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THERMODYNAMIC PROPERTIES OF ALPHA-HELIX PROTEIN - A SOLITON APPROACH - COMMENT

Physical Review E

We disagree with the deduction of the equations of motion for the Davydov soliton and of the results in the paper by Jia-Xin Xiao et al. [Phys. Rev. A 44, 8375 (1991)]. The weakness and faults of the Davydov theory are also indicated.

关键词: davydov solitons;vibron solitons;molecules;excitation;system

第27卷B辑作者索引

金属学报

Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....

关键词:

ION HEATING PROCESS DURING PLASMA IMMERSION ION IMPLANTATION

X.B. Tian , X.F. Wang , A.G. Liu , L.P. Wang , S. Y. Wang , B. Y. Tang and P. K. Chu 1)Advanced Welding Production & Technology National Key Laboratory , Harbin Institute of Technology , Harbin 150001 , China 2)Department of Physics & Materials Science , City University of Hong Kong , China

金属学报(英文版)

The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.

关键词: plasma immersion ion implantation , null , null

介观LC电路在时变电源作用下量子态的演化

夏小建

量子电子学报 doi:10.3969/j.issn.1007-5461.2009.06.010

采用Wei-Norman方法,求出含时变电压源的介观LC电路随时间演化的精确解,应用相空间准概率分布函数,研究了时变电源作用下介观LC电路相干态的量子特性,结果表明此函数是一个二维运动的Gauss波包,其中心电量和磁通呈余弦和正弦变化.

关键词: 量子光学 , LC回路 , 介观电路 , 相干态 , 量子态演化 , 相空间的准概率分布函数

Intensified alkaline leaching pretreatment of refractory gold concentrates at common temperature and pressure

Transactions of Nonferrous Metals Society of China

A new process for the hydrometallurgy of refractory gold concentrates was presented. The process comprises grinding-leaching, intensified alkaline leaching (IAL), cyanidation and adsorption. In a stirring-type pulverizing-leaching tower mill, the concentrate is ground to <35. 6 μm of 95. 5 % while simultaneously leached by NaOH of 12 kg/t, then carried out intensified alkaline leaching for 48 h by NaOH of 108 kg/t in enhanced agitation tanks with the pulp concentration of 40% solids at the environmental temperature of 9. 5 &SIM; 13. 5 &DEG;C and the environmental pressure of 10(5) Pa. The oxidation rate of As is 94. 9%, and 47. 6% for S. The total consumption of NaOH is only 20% of that theoretically calculated under the conditions of full oxidation at the same oxidation rates of arsenic to arsenate and sulfur to sulfate. The gold leaching rate by NaCN in 24 h is increased from 9. 2% before pretreatment to 94. 2%. The consumption of NaCN is 7. 5 kg/t, which is one times less than that before pretreatment. The extraction cost of gold is about 422 Yuan/t.

关键词: refractory gold concentrates;grinding-leaching;intensified alkaline;leaching (IAL);pretreatment;common temperature and pressure

Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films

Materials Research Bulletin

Through analysis of the latest experimental results reported in the literature and obtained in our laboratory, we have extended our previous quantum confinement/luminescence center model for the photoluminescence mechanism of porous Si and of nanometer-silicon-particle-embedded Si oxide films (G.G. Qin and Y.Q. Jia, Solid State Commun. 86, 559 (1993)). We consider that there are three main types of competitive photoexcitation/photoemission processes and that the process in which photoexcitation occurs in the nanometer silicon particles (NSPs) while photoemission occurs in the luminescence centers (LCs) in the SiOx layers very close to the NSPs is usually the major one. We discuss under what conditions the other two types of processes will dominate. We believe that the extended quantum confinement/luminescence center model is a physical model that is suitable for the photoluminescence from silicon oxide films embedded with NSPs or nanometer Ge particles (NGPs), as well as from oxidized porous Si. (C) 1999 Elsevier Science Ltd.

关键词: oxides;luminescence;defects;blue-light emission;visible luminescence;optical-properties;nanocrystals;mechanism;dependence;sio2-films;absorption;spectra;defects

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