材料期刊网

EFFECTS OF ATMOSPHERE AND TRACE ELEMENT ON THE WETTABILITY OF SOLID W BY LIQUID Ag

WU Shenqing ZHANG Deyuan Southeast University , Nanjing , China

金属学报(英文版)

The contact angle of liquid Ag with solid W and its temperature dependance were examined by sessile drop method under various atmospheres,e.g.vacuum,Ar,H_2 and carcked NH_3.The O_2 partial pressure in the atmosphere is found to be the major factor. An obvious improvement on the wettability may be made by a trace amount of Ni,Cu or Ce added to liquid Ag,The contact angle near M.P.is then narrowed from 69 to about 10—20 deg.

关键词: contact angle , null , null , null , null

小角度直线反走样的改进Wu算法

李铂 , 周建江 , 夏伟杰 , 吴连慧

液晶与显示 doi:10.3788/YJYXS20142904.0605

直线是机载座舱显示画面中最基本的图元,其显示质量对于整个画面的显示效果影响较大,尤其是小角度下直线显示的“麻花”现象一直是影响显示效果的关键问题之一.为了提高小角度下直线的显示效果,本文提出了一种基于Wu算法的亮度渐变改进算法.该算法通过渐进地展现直线从轴方向上的亮度变化过程,减少亮度畸变,有效地改进了显示效果.通过Matlab仿真和FPGA实现,验证了该算法反走样后的小角度直线显示效果明显优于其他算法,而且结合中点画线法后,绘制时间与Wu算法相当.同时该算法还可改善大角度直线和圆弧的显示效果,消除了大角度直线的边缘锯齿,解决了圆弧在小角度部分的虚化问题.因此本文算法可用于对实时性和显示效果要求高的机载座舱显示系统,以缓解飞行员的视觉疲劳.

关键词: 座舱显示 , 反走样 , 改进Wu算法 , 小角度 , FPGA实现

基于Wu反走样的三角形光栅化边缘反走样算法

吴连慧 , 周建江 , 夏伟杰 , 陈雅雯

液晶与显示 doi:10.3788/YJYXS20153001.0163

对于光栅化的三角形,其边缘存在明显的锯齿现象,因此需要进行反走样处理.基于Wu直线反走样算法的思想,考虑了水平直线外侧直接添加插值点的算法和三角形三边外侧反走样的算法.综合两者的优点,在绘制光栅化的三角形的同时,边缘叠加Wu反走样直线,并考虑背景像素灰度值的作用.结果表明,改进的三角形光栅化的边缘反走样算法有效提高了三角形光栅化后边缘的显示效果,该算法计算量小,便于FPGA实现,可用于对图形显示质量要求很高的机载显示系统.

关键词: 反走样 , Wu算法 , 光栅化 , FPGA

Jian ZHANG/Langhong Lou

材料科学技术（英文）

关键词:

碳酸钙粒子增韧高密度聚乙烯的脆韧转变——Wu氏增韧理论聚合物共混物脆韧转变判据的适用条件

胡跃鑫 , 冯玉林 , 姜伟

应用化学 doi:10.3724/SP.J.1095.2011.00521

采用不同尺寸的碳酸钙粒子增韧高密度聚乙烯,研究了不同温度下共混体系的临界粒子间距与碳酸钙粒子尺寸和含量之间的关系,确定了温度是Wu氏增韧理论临界粒子间判据适用性的重要影响因素.结果表明,在17℃下,临界粒子间距与碳酸钙粒子的尺寸和含量无关,该条件下Wu氏增韧理论临界粒子间距判据是适用的;而随着温度的升高,发现临界粒子间距依赖于碳酸钙粒子的尺寸,表明高温条件下,Wu氏增韧理论临界粒子间距判据不再适用.

关键词: 聚合物增韧 , 粒子间距 , 脆韧转变

University of Science and Technology Beijing

JIA Shizhen University of Science and Technology Beijing , China.

材料科学技术（英文）

关键词:

Department of Metallurgy and Materials Engineering of Chongqing University

YAN Guangting Chongqing University , Sichuan , China.

材料科学技术（英文）

关键词:

Institute of Materials Science at Jilin University——A Brief Overview

WANG Yuming Institute of Materials Science , Jilin University , Changchun , 130023 , China

材料科学技术（英文）

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Response to the Comment on 'Conjectures on exact solution of three-dimensional (3D) simple orthorhombic Ising lattices'

Philosophical Magazine

The error of Equation (15b) in my article [Z.D. Zhang, Phil. Mag. 87 (2007) p.5309] in the application of the Jordan-Wigner transformation does not affect the validity of the putative exact solution, since the solution is not derived directly from that equation. Other objections of Perk's comment [J.H.H. Perk, Phil. Mag. 89 (2009) p.761] are the same as those in Wu et al.'s comments [F.Y. Wu et al., Phil. Mag. 88 (2008) p.3093; p.3103], which do not stand on solid ground and which I have sought to refute in my previous response [Z.D. Zhang, Phil. Mag. 88 (2008) p.3097]. The conjectured solution can be utilized to understand critical phenomena in various systems, whereas the conjectures are open to rigorous proof.

