Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
李玉伟
,
陈继红
,
唐东明
,
张豹山
,
鹿牧
,
陆怀先
功能材料与器件学报
doi:10.3969/j.issn.1007-4252.2010.02.011
制备了一系列具有铁磁/反铁磁交换偏置作用的[NiO/Fe65Co35]10多层膜,使用振动样品磁强计(VSM)测量了样品的静磁参数,利用微带线法测量了样品4GHz-10GHz的磁谱,首次制备并测得了自然共振频率(fr)在6GHz以上,最高到f=9.6GHz的薄膜样品.结果表明交换偏置场(Hex)、各向异性场(Hua)、以及矫顽力(Hc)随铁磁层厚度(tFM)增大而减小;基于Landau-Lifishitz (L-L)方程对静磁参量和磁谱进行了比较,发现样品自然共振频率较L-L方程计算值偏大30%以上.
关键词:
铁磁
,
反铁磁
,
交换偏置场
,
各向异性场
,
交换耦合能密度
,
自然共振频率
徐菊良
,
邓博
,
孙涛
,
李劲
,
蒋益明
金属学报
doi:10.3724/SP.J.1037.2009.00598
利用Thermo-Calc软件并结合金相显微镜,定性研究了2205双相不锈钢在800℃下敏化不同时间后的微观组织演变过程.通过研究扫描速率、介质成分、介质温度和试样表面状态优化了双环电化学动电位再活化法(DL-EPR),并用该优化方法研究了2205双相不锈钢晶间腐蚀敏感性.结果表明:DL-EPR法能定量评价σ相对2205双相不锈钢晶间腐蚀敏感性的影响,随敏化时间延长,σ相含量增多,晶jian 腐蚀敏感性也随之增加.腐蚀形貌的观测验证了这一规律,
关键词:
2205双相不锈钢
,
DL-EPR
,
晶间腐蚀敏感性
,
σ相
