜的耐腐蚀性最好,Al膜的保护性最差;Zr-SiN_x复合薄膜比AZ31镁合金的腐蚀电流密度降低了3个数量级,Ti-SiN_x复合薄膜在阳极极化区出现了钝化.SiN_x复合薄膜的耐腐蚀性优于AZ31镁合金和单一金属膜.

关键词: 磁控溅射 , 金属膜 , 复合薄膜 , 镁合金 , 腐蚀

Ta-O的Snoek-Kster弛豫

李广义 , 潘正良 , 张进修

金属学报

用低频扭摆测量了掺氧的超纯Ta的Snoek-Kstcr弛豫.观察到了四种不同类型的S-K弛豫过程.在氧含量较低因而位错具有非饱和的填隙原子气团的条件下出现“SK-1”和“SK-2”弛豫.在氧含量较高的饱和气团条件下出现“SK-4”弛豫,而“SK-5”也属于非饱和气团的条件.本文还观测到随退火温度的提高和氧含量的增加,出现SK-5弛豫的试样有逐渐向sK-4弛豫过渡的趋势.除了SK-1弛豫对退火较不稳定以外,其它弛豫过程均较为稳定.比较了前人的测量结果与本文的实验数据.表明文献报道的Ta的S-K弛豫分别属于本文的不同类型的S-K弛豫.

关键词:

How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?

Physica E-Low-Dimensional Systems & Nanostructures

The effect of a SiO(2) nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiN(x) films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO(2) layer is 5-10 nm thick at 800 degrees C annealing temperature and only 2 nm at 1000 degrees C. A composition-structure-property analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the Si-0 and Si-N bonds in the SiN(x), films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. (C) 2010 Elsevier B.V. All rights reserved.

关键词: SiNx film;SiO(2);Annealing;Photoluminescence;silicon oxynitride;si0.7ge0.3 layers;defect spectrum;nanostructures;luminescence;morphology;devices;origin;growth

Electrical Relaxation in Mixed Alkali Bi2O3-K2O-Li2O-Fe2O3 Glasses

E.E.Shaisha , Sh.F.El-Desouki , I.Shaltout , A.A.Bahgat

材料科学技术(英文)

A new glass system (Bi2O3)50(Fe2O3)10(Li2O)x(K2O)40-x, where x changes in steps of 5 mole fraction between 0 and 40, was selected to study the electrical relaxation and the mixed alkali effect (MAE) phenomena. Measurements of ac conductivity σac, dielectric permittivity ε' and loss factor tan± in the frequency range of 0.12~102 kHz and in the temperature range of 300~650 K were carried out. The temperature dependence of the ac conductivity shows a slow increasing rate at low temperature and high frequency and a rapid increase at high temperature and low frequency. At constant temperature, the ac conductivity is found to be proportional to ωs, where s is the frequency exponent, which is less than 1. Analysis of the conductivity data and the frequency exponent shows that the overlapping large polaron tunnelling (OLPT) model of ions is the most favorable mechanism for the ac conduction in the present glass system. The ac response, the dc conductivity and dielectric relaxation have the same activation energy and they originate from the same basic transport mechanism. The results of the dielectric permittivity show no maximum peak in the temperature and frequency range studied. This absence of maximum peak is an indication of non-ferroelectric behavior of all the studied samples. The MAE has been detected in the ac conductivity, which is the same as the classical MAE in the dc conductivity. The electrical parameters such as dielectric permittivity ε' and real dielectric modulus M' show a typical minimum deviation from linearity by about two orders of magnitude. The loss factor tanδ and the imaginary dielectric modulus M" are insignificantly dependent on composition even at the same transition temperature Tg.

关键词: Dielectric permittivity , null , null , null

Thermoelectric Characterization of (Na1-yMy)1.6Co2O4 (M=K, Ca, Sr)

Ying LI

材料科学技术(英文)

Oxide materials NaCo2O4 and (Na1-yMy)1.6Co2O4 (M=K, 0.05≤y≤0.35; M=Ca, Sr, 0.10≤y≤0.40) were prepared by a sol-gel method. Experimental results indicated that the Seebeck coefficient and the Power-factor of Na Co2O4 were improved by doping Ca and Sr but not by K. The Power-factor of NaCo2O4 is in its maximum, 1.68×10-4 W•m-1•K-2 and 11% bigger than that of the original one when the dopant fraction of Ca was 0.1. Doping Sr makes NaCo2O4 have the biggest Power-factor, 1.68×10-4 W•m-1•K-2 that is 50% bigger than the non-doping oxide. The experimental results indicate that suitable dopants and addition amounts could improve the thermoelectric properties of NaCo2O4 greatly.

关键词: Thermoelectric materials , materials , Electric , proper

  • 首页
  • 上一页
  • 1
  • 2
  • 3
  • 4
  • 5
  • 下一页
  • 末页
  • 共3785页
  • 跳转 Go

出版年份

刊物分类

相关作者

相关热词