关键词: 3D Ising model;exact solution;conjecture;critical phenomena;ferromagnetism;magnetic phase transition;model;analyticity

ATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS

金属学报(英文版)

粒裕希停桑谩。疲希遥茫拧。停桑茫遥希樱茫希校佟。希拢樱牛遥郑粒裕桑希巍。希啤。停粒牵危牛裕遥希巍。樱校眨裕裕牛遥牛摹。粒蹋眨停桑危眨停樱桑蹋桑茫希巍。粒蹋蹋希佟。疲桑蹋停?##2##3##4##5ATOMICFORCEMICROSCOPYOBSERVATIONOFMAGNETRONSPUTTEREDALUMINUM-SILICONALLOYFILMSJ.W.Wu,J.H.FangandZ.H.Lu(NationalLaboratoryofMoleculeandBiomoleculeElectronics,SoutheastUniversity,Nanjing210096,ChinaManuscriptreceived27October1995)Abstrcat:Twodifferentsurfacemorphologycharacteristicsofmagnetronsputteredaluminumsilicon(Al-Si)alloyfilmsdepositedat0and200℃wereobservedbyatomicforcemicroscopy(AFM).Oneisirregularlyshapedgrainsputtogtheronaplane.TheotherisirregularlyshapedgrainsPiledupinspace.Nanometer-sizedparticleswithheightsfrom1.6to2.9nmwerefirstobserved.Onthebasisoftheseobservationsthegrowthmechanismofmagnetronsputteredfilmsisdiscussed.Keywords:magnetronsputtering,Al-Sialloy,surfacemorphology,atomicforcemicroscopy,filmgrowthmechanism1.IntroductionTheuseofaluminumalloys[1,2],inparticularAl-Si,isacommonfeatureinmanysinglelevelandmultilevelinterconnectionschemesadoptedinthemanufactureofmicroelectronicdevicesbecauseofseveraldesirableproperties.TheAl-Sigrainmorphology(size.geometryanddistributionofgrainsisassociatedwithstepcoverage[3],electromigration[4]andinterconnectsresistivity[5]etc..Thus,characterizationofAl-Sialloysurfacemorphologyisveryimportant,especiallywhenintegratedintensityincreasesandlinewidthsof0.3to0.5μmbecomecommon.Inthepasttwentyyears,theAl-Sialloysurfacemorphologywhichaffectsthereliabilityofmicroelectronicdeviceshasbeenwidelyinvestigatedbyscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM)etc.[5-7].However,SEMandTEMhavetheirlimitationorinconvenience,forexample,theverticalresolutionofSEMisnothighandTEMneedscomplexsamplepreparation.Recently,anewgrainboundaryetchingmethodwasproposed￣[8]whichalsoneedstroublesomechemicaletching.Atomicforcemicroscopy(AFM),sinceitsemerging,hasbecomemoreandmoreusefulinphysics,chemistry,materialsscienceandsurfacescience,becauseofitshighresolution,easeofsamplepreparationandrealsurfacetopography.Recently,discussion[9,10]waspresentedonhowAFMwillplayaroleinsemiconductorindustry.Asaresponsetothisdiscussion,weusedAFMtoinvestigateAl-SialloysurfacemorphologyandhaveobtainedsomeresultswhichcannotberevealedbySEMorTEM.ThisindicatesthatAFMisagoodcharacterizationtoolinsemiconductorindustry.2.SamplePreparationInourexperiments,aluminumwith30ppmsiliconwassputteredonsiliconsubstrateinbatchdepositionmodeAllthreefilmswiththicknessof1.6μmweredepositedusinganargonsputteringpressureof4.2×10￣-3Pa.TheotherdepositionparametersaredescribedinTable1.Thesubstratewascleanedusingstandardpremetallizationcleaningtechniquespriortofilmdeposition.3.ExperimentalResultsandDiscussionTheAFMmeasurementswereperformedonacommercialsystem(NanoscopeIII,DigitalInstruments,SantaBarbara).Thetipismadeofmicrofabricatedsiliconnitride(Si_3N_4)Itisattachedtoa200μmcantileverwithaforceconstantofabout0.12N/m.Beforethesurfaceofsamplewasexamined.agoodtipwithananometer-sizedprotrusionatitsendwasselectedbeforehand,whichcanbeobtainedbyimagingtheatomicstructureofmicasubstrateandagoldgrid.AtypicaloperatingforcebetweenthetipandAl-Sisamplesurfaceisoftheorderof10￣-8Nandallimagesweretakenatroomtemperatureinair.AtypicaltopographicviewoftheAl-SifilmsisshowninFig.1(allimagescansizeis5by5μma,bandcarerespectivelyforsample1,2,and3).FromFig.la,itcanbeseenthatirregularlyshapedgrainstiltinginvaryingdegreespileupinspace,andgroovesamongtheirregularlyshapedgrainsaredifficulttodecideatacertainarea(wedefineitascharacteristicA).Toourknowledge,onreportsonthesurfacemorphologyhavebeenpresentedbefore.InFig1b,however