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Magnetic Property of a Spin-5/2 Trigonal Prismatic as a Model for a Molecule-based Compound Cs4Na7[Fe6(OH)3(A-a-GeW9O34(OH)3)2]?30H2O

LI Zongbao , YAO Kailun

武汉理工大学学报-材料科学版(英文版) doi:10.1007/s11595-015-1242-2

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Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

Applied Physics a-Materials Science & Processing

Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural ...

关键词: hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2

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