Peilin LI
,
Zhongfeng XU
,
Chun YU
,
Hao LU
,
Junshan YAO
,
Guoyu CHEN
金属学报(英文版)
The 2219 aluminum alloy under refilling friction stir welding (RF-FSW) was investigated. The micrographs showed that the bead could be divided into six zones, and the grain size and shape were greatly different in these zones. According to the microstructure analysis, the weld nugget zone and the shoulder stirring zone consisted of equiaxed grains, while the grains in the heat affected zone were seriously coarsened. It was obvious that bending deformation occurred in the thermo-mechanically affected zone. According to the microhardness analysis, the lowest hardness of the weld was at the thermo-mechanically affected zone, and the microhardness increased with the retraction of the stir-pin. The tensile strength and elongation of the bead were 70% and 80% of the base metal, respectively. The tensile strength was slightly different for the stable stage and the retraction stage, while the elongation decreased in the retraction stage. The mechanical properties and microstructure responded to different retraction speed were analyzed, and it showed that the elongation decreased with increasing retraction speed.
关键词:
Aluminium alloy
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null
,
null
,
null
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