,irregularlyshapedgrainsassembleonaPlaneandgroovesamongtheirregularlyshapedgrainsareeasytodecide(wedefineitascharacteristicB),whichisinagreementwithmanypreviousreports[5-7].InFig.1c,bothcharacteristicA(arrowA)andcharacteristicB(arrowB)wereobserved.IndoingAFMexperiments,weselectedfivedifferentscanareastobeimagedforeachsampleandfoundthatallimagesofeachsamplearerespectivelysimilartoFig.1a,bandc.Also,wenotedthatthesurfaceofinFig.1a.WethinkthatdepositionparameterswillinfluenceAl-Sisurfacemorphology,andthetiltedgrainsmaybesusceptibletomicrocracking.Byreducingthescansizeareato2by2μm(Fig.2aandb).Weobtainedmanyidenticalresultsasdescribedabove,suchasirregularlyshapedgrainsetc.Forthefirsttime,wefoundnanometersizedparticlesonirregularlyshapedgrainsurfacewhichcannotberevealedbySEMbecausethediameterofthesenanoparticlesisabout10nmandtheheightofthesenanoparticlesisintherangeof1.6to2.9nm.Inimaging,wenotedthatrotatingthescandirectionandchangingthescanfrequencydidnotaffectthestructureofthesegrainsasshowninFig.2aandb,rulingoutthepossibilitythatscanninginfluencedtheshapeoftheseparticlesorcausedsomesimilarimagingartifacts.Also,wenotedthatthenanoparticleswerenotobservedontheslopesofthegrooves(Fig.2aandb).Thisphenomenoncanbeexplainedasfollows:thepotentialenergyattheslopeislargerthanthatelsewhere,sotheparticlesseemmorelikelytobedepositedontheseareaswithlowerpotentialenergy.Fig.2c,scansize250by250nm,isazoomtopographicimage(whiteoutlineinb).Itshowsunevendistributionofthenanoparticles.Andtheheightdifferenceofthenanoparticlesindicatesdifferentgrowingspeed.Wethinkbasedonthemorphologyofnanoparticles,thattheheightdifferenceandunevendistributionofthesenanoparticlesshowdifferentgrowingadvantageandindicatethatatomshaveenoughenergytomovetoasuitablegrowingspot.Theenergymaybefromthefollowingsources:surfacetemperaturefluctuation,stressdifferenceorcollisionbetweenhighspeedsputteredatoms.Thesenanoparticlesgoongrowingandformmanyirregularlyshapedgrains.AndtheseirregularlyshapedgrainsfurtherconnecteachotheraccordingtocharacteristicAorB,finallyformingtheAl-Sisurfacemorphology.4.ConclusionWecandrawthefollowingconclusionsfromtheabove.First,theexperimentalresultsshowedthatAFMisapowerfultooltoinvestigatethedetailsofAl-Sisurfacemorphologywhichcangreatlyenrichourknowledgeofthefilmgrowthmechanism.Second,depositionconditionsplayanimportantroleindeterminingtheAl-Sisurfacemorphology.Third,thetwoAl-Sisurfacemorphologycharacteristicsarethatirregularlyshapedgrainsassembleonaplaneandirregularlyshapedgrainstiltinginvaryingdegreespileupinspace.Fourth,forthefirsttime,nanoparticleswereobservedonirregularlyshapedgrainsurfacewhichsuggestedthatthefilmgrowthmechanismwasbyinhomogeneousnucleation.Acknowledgements-BeneficialdiscussionswereheldwithDr.ZhenandMr.Zhu.ThisworkwaspartiallysupportedbytheNationalNaturalScienceFoundationofChina.RFFERENCES｜｜1D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##61D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##A##BATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS$$$$J.W.Wu,J.H. Fang and Z.H.Lu (National Laboratory of Molecule and Biomolecule Electronics,Southeast University,Nanjing 210096, China Manuscript received 27 October 1995)Abstrcat:Two different surface morphology characteristics of magnetron sputtered aluminumsilicon(Al-Si)alloy films deposited at 0 and 200℃ were observed by atomic force microscopy(AFM).One is irregularly shaped grains put togther on a plane.The other is irregularly shaped grains Piled up in space. Nanometer-sized particles with heights from 1.6 to 2.9 nm were first observed. On the basis of these observations the growth mechanism of magnetron sputtered films is discussed.

关键词: :magnetron sputtering , null , null , null , null