郑劼
,
朱霞萍
,
李品
,
白德奎
,
李铭
功能材料
doi:10.3969/j.issn.1001-9731.2016.09.045
共沉淀法制备了C u-Mg-A l层状超分子化合物,X 射线衍射图谱和热重分析表征了材料的结构,并研究了材料对溶液中碘离子的吸附去除性能.制备的材料为具有层状结构的 C u-Mg-A l 的超分子化合物,具有结构“记忆效应”,层间可以吸附碘,层板上的铜对碘也有特异化学作用,增强材料对碘的吸附能力.在优化制备和吸附条件下,Cu-Mg-Al层状超分子化合物对碘离子的饱和吸附量为279．15 mg/g,远高于普通层状氢氧化镁铝的66．61 mg/g.材料可作为碘及放射性碘污染的吸附去除剂.
关键词:
层状金属氢氧化物
,
超分子
,
铜
,
碘
,
去除
材料科学技术（英文）
A new type of long periodic structure has been found in ZrO2-Y2O3 ceramics in annealed states. High resolution electron microscopy (HREM), selected area electron diffraction, and computer simulation have been used to reveal the presence of the long periodic structure. The unit cell of the long periodic structure consists of a cubic ZrO2 unit cell and L1(0)- like phase one.
关键词:
ceramics;electron diffraction;electron microscopy;crystal structure;microstructure
Jiancun RAO
,
Yu ZHOU
,
Douxing LI
材料科学技术（英文）
A new type of long periodic structure has been found in ZrO2-Y2O3 ceramics in annealed states. High resolution electron microscopy (HREM), selected area electron diffraction, and computer simulation have been used to reveal the presence of the long periodic structure. The unit cell of the long periodic structure consists of a cubic ZrO2 unit cell and L10- like phase one.
关键词:
Ceramics
,
null
,
null
,
null
,
null
伏晓国
,
刘柯钊
,
汪小琳
,
柏朝茂
,
赵正平
,
蒋春丽
金属学报
采用X射线光电子能谱(XPS)分析研究了298 K时O2在金属U和U Nb合金清洁表面的原位吸附过程,作为对照还研究了在纯Nb表面的吸附.吸附各阶段XPS图谱的变化揭示了O2在U,Nb和U-Nb合金表面的吸附将导致UO2,NbO和Nb2O5等多种产物形成定量分析表明,O2在U和U-Nb合金表面的饱和吸附量大约分别为45 L和40 L(1 L=L33x10-4Pa.s),而O2在金属Nb上的饱和吸附量仅约为10 L.
关键词:
合金
,
null
,
null
伏晓国
,
刘柯钊
,
汪小琳
,
柏朝茂
,
赵正平
,
蒋春丽
金属学报
doi:10.3321/j.issn:0412-1961.2001.06.004
采用X射线光电子能谱(XPS)分析研究了298 K时O2在金属U和U Nb合金清洁表面的原位吸附过程,作为对照还研究了在纯Nb表面的吸附.吸附各阶段XPS图谱的变化揭示了O2在U,Nb和U-Nb合金表面的吸附将导致UO2,NbO和Nb2O5等多种产物形成定量分析表明,O2在U和U-Nb合金表面的饱和吸附量大约分别为45 L和40 L(1 L=L33x10-4Pa@s),而O2在金属Nb上的饱和吸附量仅约为10 L.
关键词:
O2
,
U
,
U-Nb合金
,
表面吸附
,
X射线光电子谱
Computer Physics Communications
Based on a detailed check of the LDA + U and GGA + U corrected methods, we found that the transition energy levels depend almost linearly on the effective U parameter. GGA + U seems to be better than LDA + U, with effective U parameter of about 5.0 eV. However, though the results between LDA and GGA are very different before correction, the corrected transition energy levels spread less than 0.3 eV. These more or less consistent results indicate the necessity and validity of LDA + U and GGA + U correction. (C) 2012 Elsevier B.V. All rights reserved.
关键词:
Band-gap problems;LDA plus U and GGA plus U;ZnO;First-principles;augmented-wave method
Physical Review B
Longitudinal electron transport is investigated for a long-period semiconductor superlattice in the presence of a magnetic field applied along the growth direction of the superlattice. It is shown that the longitudinal magnetoresistance exhibits a complicated dependence on the magnetic-field strength. In contrast with the conventional Shubnikov-de Haas oscillations, the magnetoresistance shows periodic oscillations only in the region of low reciprocal magnetic field.
关键词:
magnetoresistance
