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Zhang Xu , Rao Feng , Liu Bo , Peng Cheng , Zhou Xilin , Yao Dongning , Guo Xiaohui , Song Sannian , Wang Liangyong , Cheng Yan , Wu Liangcai , Song Zhitang , Feng Songlin

半导体学报（英文版） doi:10.1088/1674-4926/33/10/102003

关键词:

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

Applied Physics a-Materials Science & Processing

Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural ...

关键词: hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2