刘文鹏
,
张庆礼
,
杨华军
,
周鹏宇
,
孙敦陆
,
高进云
,
谷长江
,
罗建乔
,
王迪
,
殷绍唐
量子电子学报
doi:10.3969/j.issn.1007-5461.2011.02.018
采用固相反应法制备了Bi3+、Eu3+、Tb3+掺杂的Lu3TaO7.测量了样品的X射线衍射谱、激发和发射光谱及荧光衰减曲线.三种离子掺杂的Lu3TaO7均呈现出强的荧光发射,其中Bi3+具有峰位在431 nm处的一强发射宽带,衰减寿命为16.8μs,Eu3+、Tb3+则表现出稀土离子的特征锐发射峰,衰减寿命分别为1.26 ms和1.20 ms.因此,它们均是具有潜在应用前景的重闪烁体材料.
关键词:
材料
,
闪烁体
,
Lu3TaO7
,
发光
Acta Materialia
A graded microstructure was produced in the surface layer of a pure Cu sample by means of surface mechanical attrition treatment (SMAT) [Wang K, Tao NR, Liu G, Lu J, Lu K. Acta Mater 2006;54:5281.]. The diffusion behavior of (63)Ni in such a surface layer was investigated by the radiotracer technique at temperatures <438 K. It is shown that the effective diffusivity in the top 10 mu m surface layer is more than 2 orders of magnitude higher than that along conventional high-angle grain boundaries (HAGB) in Cu of similar purity. The diffusion rate increases gradually with increasing depth up to 30-50 mu m, and then decreases with further increasing depth. The enhanced diffusivities reveal higher-energy states of various interfaces in the SMAT surface layer. The excess free energy of HAGB in this layer is estimated to be similar to 30% higher than that of conventional grain boundaries. An apparent retardation of the effective diffusion rate in the top 25 mu m surface layer is induced by tracer leakage into numerous twin-boundary-like interfaces, while the gradual decrease in interface excess free energy correlates with the observed decrease in diffusivity in the subsurface layer at depths exceeding 50 mu m. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词:
Nanostructured material;Surface mechanical attrition treatment;Diffusion;Grain boundaries;Twin boundaries;grain-boundary diffusion;mechanical attrition treatment;severe;plastic-deformation;nanocrystalline copper;self-diffusion;nickel;alloys;bulk;temperatures;segregation
季振国
,
周荣福
,
毛启楠
,
霍丽娟
,
曹虹
无机材料学报
doi:10.3724/SP.J.1077.2009.09217
利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果,当Sn/Sb 原子比处于0.22~0.33范围内时,TAO薄膜是p型导电的,在此范围之外,TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(～3.9eV).构造了一个全透明的PN结,其中n区为Sn/Sb原子比为0.5的TAO薄膜, p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物(ITO),p区TAO的电极用Cu薄膜.实验结果表明,由于两种导电类型的TAO薄膜具有相同的禁带宽度,上述透明PN结构具有典型的准同质PN结的整流特性.
关键词:
透明半导体薄膜
,
锡锑氧化物
,
PN结
Journal of Materials Research
The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.
关键词:
room-temperature
材料科学技术（英文）
The effect of interstitial hydrogen on the cohesion of the Al Sigma=11(113) grain boundary (GB) is investigated based on the thermodynamic model of Rice-Wang using the first-principles density function calculation. The results indicate that interstitial H behaves as an embrittler from "strengthening energy" analysis. The reduced GB cohesion due to the presence of H at the GB is attributed to the low affinity between H and Al, and the weakened bonding of Al atomic pairs perpendicular to GB plane.
关键词:
hydrogen;grain boundary;Al-Mg alloys;pseudopotentials;1st-principles
